Tuesday, May 29 Wednesday, May 30 Thursday, May 31 Friday, June 1
8:30 ‑ 8:45 am   We1A1: Narrow Band Gap (Quantum)
We1B1: Wide Band Gap (AlGaN)
We1C1: RF (III-V)
We1D1: Power(Bulk GaN)
Th1A5: Lasers
Th1B5: Wide Band Gap
Th1C5: Novel Materials & Devices
Th1D5: RF (Power)
  Fr15PP-No: Poster Session - Novel metarials and device physics
Fr15PP-NS: Poster Session - Nanostructures
Fr15PP-Opt: Poster Session - Optoelectronics
Fr1PP-Ga: Poster Session - Ga2O3
8:45 ‑ 10:00 am Tu1SC1: Short Course I: Materials and Devices for Neuromorphic Applications  
10:00 ‑ 10:15 am TuCB1: Coffee Break WeCB1: Coffee Break ThCB1: Coffee Break   FrCB1: Coffee Break
10:15 ‑ 10:30 am Tu1SC2: Short Course II: Materials and Devices for Neuromorphic Applications  
10:30 am ‑ 12:30 pm We2A2: Lasers
We2B2: Wide Band Gap (GaN on Si)
We2C2: RF (Resonat Tunneling Diodes)
We2D2: Power (GaN)
Th2A6: Lasers
Th2B6: Wide Band Gap (Nanostructures)
Th2C6: Novel Materials & Devices
Th2D6: Wide Band Gap (Ga2O3)
  Fr2A7: Photonics
Fr2B7: Nanostructures
Fr2F1: Ga2O3 Keynotes
12:30 ‑ 1:00 pm TuLB: Lunch Break WeLB: Lunch Break ThLB: Lunch Break   FrLB: Lunch Break
1:00 ‑ 1:30 pm Th3: Excursion to Downtown Boston
1:30 ‑ 3:00 pm Tu1JP1: Joint Plenary I We3A3: Narrow Band Gap
We3B3: Wide Band Gap
We3C3: RF (Narrow Band Gap)
We3D3: Power (GaN)
  Fr3A8: Photonics
Fr3B8: Nanostructures
Fr3C7: Novel Materials & Characterization
Fr3F2: Ga2O3 Growth and Characterization
3:00 ‑ 3:15 pm WeCB2: Coffee Break   FrCB2: Coffee Break
3:15 ‑ 3:30 pm TuCB2: Coffee Break  
3:30 ‑ 3:45 pm We4A4: Lasers
We4B4: Wide Band Gap
We4C4: Organic Semiconductors
We4D4: Novel Materials (2D Materials)
  Fr3A9: Photonics
Fr3B9: Nanostructures
Fr3C8: Novel Materials & Devices
Fr3F3: Ga2O3 Characterization & Devices
3:45 ‑ 4:45 pm Tu2JP2: Joint Plenary II  
4:45 ‑ 5:00 pm    
5:00 ‑ 5:15 pm We5PP-L: Poster Session - Lasers
We5PP-O: Poster Session - Organic and Novel Semiconductors
We5PP-Po: Poster Session - Power Devices
We5PP-RF: Poster Session - RF Devices
We5PP-WBG: Poster Session - Wide Band Gap
 
5:15 ‑ 5:45 pm Tu3AC: Award Ceremony  
5:45 ‑ 6:15 pm     F4CC: Closing Ceremony
6:15 ‑ 6:30 pm      
6:30 ‑ 7:00 pm Tu4WR: Welcome reception      
7:00 ‑ 8:30 pm We6RS: Rump Session: Industrial III-V's: continuing the single life or more fulfillment through marriage with silicon? Th4: Conference Banquet    

Tuesday, May 29

Tuesday, May 29 8:45 - 10:00

Tu1SC1: Short Course I: Materials and Devices for Neuromorphic Applications

Room: DR 5&6
Chair: Jeehwan Kim (MIT, USA)
8:45 Introduction
Jeehwan Kim (MIT, USA)
9:00 Neuromorphic Computing with Memristive Devices and Arrays
Joshua Yang (University of Massachusetts, USA)

Tuesday, May 29 10:00 - 10:15

TuCB1: Coffee Break

Tuesday, May 29 10:15 - 12:30

Tu1SC2: Short Course II: Materials and Devices for Neuromorphic Applications

Room: DR 5&6
Chair: Jeehwan Kim (MIT, USA)
10:15 Materials for Neuromorphic Computing
Ilia Valov (Research Centre Jülich, Germany)
11:15 Coffee Break
11:30 Analog Arrays and Algorithms
Wilfried Haensch (IBM Thomas J. Watson Research Center, USA)

Tuesday, May 29 12:30 - 1:30

TuLB: Lunch Break

Short Course attendees only

Tuesday, May 29 1:30 - 3:15

Tu1JP1: Joint Plenary I

Room: Morss Hall(50-140)
Chairs: Tomas Palacios (Massachusetts Institute of Technology, USA), Huili Xing (Cornell University, USA)
1:30 Welcome Remarks
Tomas Palacios (Massachusetts Institute of Technology, USA); Huili Xing (Cornell University, USA)
1:45 Sputtering Epitaxial Growth of III Nitrides and Its Device Applications
Hiroshi Fujioka (The University of Tokyo, Japan)
2:30 Semiconductors at the Frontiers of Quantum Technologies
Evelyn Hu (Harvard University, USA)

Tuesday, May 29 3:15 - 3:45

TuCB2: Coffee Break

Tuesday, May 29 3:45 - 5:15

Tu2JP2: Joint Plenary II

Room: Morss Hall(50-140)
Chair: Huili Xing (Cornell University, USA)
3:45 The Physics of AI and Quantum Computing
Dario Gil (IBM, USA)
4:30 Transistors: mm-Wave and Low-Power VLSI
Mark J W Rodwell (University of California, Santa Barbara, USA)

Tuesday, May 29 5:15 - 5:45

Tu3AC: Award Ceremony

Room: Morss Hall(50-140)

Tuesday, May 29 6:30 - 8:30

Tu4WR: Welcome reception

Room: MIT Museum

Wednesday, May 30

Wednesday, May 30 8:30 - 10:00

We1A1: Narrow Band Gap (Quantum)

Room: Salon M
Chair: Amy W. K. Liu (IQE Inc., USA)
8:30 [Invited] Heterostructures of Narrow-Gap Semiconductor and Superconductors for Quantum Information Applications
Javad Shabani (NYU, USA)
9:00 InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range
Eva Repiso (Lancaster University, United Kingdom (Great Britain)); Chris Broderick (Tyndall National Institute, Ireland); Maria de la Mata (Cadiz University, Spain); Reza Arkani (Tyndall National Institute, Ireland); Qi Lu and Andrew R J Marshall (Lancaster University, United Kingdom (Great Britain)); Sergio Molina (Cadiz University, Spain); Eoin O'Reilly (Tyndall Institute, Ireland); Peter Carrington and Anthony Krier (Lancaster University, United Kingdom (Great Britain))
9:15 Analysis of Composition Profiles and Strain Across Heterovalent Non-Common-Atom CdTe/InSb Interfaces
Esperanza Luna (Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin, Germany)
9:30 [Invited] RS-PbTe/ZB-CdTe (111) Heterostructure an Inter-Diffusion Free Interface with a High Mobility Two-Dimensional Electron Gas (2DEG) Showing Quantum Oscillations
Yong Zhang (The University of North Carolina at Charlotte, USA)

We1B1: Wide Band Gap (AlGaN)

Room: DR 3&4
Chair: Qian Sun (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China)
8:30 Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy
Xianhe Liu (University of Michigan, Ann Arbor, USA & McGill University, Canada); Kishwar Mashooq, Jin Shin, David Laleyan and Ayush Pandey (University of Michigan, Ann Arbor, USA); Zetian Mi (University of Michigan, USA)
8:45 High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing
Akira Mishima, Yuji Tomita, Yuya Yamaoka, Yoshiki Yano, Toshiya Tabuchi and Koh Matsumoto (Taiyo Nippon Sanso Corporation, Japan); Mayank Bulsara (Matheson Tri-Gas & Taiyo Nippon Sanso, USA); Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)
9:00 [Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing
Kanako Shojiki, Xiaotong Liu and Shoya Kawai (Mie University, Japan); Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)
9:30 Extreme-high-temperature MOVPE Design and Practice for Nitrides
Kuang-Hui Li, Haiding Sun, Che-Hao Liao and Hsin-Hung Yao (KAUST, Saudi Arabia); William Holden, Tom Salagaj, Aaron Feldman, Gary Provost and Gary Tompa (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
9:45 Electrical and Optical Properties of Heavily Ge-Doped AlGaN
Rodrigo Blasco (Univesidad de Alcala, Spain); Akhil Ajay (CEA-Grenoble, France); Katharina Lorentz (IPFN, Portugal); Luís Manuel Cerqueira Lopes Alves (C2TN, Portugal); Eva Monroy (CEA-Grenoble, France)

We1C1: RF (III-V)

Room: Salon T
Chair: Eduardo Chumbes (Raytheon, USA)
8:30 [Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Masaru Sato, Yasuhiro Nakasha and Naoki Hara (Fujitsu Laboratories Ltd., Japan)
9:00 Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology
Dimitri Stoppel, Michael Hrobak, Alexander Külberg, Saskia Schönfeld, Dirk Rentner, Olaf Krüger, Ksenia Nosaeva, Mohamed Brahem and Sebastian Boppel (Ferdinand-Braun-Institut, Germany); Nils Weimann (University of Duisburg-Essen, Germany)
9:15 Fin-Width Scaling of Highly-Doped InGaAs Fins
Alon Vardi and Jesus del Alamo (MIT, USA)
9:30 Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process
Adam Jönsson, Johannes Svensson and Lars-Erik Wernersson (Lund University, Sweden)
9:45 Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width
Wenjie Lu and Jesus del Alamo (MIT, USA)

We1D1: Power(Bulk GaN)

Room: DR 5&6
Chair: Elison Matioli (EPFL, Switzerland)
8:30 GaN Junction Barrier Schottky Diodes by Selective Ion Implantation
Yuhao Zhang (Massachusetts Institute of Technology, USA); Zhihong Liu (Singapore-MIT Alliance for Research and Technology, Singapore); Marko Tadjer (Naval Research Laboratory, USA); Daniel Piedra (Massachusetts Institute of Technology, USA); Christopher Hatem (Applied Materials-Varian, USA); Xiang Gao (IQE LLC, USA); Travis Anderson, Lunet Luna, Andrew Koehler, Boris Feigelson and Karl Hobart (Naval Research Laboratory, USA); Tomas Palacios (Massachusetts Institute of Technology, USA)
8:45 MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates
Kazuki Nomoto (Cornell University, USA); Henryk Turski and Grzegorz Muziol (Institute of High Pressure Physics, PAS, Poland); Zongyang Hu and Shyam Bharadwaj (Cornell University, USA); Marcin Siekacz (Institute of High Pressure Physics, PAS, Poland); Czeslaw Skierbiszewski (Unipress, Poland); Debdeep Jena and Huili Xing (Cornell University, USA)
9:00 Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods
Shigeyoshi Usami (Nagoya University, Japan); Yoshihiro Sugawara, Yong-Zhao Yao and Yukari Ishikawa (Japan Fine Ceramics Center, Japan); Norihito Mayama and Kazuya Toda (Toshiba Nanoanalysis Corpotration, Japan); Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda and Hiroshi Amano (Nagoya University, Japan)
9:15 1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET
Chirag Gupta, Silvia H Chan and Anchal Agarwal (University of California Santa Barbara, USA); Nirupam Hatui, Stacia Keller and Umesh Mishra (UCSB, USA)
9:30 High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates
Jingshan Wang (University of Notre Dame & Micron Technology, USA); Lina Cao (University of Notre Dame, USA); Robert McCarthy (MicroLink Devices, USA); Chris Youtsey (MicroLink Devices, Inc., USA); Louis Guido (Virginia Tech, USA); Jinqiao Xie and Edward Beam (Qorvo, Inc., USA); Patrick Fay (University of Notre Dame, USA)
9:45 Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates
Lina Cao (University of Notre Dame, USA); Jingshan Wang (University of Notre Dame & Micron Technology, USA); Galen Harden, Anthony Hoffman and Patrick Fay (University of Notre Dame, USA)

Wednesday, May 30 10:00 - 10:30

WeCB1: Coffee Break

Wednesday, May 30 10:30 - 12:30

We2A2: Lasers

Room: Salon M
Chairs: Eric Tournié (Université de Montpellier, France), Marcelo Davanco (NIST, USA)
10:30 Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm
Jiaxing Wang and Jonas Kapraun (University of California Berkeley, USA); Neil Cabello and Philippe Tingzon (University of the Philippines Diliman, USA); Kevin Cook, Jipeng Qi, Emil Kolev and Connie J. Chang-Hasnain (University of California Berkeley, USA)
10:45 Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide
Takuma Aihara (NTT Device Technology Laboratories, Japan); Tatsurou Hiraki (NTT, Japan); Koji Takeda, Koichi Hasebe, Takuro Fujii and Tai Tsuchizawa (NTT Corporation, Japan); Takaaki Kakitsuka (Japan); Shinji Matsuo (NTT Corporation, Japan)
11:00 Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers
Heming Huang (Télécom ParisTech & Université Paris-Saclay, France); Jianan Duan (Télécom ParisTech, Université Paris-Saclay, France); Zhenguo Lu and Philip Poole (National Research Council Canada, Canada); Frédéric Grillot (Télécom Paristech, Université Paris-Saclay, France)
11:15 Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection
Xiangmeng LU and Yasuo Minami (Tokushima University, Japan); Naoto Kumagai (National Institute of Advanced Industrial Science and Technology, Japan); Ken Morita (Chiba University, Japan); Takahiro Kitada (Tokushima University, Japan)
11:30 [Invited] Quantum-Dot Lasers on Silicon
John E Bowers (University of California, USA)
12:00 Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants
Dongxia Wei, Patrick Sohr and Stephanie Law (University of Delaware, USA)
12:15 Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots
Masahiro Nomura (The University of Tokyo, Japan); Anthony George (The University of Tokyo); Ryoto Yanagisawa (The University of Tokyo, Japan); Sebastian Volz (CNRS, France)

We2B2: Wide Band Gap (GaN on Si)

Room: DR 3&4
Chair: Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)
10:30 High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application
Liyang Zhang, Kai Liu, Peng Xiang, Hongjing Huo, Ni Yin and Kai Cheng (Enkris Semiconductor, China)
10:45 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
Atsunori Tanaka, Woojin Choi, Renjie Chen and Shadi Dayeh (University of California, San Diego, USA)
11:00 [Invited] GaN-on-Si Laser Diodes and Normally-Off HEMTs
Qian Sun (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China)
11:30 Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs
Abdullah Alhassan and Cheyenne Lynsky (University of California, Santa Barbara, USA); Ahmed Y. Alyamani (King Abdulaziz City for Science and Technology, Saudi Arabia); Shuji Nakamura (University of California Santa Barbara, USA); Steven DenBaars (University of California, Santa Barbara)
11:45 Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN
Donghyun Lee, Jehong Oh, Seungmin Lee, Giwoong Kim, Jongmyeong Kim, Jeonghwan Jang and Daeyoung Moon (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
12:00 [Invited] Electrically-Injected GaN-based VCSELs
Tetsuya Takeuchi (Meijo University, Japan)

We2C2: RF (Resonat Tunneling Diodes)

Room: Salon T
Chair: Nils Weimann (University of Duisburg-Essen, Germany)
10:30 [Invited] Mm-wave/THz Multi-Gigabit Wireless Links and Microwave Interfaces - The iBROW Project
Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
11:00 Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures
Jimy Encomendero and Rusen Yan (Cornell University, USA); Amit Verma (Indian Institute of Technology Kanpur, India); SM Islam and Vladimir Protasenko (Cornell University, USA); Sergei Rouvimov and Patrick Fay (University of Notre Dame, USA); Debdeep Jena and Huili Xing (Cornell University, USA)
11:15 Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection
Khaled Arzi (University of Duisburg-Essen, Germany); Safumi Suzuki (Tokyo Institute of Technology, Japan); Daniel Erni and Nils Weimann (University of Duisburg-Essen, Germany); Masahiro Asada (Tokyo Institute of Technology, Japan); Werner Prost (University of Duisburg-Essen, Germany)
11:30 Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology
Maengkyu Kim (Korea Advanced Institute of Science and Technology, Korea (South)); Se-Mi Kim and Jae-Hyung Jang (Gwangju Institute of Science and Technology, Korea (South)); Kyounghoon Yang (KAIST, Korea (South))
11:45 Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region
Abdullah Al-Khalidi, Jue Wang, Khalid Alharbi and Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
12:00 Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes
Masanori Nagase, Tokio Takahashi and Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
12:15 A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs
Jen-Inn Chyi, Shan-Chun Hsu, Cheng-Han Tsou and Wei Jen Hsueh (National Central University, Taiwan); Szu Hung Chen (National Nano Device Laboratories, Taiwan)

We2D2: Power (GaN)

Room: DR 5&6
Chair: Rebecca L Peterson (University of Michigan, USA)
10:30 1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates
Houqiang Fu (Arizona state University, USA); Xuanqi Huang, Hong Chen, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
10:45 High Performance 820V GaN-on-Si PiN Diodes
Riyaz Mohammed Abdul Khadar (École Polytechnique Federale de Lausanne, Switzerland); Chao Liu (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Reza Soleimanzadeh (EPFL, Switzerland); Liyang Zhang, Peng Xiang and Kai Cheng (Enkris Semiconductor, China); Elison Matioli (EPFL, Switzerland)
11:00 2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture
Jun Ma and Elison Matioli (École polytechnique fédérale de Lausanne (EPFL), Switzerland)
11:15 Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si
Woojin Choi, Atsunori Tanaka, Renjie Chen and Shadi Dayeh (University of California, San Diego, USA)
11:30 N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias
Onur Koksaldi, Jeffrey Haller, Haoran Li, Nirupam Hatui and Brian Romanczyk (University of California Santa Barbara, USA); Matthew Guidry (University of California, Santa Barbara, USA); Steven Wienecke, Jr, Stacia Keller and Umesh Mishra (University of California Santa Barbara, USA)
11:45 Scaling of GaN HEMTs Thermal Transient Characteristics
Adrien Cutivet (UniversitÌé de Sherbrooke, Canada); Meriem Bouchilaoun (University of Sherbrooke, Canada); Bilal Hassan (UniversitÌé de Sherbrooke, Canada); Christophe Rodriguez (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); François Boone and Hassan Maher (Université de Sherbrooke, Canada)
12:00 [Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors
Michael J Uren and Martin Kuball (University of Bristol, United Kingdom (Great Britain))

Wednesday, May 30 12:30 - 1:30

WeLB: Lunch Break

Wednesday, May 30 1:30 - 3:00

We3A3: Narrow Band Gap

Room: Salon M
Chair: John E Bowers (University of California, USA)
1:30 [Invited] Sb-based IR Detector and Emitter Materials
Eric Tournié (University of Montpellier)
2:00 High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers
Bei Shi (The Hong Kong University of Science and Technology, Hong Kong); Qiang Li and Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:15 Substrate-transferred Crystalline Coatings
Garrett Cole (Crystalline Mirror Solutions LLC & Crystalline Mirror Solutions GmbH, USA); David Follman, Paula Heu and Gar-Wing Truong (Crystalline Mirror Solutions LLC, USA); Christoph Deutsch, Dominic Bachmann, Tobias Zederbauer and Ashish Rai (Crystalline Mirror Solutions GmbH, Austria); Mark White (Crystalline Mirror Solutions LLC, USA); Markus Aspelmeyer (Crystalline Mirror Solutions GmbH, Austria)
2:30 [Invited] High-quality Growth of Chalcogenide Topological Insulators
Stephanie Law (University of Delaware, USA)

We3B3: Wide Band Gap

Room: DR 3&4
Chair: Tetsuya Takeuchi (Meijo University, Japan)
1:30 Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate
Jongmyeong Kim, Daeyoung Moon and Duyoung Yang (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
1:45 Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs
Akshay Singh (Massachusetts Institute of Technology, USA); Zhibo Zhao (Massachusetts Institute of Technology`, USA); Silvija Gradecak (Massachusetts Institute of Technology, USA)
2:00 [Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers
Mary Crawford, Andrew Allerman, Andrew Armstrong, Robert Kaplar, Greg Pickrell, Jeramy Dickerson, Michael Smith and Karen Cross (Sandia National Laboratories, USA); Vincent Abate (Sandia National Laboratory, USA); Caleb Glaser and Michael Van Heukelom (Sandia National Laboratories, USA)
2:30 Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs
Shyam Bharadwaj (Cornell University, USA); Cheng Liu (Rochester Institute of Technology, USA); Craig Moe and James Grandusky (Crystal IS, Inc., USA); Akira Yoshikawa and Jumpei Kasai (Asahi Kasei Corporation, USA); SM Islam and Vladimir Protasenko (Cornell University, USA); Leo Schowalter (Crystal IS, Inc., USA); Jing Zhang (Rochester Institute of Technology, USA); Debdeep Jena and Huili Xing (Cornell University, USA)
2:45 Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films
Matthew Laurent (UC Davis, USA); Stacia Keller and Umesh Mishra (UCSB, USA); Srabanti Chowdhury (UC Davis & ASU, USA)

We3C3: RF (Narrow Band Gap)

Room: Salon T
Chair: Lars-Erik Wernersson (Lund University, Sweden)
1:30 [Invited] III-V CMOS: Quo Vadis?
Jesus del Alamo (MIT, USA)
2:00 Fabrication of InGaAs Nanosheet Transistors with Regrown Source
Toru Kanazawa, Kazuto Ohsawa, Tomohiro Amemiya, Nobukazu Kise, Ryosuke Aonuma and Yasuyuki Miyamoto (Tokyo Institute of Technology, Japan)
2:15 First Demonstration of InGaAs FinFETs on Si for RF Applications
Cezar Zota, Clarissa Convertino and Marilyne Sousa (IBM Research Zurich, Switzerland); Daniele Caimi (Zurich IBM Research Center, Switzerland); Lukas Czornomaz (IBM Research Zurich, Switzerland)
2:30 Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications
Fredrik Lindelöw, Lasse Södergren and Erik Lind (Lund University, Sweden)
2:45 Mobility Extraction in Thin-Channel InGaAs MOSFETs
Xiaowei Cai (Massachusetts Institute of Technology, USA); Jesus Grajal (Universidad Politécnica de Madrid, Spain); Jesus del Alamo (MIT, USA)

We3D3: Power (GaN)

Room: DR 5&6
Chair: Michael J Uren (University of Bristol, United Kingdom (Great Britain))
1:30 Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment
Kai Fu (Arizona State University, USA); Ronghui Hao (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, P.R. China); Baoshun Zhang (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China); Yuji Zhao (Arizona state University, USA)
1:45 Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer
Meriem Bouchilaoun (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); Christophe Rodriguez and Abdelatif Jaouad (University of Sherbrooke, Canada); Hassan Maher (Université de Sherbrooke, Canada)
2:00 Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications
Mengyang Yuan and Tomas Palacios (Massachusetts Institute of Technology, USA)
2:15 Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation
Qifeng Lyu and Huaxing Jiang (Hong Kong University of Science and Technology, Hong Kong); Peng Xiang and Kai Cheng (Enkris Semiconductor, China); Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:30 MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC
Frank Brunner, Oliver Hilt, Anna Reis and Joachim Wuerfl (Ferdinand-Braun-Institut, Germany); Markus Weyers (Ferdinand-Braun-Institut Berlin, Germany)
2:45 Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode
Chao Liu (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Riyaz Mohammed Abdul Khadar (École Polytechnique Federale de Lausanne, Switzerland); Elison Matioli (EPFL, Switzerland)
3:00 A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates
Vladimir Odnoblyudov, Ozgur Aktas and Shari Farrens (Qromis Inc., USA); Cem Basceri (Qromis Inc, USA); Travis Anderson, Lunet Luna, Marko Tadjer, Andrew Koehler, Karl Hobart and Fritz Kub (Naval Research Laboratory, USA)

Wednesday, May 30 3:00 - 3:30

WeCB2: Coffee Break

Wednesday, May 30 3:30 - 4:45

We4A4: Lasers

Room: Salon M
Chair: Stephanie Law (University of Delaware, USA)
3:30 Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation
Hamidreza Esmaielpour and Vincent Whiteside (University of Oklahoma, USA); Herath Piyathilaka (West Virginia University, USA); Sangeetha Vijeyaragunathan and Bin Wang (University of Oklahoma, USA); Echo Adcock-Smith and Kenneth Roberts (University of Tulsa, USA); Tetsuya Mishima and Michael Santos (University of Oklahoma, USA); Alan Bristow (West Virginia University, USA); Ian Sellers (University of Oklahoma, USA)
3:45 Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures
Aymen Yangui (University of Tokyo, Japan); Tifei Yan and Marc Bescond (Institute of Industrial Science, University of Tokyo, Japan); Naomi Nagai and Kazuhiko Hirakawa (University of Tokyo, Japan)
4:00 [Invited] High-Contrast Gratings in VCSELs
Connie Chang-Hasnain (UC Berkeley, USA)
4:30 Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors
Hoi Wai Choi, Kwai Hei LI and Haitao Lu (The University of Hong Kong, Hong Kong)

We4B4: Wide Band Gap

Room: DR 3&4
Chair: Mary Crawford (Sandia National Laboratories, USA)
3:30 40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz
Weichuan Xing (Nangyang Technological University, Singapore); Zhihong Liu (Singapore-MIT Alliance for Research and Technology, Singapore); Kumud Ranjan (Nanyang Technological University, Singapore); Yu Gao (Singapore-MIT Alliance for Research and Technology Center, Singapore); Geok Ing Ng (NTU, Singapore); Tomas Palacios (Massachusetts Institute of Technology, USA)
3:45 Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces
Zhe Cheng (Georgia Institute of Technology, USA); Tingyu Bai, Yekan Wang and Chao Li (UCLA, USA); Tatyana Feygelson, Marko Tadjer and Bradford Pate (Naval Research Laboratory, USA); Brian M. Foley and Baratunde Cola (Georgia Institute of Technology, USA); Mark Goorsky (University of California, Los Angeles, USA); Karl Hobart (Naval Research Laboratory, USA); Samuel Graham, Jr (Georgia Institute of Technology & Oak Ridge National Laboratory, USA)
4:00 Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures
Joseph Casamento, Debdeep Jena and Huili Xing (Cornell University, USA)
4:15 Enhanced Deep Ultraviolet Response of SiC APDs
Anand Sampath, Stephen Kelley and Jeremy Smith (US Army Research Lab, USA); Ryan Enck (US Army Research Laboratory, USA); Brenda VanMil (US Army Research Lab, USA); Yaojia Chen and Joe C. Campbell (University of Virginia, USA); Michael Wraback and Gregory Garrett (US Army Research Lab, USA)

We4C4: Organic Semiconductors

Room: Salon T
Chair: David Gundlach (National Institute of Standards and Technology, USA)
3:30 [Invited] Microstructure and Morphology Measurements for Organic Electronics
Dean DeLongchamp (National Institute of Standards and Technology, USA)
4:00 The Role of Higher Order Effects in Rubrene/C60 OLEDs
Sebastian Engmann (National Institute of Standards and Technology, USA); Adam Barito, Emily Bittle and Lee Richter (National Institute of Standards and Technology); Chris Giebink (The Pennsylvania State University, USA); David Gundlach (National Institute of Standards and Technology, USA)
4:15 Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides
Siyuan Zhang, Heather Hill, Angela Hight Walker, Christina Hacker and Sujitra Pookpanratana (National Institute of Standards and Technology, USA)
4:30 Growth of Molecularly Doped Organic Single Crystal by a Novel Method Using Electrospray and Low Vapor Pressure Solvent
Keita Takeuchi (Sophia University, Japan)

We4D4: Novel Materials (2D Materials)

Room: DR 5&6
Chair: John Heron (University of Michigan - Ann Arbor, USA)
3:30 [Invited] High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides
Christopher Hinkle (University of Texas at Dallas, USA)
4:00 Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy
Martin Heilmann, Siamak Nakhaie and Michael Hanke (Paul-Drude-Institut für Festkörperelektronik, Germany); Muhammad Bashouti (Ben-Gurion University of the Negev, Israel); Marcelo Lopes and Henning Riechert (Paul-Drude-Institut für Festkörperelektronik, Germany)
4:15 [Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials
Susan Fullerton and Ke Xu (University of Pittsburgh, USA); Md Mahbubul Islam and David Guzman (Purdue University, USA); Alan Seabaugh (University of Notre Dame, USA); Alejandro Strachan (Purdue University, USA)

Wednesday, May 30 5:00 - 6:30

We5PP-L: Poster Session - Lasers

Room: Morss Hall(50-140)
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array
Ankang Li, Jian Wang, Changzheng Sun, Yaqiong Wang, Bing Xiong, Yi Luo, Zhibiao Hao, Yanjun Han, Lai Wang and Hongtao Li (Tsinghua University, China)
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers
Atsushi Matsumoto and Kouichi Akahane (National Institute of Information and Communications Technology, Japan); Toshimasa Umezawa (National Institute of Information and Communication Technology (NICT), Japan); Shinya Nakajima and Naokatsu Yamamoto (National Institute of Information and Communications Technology, Japan)
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating
Hyunho Jung, Changhyun Han and Hanbit Kim (Seoul National University, Korea (South)); Yeonsang Park and Kyung-Sang Cho (Samsung Advanced Institute of Technology, Korea (South)); Heonsu Jeon (Seoul National University, Korea (South))
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application
Changhyun Han, Hyunho Jung, Jongho Lee and Myungjae Lee (Seoul National University, Korea (South)); Yeonsang Park and Kyung-Sang Cho (Samsung Advanced Institute of Technology, Korea (South)); Heonsu Jeon (Seoul National University, Korea (South))
In-situ and Ex-Situ Metrology for VCSEL Epitaxy
Volker Blank (LayTec AG, Germany); Martin Zorn (JENOPTIK Diode Lab GmbH, Germany); Christian Kaspari, Joachim Rest and Johannes K Zettler (LayTec AG, Germany); Kolja Haberland (LayTec GmbH, Germany); Thomas Zettler (LayTec AG, Germany)
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si
Weicheng Fang, Tatsuya Uryu, Daisuke Inoue, Nagisa Nakamura, Takamasa Yoshida, Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser
Nagisa Nakamura, Tatsuya Uryu, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy
Dong Hak Kim, Dong-Hwan Jun, Hae Yong Jeong, Young-Jin Jeon and Young-Su Choi (KANC, Korea (South)); Jungho Kim (Kyung Hee University, Korea (South)); JoonHyun Kang (Korea Institute of Science and Technology, Korea (South)); Hyun-Duk Yang (KIST, Korea (South)); Jindong Song (Korea Institute of Science & Technology, Korea (South)); Il Ki Han (KIST, Korea (South))
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications
Moataz Eissa and Junichi Suzuki (Tokyo Instittue of Technology, Japan); Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)

We5PP-O: Poster Session - Organic and Novel Semiconductors

Room: Morss Hall(50-140)
All Exciplex Structure of Highly Efficient Tandem WOLEDs
Wen-Yi Hung and Pin-Yi Pin-Yi Chiang (National Taiwan Ocean University, Taiwan); Ken-Tsung Wong (National Taiwan University, Taiwan); Chih-Hao Chang (Yuan Ze University, Taiwan)
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes
Chih-Hao Chang, Po-Chen Chiu, Hao-Hsuan Chiu and Yi-Ning Lai (Yuan Ze University, Taiwan); Wen-Yi Hung (National Taiwan Ocean University, Taiwan)
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds
Chih-Hao Chang (Yuan Ze University, Taiwan); Chin-Wei Lu and Chih-Chieh Tsai (Providence University, Taiwan); Yu-Chien Hsh, Chun-Han Lin and Chia-Wei Liao (Yuan Ze University, Taiwan)
Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM
Byeong Ryong Lee, Ju Hyun Park and Tae Geun Kim (Korea University, Korea (South))
Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device
Xiaozhong Zhang and Zhaochu Luo (Tsinghua University, China)
Effect of Schottky Interfaces in Yttria Based Memristive Devices
Mangal Das, Amitesh Kumar, Rohit Singh, Md Arif Khan and Biswajit Mandal (Indian Institute of Technology Indore, India); Shaibal Mukherjee (Indian Institute of Technology, Indore, India)
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior
Amitesh Kumar, Mangal Das, Md Arif Khan and Rohit Singh (Indian Institute of Technology Indore, India); Vivek Garg (Indian Institute of Technology, Indore, India); Abhinav Kranti (Indian Institute of Technology Indore, India); Shaibal Mukherjee (Indian Institute of Technology, Indore, India)
Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing
Andrew Stephan, Jiaxi Hu and Steven Koester (University of Minnesota, USA)
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation
Aya Uruno (Waseda University, Japan); Masakazu Kobayashi (Waseda University, Japan)

We5PP-Po: Poster Session - Power Devices

Room: Morss Hall(50-140)
3.3-mΩ·cm2 GaN-based Vertical Trench MOSFET with Threshold Voltage Reaching 6.2 V
Xing Lu (South China University of Technology, China)
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates
Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani and Mohammed Alomari (Institute for Microelectronics Stuttgart, Germany); Michael Heuken (AIXTRON SE, Germany); Clemens Waechter and Thomas Bergunde (AZUR SPACE Solar Power GmbH, Germany); Joachim Burghartz (Institut für Mikroelektronik Stuttgart, Germany)
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact
Yi-Sheng Chang, Bo-Hong Li, Wang Hsiang-Chun and Hsien-Chin Chiu (Chang Gung University, Taiwan); Hsueh Kuang-Po (Vanung University, Taiwan)
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs
Young-Ki Kwon, Ji Hyun Hwang, Ha Jin Mun, Sungbae Lee, Sung-Min Hong and Jae-Hyung Jang (Gwangju Institute of Science and Technology, Korea (South))
AlGaN/GaN HEMTs with Reduced Self-Heating
Maira Elksne, Abdullah Al-Khalidi and Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN
Austin Hickman, Samuel Bader, Reet Chaudhuri, Kazuki Nomoto, SM Islam, Huili Xing and Debdeep Jena (Cornell University, USA)
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications
Qingyun Xie (Massachusetts Institute of Technology, USA); Garrett Schlenvogt and Thomas Jokinen (Silvaco, Inc., USA); Tomas Palacios (Massachusetts Institute of Technology, USA)
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism
Marie-Clara Pépin and Hassan Maher (Université de Sherbrooke, Canada); Christophe Rodriguez (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France)
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance
Bilal Hassan and Adrien Cutivet (UniversitÌé de Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); Christophe Rodriguez (University of Sherbrooke, Canada); François Boone and Hassan Maher (Université de Sherbrooke, Canada); Meriem Bouchilaoun (University of Sherbrooke, Canada)
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices
Izak Baranowski and Hong Chen (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Jossue Montes, Kai Fu, Tsung-Han Yang and Xuanqi Huang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)

We5PP-RF: Poster Session - RF Devices

Room: Morss Hall(50-140)
On the Large Signal Modeling of MM-wave GaAs PIN Diodes
Iltcho Angelov (Chalmers University of Technology & GOTMIC AB, Sweden); Marcus Gavell (Chalmers, Sweden); Goran Granstrom (GOTMIC, Sweden); Mattias Ferndahl (Gotmic AB, Sweden)
Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors
Sergey Rudin and Greg Rupper (United States Army Research Laboratory, USA); Michael Shur (Rensselaer Polytechnic Institute, USA)
Development of 25 GHz InGaAs/InP P-I-N Photodetectors for High Speed Optical Communications
Debdas Pal (MACOM, USA)
High Power mmW Switch Technologies
Timothy Boles (MACOM Technology Solutions, USA)
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate
Kai-Chieh Hsu, Li-Cheng Chang, Yung-Ting Ho and Chao-Hsin Wu (National Taiwan University, Taiwan)
High Speed GaN-based micro-LED Arrays for Visible Light Communication
I-Chen Tseng (Graduate Institute of Photonics and Optoelectronics National Taiwan University, Taiwan); Chao-Hsin Wu (National Taiwan University, Taiwan)
E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation
Shun-Cheng Yang and Chao-Hsin Wu (National Taiwan University, Taiwan)
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs
Jumpei Sumino (Nagoya Institute of Technology, Japan); Yamato Osada and Ryuuichirou Kamimura (ULVAC Inc., Japan); Yuya Ikedo, Naoki Kato, Kazuyuki Fukumura and Akio Wakejima (Nagoya Institute of Technology, Japan)
Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub
Gregory Aizin (Kingsborough Community College, USA); John Mikalopas (Kingsborough College, USA); Michael Shur (Rensselaer Polytechnic Institute, USA)
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power
Quan Wang (Shandong University & Institute of Semiconductors, Chinese Academy of Sciences, China); Xiaoliang Wang, Hongling Xiao, Lijuan Jiang, Chun Feng, Wei Li and Fengqi Liu (Institute of Semiconductors, Chinese Academy of Sciences, China); Xiangang Xu (Shandong University, P.R. China); Zhanguo Wang (Institute of Semiconductors, Chinese Academy of Sciences, China)
Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region
Safumi Suzuki and Masahiro Asada (Tokyo Institute of Technology, Japan)
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel
En-Shuo Lin, Indraneel Sanyal, Yen-Chang Lee, Yu-Chuan Lin, Jen-Inn Chyi and Wei Jen Hsueh (National Central University, Taiwan)
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications
Jaejin Lim and D. Ha (KAIST, Korea (South)); Maengkyu Kim (Korea Advanced Institute of Science and Technology, Korea (South)); Kyounghoon Yang (KAIST, Korea (South))
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer
Koki Osawa, Mizuho Hiraoka, Tomoya Kishi and Yuki Endoh (Tokyo University of Science, Japan); Jun Takeuchi (Tokyo University of Sciense, Japan); Ryuto Machida and Hiroki Fujishiro (Tokyo University of Science, Japan)
DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon
Qi Cheng (University of Delaware, USA); Sourabh Khandelwal (Macquarie University, Australia); Yuping Zeng (University of Delaware, USA)
Modeling the Parasitic Bipolar Effect in InGaAs FinFETs
Xin Zhao, Alon Vardi and Jesus del Alamo (MIT, USA)
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz
Shinpei Yamashita and Michihiko Suhara (Tokyo Metropolitan University, Japan); Kiyoto Asakawa (Tokyo Metropolitan College of Industrial Technology, Japan); Kenichi Kawaguchi (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Tsuyoshi Takahashi and Masaru Sato (Fujitsu Laboratories Ltd., Japan); Naoya Okamoto (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan)
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology
Masataka Nakanishi, Michihiko Suhara and Naoto Okumura (Tokyo Metropolitan University, Japan); Kiyoto Asakawa (Tokyo Metropolitan College of Industrial Technology, Japan)
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering
Takahiro Suzuki, Yui Fujisawa, Shougo Kawamura, Konosuke Kumasaka, Ryuto Machida and Hiroki Fujishiro (Tokyo University of Science, Japan)

We5PP-WBG: Poster Session - Wide Band Gap

Room: Morss Hall(50-140)
Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si
Christian Manz (Fraunhofer IAF, Germany); Fouad Benkhelifa (IAF Fraunhofer, Germany); Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics, Germany); Oliver Ambacher (Fraunhofer IAF & IMTEK, University Freiburg, Germany)
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams
Akira Uedono (University of Tsukuba, Japan); Shinya Takashima, Masaharu Edo and Katsunori Ueno (Fuji Electric Co., Japan); Hideaki Matsuyama (Euji Electric Co., Japan); Werner Egger and Toenjes Koschine (UniBwM, Germany); Christoph Hugenschmidt and Marcel Dickmann (TUM, Germany); Kazunobu Kojima and Shigefusa Chichibu (Tohoku University, Japan); Shoji Ishibashi (AIST, Japan)
Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation
Masamichi Akazawa, Naoshige Yokota and Kei Uetake (Hokkaido University, Japan)
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films
Md Arif Khan, Rohit Singh, Ritesh Bhardwaj, Amitesh Kumar, Mangal Das and Abhinav Kranti (Indian Institute of Technology Indore, India); Shaibal Mukherjee (Indian Institute of Technology, Indore, India)
Nitrogen-face AlN-based Field-Effect Transistors
Hironori Okumura (University of Tsukuba & MIT, Japan); Jori Lemettinen and Sami Suihkonen (Aalto University, Finland); Tomas Palacios (Massachusetts Institute of Technology, USA)
Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition
Wei-Sheng Liu (Department of Photonics Engineering, Yuan Ze University, Taiwan); Yu-Lin Chang and Hui-Yu Chen (University of Yuan Ze, Taiwan)
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures
Rohit Singh, Md Arif Khan, Amitesh Kumar and Abhinav Kranti (Indian Institute of Technology Indore, India); Shaibal Mukherjee (Indian Institute of Technology, Indore, India)
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane
Seungmin Lee, Daeyoung Moon, Daehan Choi and Hyejin Lim (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory
Ryota Furuki, Masato Oda and Yuzo Shinozuka (Wakayama University, Japan)
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool
Yasushi Iyechika, Hajime Nago, Masayuki Tsukui and Hideshi Takahashi (NuFlare Technology, Inc., Japan)
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD
Fen Guo and Yanbin Qin (Institute of Semiconductors, Chinese Academy of Sciences, China); Quan Wang (Shandong University & Institute of Semiconductors, Chinese Academy of Sciences, China); Lijuan Jiang, Wei Li, Chun Feng, Xiaoliang Wang and Fengqi Liu (Institute of Semiconductors, Chinese Academy of Sciences, China); Xiangang Xu (Shandong University, China); Zhanguo Wang (Institute of Semiconductors, Chinese Academy of Sciences, China)
MOCVD-grown BAlN-contained Heterojunctions
Haiding Sun and Kuang-Hui Li (KAUST, Saudi Arabia); Young Jea Park, Theeradetch Detchprohm and Russell Dupuis (School of Electrical and Computer Engineering, Georgia Institute of Technology, USA); Xiaohang Li (King Abdullah University of Science and Technology, Saudi Arabia)
Mg Recoil Implantation into GaN with Incident Nitrogen Ion
Toshikazu Yamada (National Institute of Advanced Industrial Science and Technology, Japan)
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb
Antonio Llopis (Army Research Laboratory, USA); Wendy Sarney and Stefan Svensson (US Army Research Laboratory, USA); Natalie Segercrantz (Aalto University, Finland); Yannick Baumgartner (Lawrence Berkeley National Laboratory, USA); Min Ting (University of California, Berkeley & Lawrence Berkeley National Laboratory, USA); Kin Man Yu (Lawrence Berkeley National Lab, USA); Samuel Mao (University of California, Berkeley, USA); Wladek Walukiewicz (Lawrence Berkeley National Lab, USA); Michael Wraback (US Army Research Lab, USA)
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer
Chuan-Yue Yu, Shiou-Ming Wu, Indraneel Sanyal and Jen-Inn Chyi (National Central University, Taiwan)
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy
Zhibo Zhao (Massachusetts Institute of Technology`, USA); Silvija Gradecak and Akshay Singh (Massachusetts Institute of Technology, USA); Sarah Goodman (MIT, USA); Govindo Syaranamual and Saurabh Srivastava (Singapore-MIT Alliance in Research and Technology, Singapore); Jing Yang Chung and Abdul Kadir (National University of Singapore, Singapore); Li Zhang (Singapore-MIT Alliance in Research and Technology, Singapore); Soo-Jin Chua (National University of Singapore, Singapore); Eugene A. Fitzgerald (Massachusetts Institute of Technology, USA); Stephen Pennycook (National University of Singapore, Singapore)
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes
Jossue Montes (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Tsung-Han Yang, Xuanqi Huang, Hong Chen, Izak Baranowski and Kai Fu (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED
Abdullah Almogbel, Burhan Saifaddin, Christian J Zollner and Michael Iza (University of California, Santa Barbara, USA); Hamad Albraithen, Ahmed Y. Alyamani and Abdulrahman M. Albadri (King Abdulaziz City for Science and Technology, Saudi Arabia); Steven DenBaars (University of California, Santa Barbara, USA); Shuji Nakamura (University of California Santa Barbara, USA); James Speck (University of California, Santa Barbara, USA)
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap
Naoto Kumagai, Hisashi Yamada, Toshikazu Yamada and Xue-Lun Wang (National Institute of Advanced Industrial Science and Technology, Japan); Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
Defect Control in GaN-on-Si Wafers for Power Electronics Applications
Hongjing Huo, Peng Xiang, Liyang Zhang, Ni Yin and Kai Cheng (Enkris Semiconductor, China)

Wednesday, May 30 7:00 - 8:30

We6RS: Rump Session: Industrial III-V's: continuing the single life or more fulfillment through marriage with silicon?

Panel : Tim Boles(MACOM),Michael Heuken (Aixtron),John Cowles (Analog Devices), Jose Jimenez(Qorvo),Wayne Johnson (IQE), Tom Kazior (Raytheon),Matsumoto Koh (Taiyo Nipon Sanso),Steve Ringel (4Power LLC)
Room: Wong(E-51)
Chair: Eugene A. Fitzgerald (Massachusetts Institute of Technology, USA)

Thursday, May 31

Thursday, May 31 8:30 - 10:00

Th1A5: Lasers

Room: Salon M
Chair: Nelson Tansu (Lehigh University, USA)
8:30 [Invited] Mid-Infrared Quantum Cascade Lasers and Applications
Claire Gmachl (Princeton University, USA)
9:00 Evolution of Material Systems for THz Quantum Cascade Lasers
Hermann Detz (TU Wien & Austrian Academy of Sciences, Austria); Martin Kainz, Sebastian Schönhuber, Tobias Zederbauer, Donald MacFarland, Michael Krall, Christoph Deutsch, Martin Brandstetter, Aaron M Andrews, Werner Schrenk, Karl Unterrainer and Gottfried Strasser (TU Wien, Austria)
9:15 III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers
Ayushi Rajeev (University of Wisconsin-Madison, USA); Bei Shi (The Hong Kong University of Science and Technology, Hong Kong); Qiang Li (Hong Kong University of Science and Technology, Hong Kong); Jeremy Kirch, Micah Cheng and Aaron Tze Rue Tan (University of Wisconsin-Madison, USA); Kei May Lau (Hong Kong University of Science and Technology, Hong Kong); Luke Mawst and Thomas Kuech (University of Wisconsin-Madison, USA)
9:30 Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region
Chadwick Canedy and Chul-Soo Kim (Naval Research Laboratory, USA); Mijin Kim (KeyW Corporation, USA); William Bewley and Charles Merritt (Naval Research Laboratory, USA); Michael V Warren (ASEE Fellow at Naval Research Laboratory, USA); Stephanie Tomasulo, Igor Vurgaftman and Jerry Meyer (Naval Research Laboratory, USA)
9:45 High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation
Yuan Tian and Douglas Hall (University of Notre Dame, USA)

Th1B5: Wide Band Gap

Room: Wong(E-51)
Chair: Zetian Mi (University of Michigan, USA)
8:30 Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency
Richard Liu (University of Illinois at Urbana Champaign, Micro and Nanotechnology Laboratory); Richard Schaller (Argonne National Laboratory, USA); Chang Qiang Chen (University of Illinois at Urbana Champaign, Material Research Laboratory); Can Bayram (University of Illinois at Urbana Champaign, Micro and Nanotechnology Laboratory)
8:45 Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes
Sarah Goodman (MIT, USA); Akshay Singh (Massachusetts Institute of Technology, USA); Zhibo Zhao (Massachusetts Institute of Technology`, USA); Dong Su and Kim Kisslinger (Brookhaven National Laboratory, USA); Rob Armitage, Isaac Wildeson and Parijat Deb (Lumileds LLC, USA); Silvija Gradecak (Massachusetts Institute of Technology, USA)
9:00 [Invited] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges
Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
9:30 Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD
Cory C Lund (UCSB, USA); Anchal Agarwal and Brian Romanczyk (University of California Santa Barbara, USA); Thomas Mates (University of California, USA); Shuji Nakamura (University of California Santa Barbara, USA); Steven DenBaars (Advisor, USA); Umesh Mishra and Stacia Keller (UCSB, USA)
9:45 Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence
Chelsea Haughn and Greg Rupper (United States Army Research Laboratory, USA); Thomas Wunderer, Zhihong Yang and Noble Johnson (Palo Alto Research Center, USA); Michael Wraback and Gregory Garrett (US Army Research Lab, USA)

Th1C5: Novel Materials & Devices

Room: Salon T
Chair: Susan Fullerton (University of Pittsburgh, USA)
8:30 [Invited] Transition Metal Dichalcogenide Memristors and Memtransistors
Mark Hersam (Northwestern University, USA)
9:00 Efficient Learning with Ultra-low Power Compound Synaptic Devices
Huan Zhao (University of Southern California, USA); Ivan Sanchez Esqueda (University of Southern California & Information Sciences Institute, USA); Jing Guo and Zhipeng Dong (University of Florida, USA); Han Wang (University of Southern California, USA)
9:15 A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity
Xiaodong Yan (University of Southern California, USA); Matthew Chin and Madan Dubey (Army Research Laboratory, USA); Han Wang (USC, USA)
9:30 [Invited] Placeholder Title
Andrea Ferrari (University of Cambridge, United Kingdom (Great Britain))

Th1D5: RF (Power)

Room: DR 5&6
Chair: Miguel Urteaga (Teledyne Scientific & Imaging LLC, USA)
8:30 Impact of Traps on RF HEMT Linearity
Wenyuan Sun (the Ohio State University, USA); Jose Jimenez (Qorvo, USA); Aaron Arehart (The Ohio State University, USA)
8:45 Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs
Johan Bergsten, Sebastian Gustafsson, Mattias Thorsell and Niklas Rorsman (Chalmers University of Technology, Sweden)
9:00 AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model
Wondwosen Muhea (Universitat Rovira i Virgili, Spain); Nawel Kermas (Universitat Rovira i Virgili, Algeria); Fetene Yigletu (Addis Ababa Institute of Technology, Ethiopia); Roger Cabré and Benjamín Iñiguez (Universitat Rovira i Virgili, Spain)
9:15 N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers
Shubhra S Pasayat (University of California Santa Barbara, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); Brian Romanczyk, Onur Koksaldi and Anchal Agarwal (University of California Santa Barbara, USA); Matthew Guidry (University of California, Santa Barbara, USA); Chirag Gupta (University of California Santa Barbara, USA); Christian Wurm (University of California, Santa Barbara, USA); Stacia Keller and Umesh Mishra (UCSB, USA)
9:30 [Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz
Robert Howell, Justin Parke, Ron Freitag, Ishan Wathuthanthri, Ken Nagamatsu, Josephine Chang, Eric Stewart and Shalini Gupta (Northrop Grumman, USA)

Thursday, May 31 10:00 - 10:30

ThCB1: Coffee Break

Thursday, May 31 10:30 - 12:30

Th2A6: Lasers

Room: Salon M
Chairs: Claire Gmachl (Princeton University, USA), Javad Shabani (NYU, USA)
10:30 [Invited] Quantum Cascade Lasers on Metamorphic Buffer Layer
Arkadiy Lyakh (University of Central Florida, USA)
11:00 Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser
Hui-Hong Yuan (Institute of Semiconductors, Chinese Academy of Sciences, China); Feng Gao (Institute of Semiconductors, Chinese Academy of Sciences, China); Tao Yang (Institute of Semiconductors, Chinese Academy of Sciences, China)
11:15 Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys
Myungjae Lee (Seoul National University, Korea (South)); Ségolène Callard and Christian Seassal (Institut des Nanotechnologies de Lyon, France); Heonsu Jeon (Seoul National University, Korea (South))
11:30 High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate
Jinkwan Kwoen (The University of Tokyo, Japan); Bongyong Jang (University of Tokyo, Japan); Takeo Kageyama and Katsuyuki Watanabe (The University of Tokyo, Japan); Yasuhiko Arakawa (University of Tokyo, Japan)
11:45 [Invited] Development of Si-based GeSn Laser
Shui-Qing Yu (University of Arkansas, USA)
12:15 Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes
Xiaowei Wang (Boston University, USA); Xiaorui Cui (University of Wisconsin – Madison, USA); John Reno (Sandia National Laboratories, USA); Max Lagally (University of Wisconsin – Madison, USA); Roberto Paiella (Boston University, USA)

Th2B6: Wide Band Gap (Nanostructures)

Room: Wong(E-51)
Chair: Jean-Christophe Harmand (Centre de Nanosciences et de Nanotechnologies, CNRS & Université Paris-Saclay, France)
10:30 High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology
Mahmoud Behzadirad (Center for High Technology Materials (CHTM), University of New Mexico (UNM), Albuquerque, NM, USA); Neal Wostbrock and Mohsen Nami (Center for High Technology Materials (CHTM), University of New Mexico (UNM), USA); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA); Steven Brueck (University of New Mexico, USA); Tito Busani (Center for High Technology Materials (CHTM), University of New Mexico (UNM), USA)
10:45 Europium Doped GaN Nanocolumn Light-Emitting Diodes Exhibiting High Emission-Wavelength Stability
Hiroto Sekiguchi (Toyohashi University of Technology, Japan)
11:00 [Invited] III-Nitride Nanostructures Grown by MBE: Basics and Applications
Enrique Calleja Pardo (Polytechnical University of Madrid, Spain)
11:30 STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers
Alexana Roshko, Matthew Brubaker, Paul Blanchard, Todd Harvey and Kris Bertness (National Institute of Standards and Technology, USA)
11:45 GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication
Mohsen Nami (Yale University, USA); Arman Rashidi (Center for High Technology Materials, University of New Mexico, USA); Morteza Monavarian (Center for High Technology Materials, The University of New Mexico, USA); Mostafa Peysokhan (University of New Mexico, USA); Ashwin Rishinaramangalam (Center for High Technology Materials, University of New Mexico, USA); Isaac Stricklin (University of New Mexico, USA); Igal Brener (Sandia National Laboratories, USA); Steven Brueck (University of New Mexico, USA); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
12:00 Optical Absorption and Passivation of Surface States in III-nitride Photonics
Ian Rousseau and Gordon Callsen (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Jean-François Carlin (EPFL-LASPE, Switzerland); Raphaël Butté (Ecole Polytechnique Fédérale de Lausanne, Switzerland); Nicolas Grandjean (EPFL, Switzerland)
12:15 Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells
Xuanqi Huang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Hong Chen, Izak Baranowski and Jossue Montes (Arizona State University, USA); Brendan Gunning and Dan Koleske (Sandia National Laboratories, USA); Yuji Zhao (Arizona state University, USA)

Th2C6: Novel Materials & Devices

Room: Salon T
Chair: Christopher Hinkle (University of Texas at Dallas, USA)
10:30 [Invited] Growth and Electronic Properties of Heusler Epitaxial Thin Films
Chris Palmstrom (University of California Santa Barbara, USA)
11:00 Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells
Fabian Hartmann (University of Wuerzburg, Germany); Lukas Worschech (Universität Würzburg, Germany); Martin Kamp (Universität Wurzburg, Germany); Pierre Pfeffer (University of Wuerzburg, Germany); Sven Höfling (Universität Würzburg, Germany); Georg Knebl (University of Würzburg, Germany)
11:15 Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling
Ya Zhang, Boqi Qiu, Naomi Nagai and Kazuhiko Hirakawa (University of Tokyo, Japan)
11:30 [Invited] Pathways to Low Energy Control of Magnetism Using Multiferroics
John Heron (University of Michigan - Ann Arbor, USA)
12:00 Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator
Jiahao Han (Massachusetts Institute of Technology, USA); Anthony Richardella (The Pennsylvania State University, USA); Saima Siddiqui and Joseph Finley (Massachusetts Institute of Technology, USA); Nitin Samarth (The Pennsylvania State University, USA); Luqiao Liu (Massachusetts Institute of Technology, USA)
12:15 Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures
Hussain Alsalman (KACST & University of Minnesota Twin Cities, USA); Javad Azadani and Roberto Grassi (University of Minnesota Twin Cities, USA); Steven Koester and Tony Low (University of Minnesota, USA)

Th2D6: Wide Band Gap (Ga2O3)

Room: DR 5&6
Chair: Marko Tadjer (Naval Research Laboratory, USA)
10:30 A First Principles Approach on the Possibility of P-Type Ga2O3
Alexandros Kyrtsos, Masahiko Matsubara and Enrico Bellotti (Boston University, USA)
10:45 Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR)
Jie Zhu, Sandhaya Koirala, Xuewang Wu and Yingying Zhang (University of Minnesota, Twin Cities, USA); Steven Koester (University of Minnesota, USA); Xiaojia Wang (University of Minnesota, Twin Cities, USA)
11:00 Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3
Kentaro Kaneko, Shu Takemoto and Shin-ichi Kan (Kyoto University, Japan); Takashi Shinohe (FLOSFIA INC., Japan); Shizuo Fujita (Kyoto University, Japan)
11:15 Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates
Houqiang Fu (Arizona state University, USA); Hong Chen, Xuanqi Huang, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
11:30 β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate
Jinhyun Noh, Sami Alajlouni, Mengwei Si and Hong Zhou (Purdue University, USA); Marko Tadjer (Naval Research Laboratory, USA); Ali Shakouri and Peide Ye (Purdue University, USA)
11:45 Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V
Zongyang Hu, Kazuki Nomoto, Wenshen Li and Nicholas Tanen (Cornell University, USA); Kohei Sasaki and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Tohru Nakamura (Hosei University, Japan); Debdeep Jena and Huili Xing (Cornell University, USA)
12:00 [Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors
Rebecca L Peterson, Christopher Allemang and Youngbae Son (University of Michigan, USA)

Thursday, May 31 12:30 - 1:30

ThLB: Lunch Break

Thursday, May 31 1:00 - 7:00

Th3: Excursion to Downtown Boston

Room: OFFSITE

Thursday, May 31 7:00 - 8:30

Th4: Conference Banquet

For banquet ticket holders only
Room: OFFSITE : FENWAY PARK

Friday, June 1

Friday, June 1 8:30 - 10:00

Fr15PP-No: Poster Session - Novel metarials and device physics

Room: Morss Hall(50-140)
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides
Annika Grundmann (RWTH Aachen, Germany); Matthias Marx (AIXTRON SE, Germany); Holger Kalisch and Andrei Vescan (RWTH Aachen, Germany); Dominik Andrzejewski (University Duisburg Essen, Germany); Tilmar Kümmell (University Duisburg-Essen, Germany); Gerd Bacher (Univerität Duisburg Essen, Germany); Michael Heuken (AIXTRON SE, Germany)
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth
Giriprasanth Omanakuttan (Royal Institute of Technology-KTH, Sweden); Oscar Martínez (University of Valladolid, Spain); Saulius Marcinkevicius and Tomas Uzdavinys (KTH Royal Institute of Technology, Sweden); Juan Jiménez (Unversity Valladolid, Spain); Sebastian Lourdudoss (Royal Institute of Technology, Sweden); Yan-Ting Sun (Royal Institute of Technology-KTH, Sweden)
FastHall™: A Method to Measure Low Mobility Materials for Multi-Carrier Analysis
Jeffrey Lindemuth (Lake Shore Cryotronics, USA)
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method
Wen-Ray Chen (National Formosa University, Taiwan); Po-Hsun Hsu (National University of Kaohsiung, Taiwan); Pao-Hsun Huang (National Cheng-Kung University, Taiwan); Chien-Jung Huang (National University of Kaohsiung, Taiwan)
In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors
Kai-Lin Fan (National Taiwan University & Integrated Optical Electronic Device, Taiwan)
InSe Metal Contact Optimization for Enhanced InSe FET Performance
Badreyya AlShehhi (Khalifa University & Masdar Campuse, United Arab Emirates); Srinivasa Tamalampudi (Masdar Institute, USA); Irfan Saadat (Faculty - Khalifa University & Masdar Institute, United Arab Emirates); Ibraheem Almansouri (Masdar Institute of Science and Technology, United Arab Emirates)
3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects
Han-Wei Hsiao and Yuh-Renn Wu (National Taiwan University, Taiwan)
Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application
Valentina Korchnoy (Technion - Israel Institute of Technology, Israel); Michael Lisiansky (Tower Semiconductor Ltd, Israel); Alex Berner (Technion-Israel Institute of Technology, Israel)
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique
Pallavi Patil, Fumitaro Ishikawa and Satoshi Shimomura (Ehime University, Japan); Esperanza Luna (Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin, Germany)
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6
Roy Chung and Gregory Garrett (US Army Research Lab, USA); Ryan Enck (US Army Research Laboratory, USA); Michael Wraback and Anand Sampath (US Army Research Lab, USA)
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs
Shiou-Ming Wu, Indraneel Sanyal, Geng-Yen Lee and Jen-Inn Chyi (National Central University, Taiwan)
Interplay Between Fabry-Pérot Resonance and Disorder Effect in Middle Mobility Quantum Point Contacts
Motoi Takahashi (Tohoku University, Japan)
Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples
Nelly Bautista (Universidad Nacional de Colombia & Fundación Universitaria Unipanamericana, Colombia); Elkin Giovanni Pineda Rojas and Álvaro Mariño Camargo (Universidad Nacional de Colombia, Colombia)
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application
Nazir Hossain, Poorna Marthi, Jean Francois Millithaler and Martin Margala (University of Massachusetts Lowell, USA)

Fr15PP-NS: Poster Session - Nanostructures

Room: Morss Hall(50-140)
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering
Rodrigo Blasco and Arantzazu Nuñez-Cascajero (Univesidad de Alcala, Spain); Akhil Ajay and Eva Monroy (CEA-Grenoble, France); Sirona Valdueza (University of Alcala, Spain); Fernando Naranjo (Univesidad de Alcala, Spain)
Structural Characteristics of GaAs/GaAsBi Nanowires
Kosuke Yano and Kyohei Takada (Graduate Schoolof Science and Engineering, Ehime University, Japan); Pallavi Patil and Satoshi Shimomura (Ehime University, Japan); Yumiko Shimizu (Toray Research Center, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy
Supeeranat Posri and Supachok Thainoi (Chulalongkorn University, Thailand); Suwit Kiravittaya (Naresuan University, Thailand); Aniwat Tandaechanurat (International School of Engineering (ISE), Chulalongkorn University, Thailand); Noppadon Nuntawong (NECTEC, Thailand); Suwat Sopitpan (Thai Microelectronics Center (TMEC), Thailand); Visittapong Yordsri (National Metal and Materials Technology Center, Thailand); Chanchana Thanachayanont (National Metal and Material Technology Center, Thailand); Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow (Chulalongkorn University, Thailand)
Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays
Mike Hawkridge (Malvern Panalytical, USA); Lars Grieger (Malvern Panalytical, The Netherlands)
Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires
Naoki Tsuda (Graduate School of Science and Engineering, Ehime University, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Molecular Beam Epitaxial Growth of GaInNAs Nanowires
Mitsuki Yukimune and Hiroya Ikeda (Graduate School of Science and Engineering, Ehime Univercsty, Japan); Ryo Fujiwara (Graduate School of Science and Engineering, Ehime University, Japan); Mattias Jansson, Weimin Chen and Irina Buyanova (Physics, Chemistry and Biology, Linköping University, Sweden); Fumitaro Ishikawa (Ehime University, Japan)
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent
Ryo Fujiwara (Graduate School of Science and Engineering, Ehime University, Japan); Hiroya Ikeda and Mitsuki Yukimune (Graduate School of Science and Engineering, Ehime Univercsty, Japan); Mattias Jansson, Weimin Chen and Irina Buyanova (Physics, Chemistry and Biology, Linköping University, Sweden); Fumitaro Ishikawa (Ehime University, Japan)
Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures
Nupur Saxena and Tania Kallsi (Central University of Jammu, India); Pragati Kumar (Central University of Jammu (CUJ), Jammu, India)
Investigations of Light Polarization of GaAs/AlGaOx Nanowire
Jun Natsui (Graduate School of Science and Engineering, Ehime University, Japan); Naoki Yamamoto (Tokyo Institute of Technology, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates
Sergey Balakirev, Maxim Solodovnik, Mikhail Eremenko, Ilya Mikhaylin and Oleg Ageev (Southern Federal University, Russia)
Droplet Epitaxy of in/algaas Nanostructures
Maxim Solodovnik, Sergey Balakirev, Mikhail Eremenko, Ilya Mikhaylin and Oleg Ageev (Southern Federal University, Russia)
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition
Koichi Yamaguchi, Akinori Makaino, Katsuyoshi Sakamoto and Tomah Sogabe (The University of Electro-Communications, Japan)
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix
Jhuma Saha, Debi Panda, Mahitosh Biswas and Debabrata Das (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots
Debi Panda, Jhuma Saha, Mahitosh Biswas and Debabrata Das (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting
Debabrata Das, Debi Panda, Jhuma Saha and Vinayak Chavan (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device
Wei-Sheng Liu (Department of Photonics Engineering, Yuan Ze University, Taiwan); Shao-Yang Lin, Ren-Yo Liu and Hsiao-Chien Lin (University of Yuan Ze, Taiwan)
Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer
Binita Tongbram (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission
Toshiyuki Kaizu, Takaaki Koike and Takashi Kita (Kobe University, Japan)
HSQ Etching Resistance Dependence on Substrate
Jie Zhang, Kazy Shariar and Yuping Zeng (University of Delaware, USA)
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons
Kazy Shariar, Jie Zhang, Zijian Wang, Robert Opila and Yuping Zeng (University of Delaware, USA)
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)
Tomonori Ito, Toru Akiyama, Kohji Nakamura and Abdul-Muizz Pradipto (Mie University, Japan)
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry
Katie Hore and Zhanxiang Zhao (Oxford Instruments Plasma Technology, United Kingdom (Great Britain)); Ligang Deng (Oxford Instruments & Plasma Technology, United Kingdom (Great Britain)); Mark McNie (Oxford Instruments Plasma Technology, United Kingdom (Great Britain))

Fr15PP-Opt: Poster Session - Optoelectronics

Room: Morss Hall(50-140)
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP
Yingjie Ma (Shanghai Institute of Microsystem and Information Technology, China); Yi Gu (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China); Xingyou Chen (Shanghai Institute of Microsystem and Information Technology, China); Yanhui Shi (Shanghai Institute of Microsystem and Information Technology, USA); Wanyan Ji, Ben Du and Yonggang Zhang (Shanghai Institute of Microsystem and Information Technology, China)
Doping Engineering of Extended Wavelength InGaAs Photodetectors
Xingyou Chen (Shanghai Institute of Microsystem and Information Technology, China); Yi Gu (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China); Yingjie Ma and Ben Du (Shanghai Institute of Microsystem and Information Technology, China); Yanhui Shi (Shanghai Institute of Microsystem and Information Technology, USA); Yonggang Zhang (Shanghai Institute of Microsystem and Information Technology, China)
Towards the Monolithic Integration of GaSb Solar Cells on Si
Julie Tournet and Yves Rouillard (University of Montpellier, CNRS, France); Eric Tournié (Université de Montpellier, France)
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice
Marie Delmas and Yaksh Rawal (Cardiff University, United Kingdom (Great Britain)); Baolai Liang (University of California, Los Angeles, USA); Diana Huffaker (Cardiff University, United Kingdom (Great Britain))
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV
Stefano Soresi, Claire Besançon and Nicolas Vaissiere (III-V Lab, France); Gwénaëlle Hamon (Total S.A. Renewables, France); Alexandre Larrue (III-V Lab, France); José Alvarez (GeePs CentraleSupélec, France); Mickael Martin and Thierry Barron (LTM CNRS, CEA, France); Jean Decobert (Alcatel-Thales III-V Lab, France)
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors
Ananth Saran Yalamarthy, Ruth Miller, Karen Dowling and Debbie Senesky (Stanford University, USA)
Light Extraction Enhancement of AlGaInP LED by Etching Process
Ray-Hua Horng, You-Cheng Lin and Fu-Gow Tarntair (National Chiao Tung University, Taiwan); Dong Wuu (NCHU, Taiwan)
High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes
Tae Hoon Park, Tae Ho Lee and Tae Geun Kim (Korea University, Korea (South))
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate
Satoshi Nishikawa (Mitsubishi Electric Corporation, Japan); Yuichiro Horiguchi (Mitsubishi Electric Corporartion, Japan); Yohei Hokama, Masakazu Takabayashi, Syusaku Hayashi, Koichi Akiyama, Fukiko Hirose, Hayato Sano, Keita Mochizuki, Keigo Fukunaga and Keisuke Matsumoto (Mitsubishi Electric Corporation, Japan); Eitaro Ishimura (Mitsubishi electric corporation, Japan)
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure
Takehiko Kikuchi (Sumitomo Electric Industries, LTD, Japan); Junichi Suzuki and Fumihito Tachibana (Tokyo Instittue of Technology, Japan); Naoko Inoue and Hideki Yagi (Sumitomo Electric Industries, LTD., Japan); Moataz Eissa and Takuya Mitarai (Tokyo Instittue of Technology, Japan); Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel
Wei-Sheng Liu (Department of Photonics Engineering, Yuan Ze University, Taiwan); Yi-Hung Lin, Chien-Lung Huang, Chih-Wei Wang, Yi-Ming Chu and Chih-Hao Hsu (University of Yuan Ze, Taiwan)
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC
Yuning Wang and Kumi Nagasaka (Tokyo Institute of Technology, Japan); Junichi Suzuki (Tokyo Instittue of Technology, Japan); Liu Bai (Tokyo Institute of Technology, Japan); Takuya Mitarai (Tokyo Instittue of Technology, Japan); Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect
Rodrigo Blasco and Arantzazu Nuñez-Cascajero (Univesidad de Alcala, Spain); Louis Grenet (CEA Grenoble, France); Javier Olea (Universidad Complutense de Madrid, Spain); Fernando Naranjo (Univesidad de Alcala, Spain); Sirona Valdueza (University of Alcala, Spain)
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band
Hua Yang (Tyndall National Institute, UCC, Ireland); Niall Kelly and Moises Jezzini (Tyndall National Institute, UCC, Cork, Ireland); Agnieszka Gocalinska (Tyndall National Institute, UCC, Ireland); Kevin Thomas (Tyndall National Institute, Ireland); Emanuele Pelucchi (Tyndall National Institute, UCC, Ireland); Frank H Peters (University College Cork, Ireland)
Sidewall Roughness Atomic Force Microscopy Characterization of Deep Etched InP/〖Al〗_x 〖Ga〗_(1-x) 〖In〗_y 〖As〗_(1-y) Structures
Reasat Fahim (University of Glasgow, United Kingdom (Great Britain))
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm
Leo Schowalter, James Grandusky and Craig Moe (Crystal IS, Inc., USA); Jumpei Kasai, Tomohiro Morishita and Akira Yoshikawa (Asahi Kasei, Japan)

Fr1PP-Ga: Poster Session - Ga2O3

Room: Morss Hall(50-140)
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD
Kuang-Hui Li, Haiding Sun, Carlos Torres-Castanedo, Che-Hao Liao and Hsin-Hung Yao (KAUST, Saudi Arabia); Serdal Okur, Tom Salagaj, Aaron Feldman and Gary Tompa (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3
Sooyeoun Oh and Jihyun Kim (Korea University, Korea (South))
X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes
Leidang Zhou (Xi’an Jiaotong University, China); Xing Lu (South China University of Technology, China)
Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement
Li-Chung Cheng, Chiung-Yi Huang and Ray-Hua Horng (National Chiao Tung University, Taiwan)
Miscibility and Phase Separation in (InxGa1-x)2O3
Charlotte Wouters (Leibniz Institute of Crystal Growth, Germany)
Phase Transition Temperatures of α-Ga2O3 on Sapphire
Riena Jinno, Kentaro Kaneko and Shizuo Fujita (Kyoto University, Japan)
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector
Prachi Sharma, Stefan Turan, Gabriel Gedler, Chulsung Bae and Shayla Sawyer (Rensselaer Polytechnic Institute, USA)
Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods
Hoki Son (University of Korea, Korea (South)); Daewoo Jeon (Korea Institute of Ceramic Engineer & Technology, Korea (South))
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties
Alban Maertens (CentraleSupelec & LMOPS, France); Samuel Margueron (Université de Lorraine, France); Frédéric Genty (CentraleSupelec, France); Adulfas Abrutis (University of Vilnius, Lithuania); Thierry Belmonte, Pascal Boulet and Jaafar Ghanbaja (Université de Lorraine, France); Abdelkrim Talbi (IEMN, France); Ausrine Bartasyte (FEMTO-ST Institute, France)
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy
Keita Konishi (Tokyo University of Agriculture and Technology, Japan); Ken Goto (Tamura Corporation, Japan); Hisashi Murakami (Tokyo University of Agriculture and Technology, Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer
Man Hoi Wong (National Institute of Information and Communications Technology, Japan); Ken Goto, Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Hisashi Murakami and Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)
Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition
Daisuke Tahara, Hiroyuki Nishinaka and Masahiro Yoshimoto (Kyoto Institute of Technology, Japan)
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen
Marko Tadjer, Andrew Koehler and Jaime Freitas Jr (Naval Research Laboratory, USA); Matty Specht (American Society for Engineering Education, USA); Karl Hobart, Evan Glaser, Travis Anderson and Fritz Kub (Naval Research Laboratory, USA); Akito Kuramata (Tamura Corporation, Japan)
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces
Brian M. Foley, Samuel Kim, Luke Yates and Zhe Cheng (Georgia Institute of Technology, USA); Samuel Graham, Jr (Georgia Institute of Technology & Oak Ridge National Laboratory, USA)
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms
Tsung-Han Yang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Xuanqi Huang, Hong Chen, Jossue Montes, Izak Baranowski and Kai Fu (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy
Akhil Mauze (University of California, Santa Barbara, USA); James Speck (UCSB, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); Thomas Mates (University of California, USA)
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates
Kazuaki Akaiwa, Katsuya Ohta, Takahito Sekiyama and Tomoki Abe (Tottori University, Japan); Takashi Shinohe (FLOSFIA INC., Japan); Kunio Ichino (Tottori University, Japan)
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array
Munho Kim and Hsien-Chih Huang (University of Illinois, USA); Kelson Chabak (Air Force Research Laboratory, USA); Xiuling Li (University of Illinois, USA)
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices
Andrew Green (United States Air Force & KBRwyle, USA); Kelson Chabak and Michael Schuette (Air Force Research Laboratory, USA); Günter Wagner (Leibniz Institute for Crystal Growth - IKZ, Germany); Dennis Walker, Kevin Leedy and Antonio Crespo (Air Force Research Laboratory, USA); Miles Lindquist (Air Force Research Laboratory, KBRwyle, USA); Gregg Jessen (Air Force Research Laboratory, USA)

Friday, June 1 10:00 - 10:30

FrCB1: Coffee Break

Friday, June 1 10:30 - 12:30

Fr2A7: Photonics

Room: Salon M
Chair: Shui-Qing Yu (University of Arkansas, USA)
10:30 [Invited] THz Difference-Frequency Generation in Quantum Cascade Lasers on Silicon
Mikhail Belkin (The University of Texas at Austin, USA)
11:00 Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication
Morteza Monavarian (Center for High Technology Materials, The University of New Mexico, USA); Arman Rashidi, Andrew Aragon and Ashwin Rishinaramangalam (Center for High Technology Materials, University of New Mexico, USA); Sang Ho Oh (University of California, Santa Barbara, USA); Steven DenBaars (University of California, Santa Barbara); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
11:15 Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology
Akhil Ajay (CEA-Grenoble, France); Rodrigo Blasco (Univesidad de Alcala, Spain); Jakub Polaczynski, Maria Spies and Martien den-Hertog (CNRS-Insititute Neel, France); Eva Monroy (CEA-Grenoble, France)
11:30 Thermal Reliability Analysis of InGaN Solar Cells
Xuanqi Huang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Hong Chen, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Brendan Gunning and Dan Koleske (Sandia National Laboratories, USA); Yuji Zhao (Arizona state University, USA)
11:45 Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices
Carlo De Santi, Matteo Meneghini, Alessandro Caria and Nicola Renso (University of Padova, Italy); Ezgi Dogmus (IEMN-CNRS Lille, Italy); Malek Zegaoui (IEMN-CNRS, France); Farid Medjdoub (Institute of Electronics, Microelectronics and Nanotechnology, France); Enrico Zanoni (DEI, Italy); Gaudenzio Meneghesso (University of Padova, Italy)
12:00 [Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform
Philippe Boucaud (CNRS-CRHEA, France); Farsane Tabataba-Vakili (C2N, France); Laetitia Doyennette (L2C, France); Christelle Brimont and Thierry Guillet (Laboratoire Charles Coulomb (L2C), CNRS-University Montpellier 2, France); Stephanie Rennesson (Université Côte d'Azur, CRHEA-CNRS, France); Eric Frayssinet, Benjamin Damilano, Jean-Yves Duboz and Fabrice Semond (CRHEA-CNRS, France); Moustafa El Kurdi (C2N-Univ Paris Sud, France); Sébastien Sauvage (C2N-CNRS, France); Xavier Checoury (CNRS Univ Paris Sud 11, France); Bruno Gayral (CEA-CNRS, INAC-SP2M, CEA Grenoble, France)

Fr2B7: Nanostructures

Room: DR 3&4
Chair: Cezar Zota (IBM Research Zurich, Switzerland)
10:30 Scaling Effect on Vertical FETs Using III-V Nanowire-Channels
Katsuhiro Tomioka (Hokkaido University & GS-IST and RCIQE, Japan); Hironori Gamou (Hokkaido University, Japan); Akinobu Yoshida (Hokkaido Univerisy, Japan); Junichi Motohisa (Hokkaido University, Japan)
10:45 Multi-nanowire In-Plane-Gate Field Effect Transistors
Giovanni Santoruvo (Ecole Polytechnique Federale de Lausanne, Switzerland); Elison Matioli (EPFL, Switzerland)
11:00 Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer
Wei Jen Hsueh, Jin-Yang Chen, Cheng Yu Chen, Andrey Katkov and Jen-Inn Chyi (National Central University, Taiwan)
11:15 [Invited] III-V Nanowire MOSFETs: A Path Towards 10 nm High-Performance Transistors
Lars-Erik Wernersson (Lund University, Sweden)
11:45 GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting
Tsuyoshi Takahashi (Fujitsu Laboratories Ltd., Japan); Kenichi Kawaguchi (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Masaru Sato (Fujitsu Laboratories Ltd., Japan); Naoya Okamoto (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Michihiko Suhara (Tokyo Metropolitan University, Japan)
12:00 Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Isabel Harrysson Rodrigues (Chalmers University of Technology, Sweden); Arsalan Pourkabirian, Giuseppe Moschetti and Joel Schleeh (Low Noise Factory AB, Sweden); Per-Åke Nilsson (Chalmers University of Technology, Sweden); Jan Grahn (Chalmers University of Thechnology, Sweden)
12:15 Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD
Simone Tommaso Suran Brunelli (University of California, Santa Barbara, USA); Brian Markman, Jun Wu, Hsing Ying Tseng and Aranya Goswami (UCSB, USA); Chris Palmstrom (University of California Santa Barbara, USA); Mark J W Rodwell (University of California, Santa Barbara, USA); Jonathan Klamkin (University of California Santa Barbara, USA)

Fr2F1: Ga2O3 Keynotes

Room: DR 5&6
Chair: Shizuo Fujita (Kyoto University, Japan)
10:30 Introduction of Gallium Oxide Technologies
Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)
10:45 [Invited] Development of (AlxGa1-x)2O3/Ga2O3 Heterostructures and Devices
James Speck (University of California, Santa Barbara, USA)
11:20 [Invited] Development of Halide Vapor Phase Epitaxy of Ga2O3 for Power Device Applications
Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
11:55 [Invited] Material and Device Engineering for Gallium Oxide Field Effect Transistors
Siddharth Rajan (The Ohio State University, USA)

Friday, June 1 12:30 - 1:30

FrLB: Lunch Break

Friday, June 1 1:30 - 3:00

Fr3A8: Photonics

Room: Salon M
Chair: Mikhail Belkin (The University of Texas at Austin, USA)
1:30 [Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth
Amy W. K. Liu (IQE Inc., USA); Dmitri Loubychev and Joel Fastenau (IQE Inc, USA); Aled Morgan and Stuart Edwards (IQE Silicon, United Kingdom (Great Britain)); Matthew Fetters, Hubert Krysiak, Joe Zeng, Michael Kattner, Phil Frey and Scott Nelson (IQE Inc., USA); Rowel Go, Pedro Figueiredo, Matthew Suttinger and Arkadiy Lyakh (University of Central Florida, USA)
2:00 High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy
Zhao Yan (The Hong Kong University of Science and Technology, Hong Kong); Yu Han and Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:15 GaSb Based Materials and Devices Epitaxially Grown onto Silicon
Evangelia Delli, Peter Hodgson, Eva Repiso, Jonathan Hayton and Adam Craig (Lancaster University, United Kingdom (Great Britain)); Richard Beanland (University of Warwick, United Kingdom (Great Britain)); Andrew R J Marshall, Anthony Krier and Peter Carrington (Lancaster University, United Kingdom (Great Britain))
2:30 Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD
Ludovico Megalini (UCSB, USA); Simone Tommaso Suran Brunelli (University of California, Santa Barbara, USA); Aidan Taylor (UCSB, USA); William Charles (SUNY Polytechnic Institute, USA); Brandon Isaac (University of California, Santa Barbara, USA); John E Bowers (University of California, USA); Jonathan Klamkin (University of California Santa Barbara, USA)
2:45 High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems
Takuya Okimoto (Sumitomo Electric Device Innovations, Inc., Japan); Hideki Yagi (Sumitomo Electric Industries, LTD., Japan); Satoru Okamoto, Kenji Sakurai, Koji Ebihara, Kouichiro Yamazaki, Yoshifumi Nishimoto, Kazuhiko Horino, Tatsuya Takeuchi and Yasuo Yamasaki (Sumitomo Electric Device Innovations, Inc., Japan); Mitsuru Ekawa (Sumitomo Electric Industries, Ltd., Japan); Yoshihiro Yoneda (Sumitomo Electric Device Innovations, Inc., Japan)

Fr3B8: Nanostructures

Room: DR 3&4
Chair: Katsuhiro Tomioka (Hokkaido University, Japan)
1:30 Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure
Dingding Ren (Norwegian University of Science and Technology, Norway); Lyubomir Ahtapodov and Julie Nilsen (NTNU, Norway); Jianfeng Yang (University of New South Wales, Australia); Anders Gustafsson (Lund University, Sweden); Junghwan Huh (NTNU, Norway); Gavin Conibeer (UNSW Australia, Australia); Antonius van Helvoort (NTNU, Norway); Bjørn-Ove Fimland and Helge Weman (Norwegian University of Science and Technology, Norway)
1:45 Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness
Kar Wei Ng (University of Macau, Macao); Jonas Kapraun, Fabian Schuster and Connie J. Chang-Hasnain (University of California Berkeley, USA)
2:00 [Invited] Self-assembled InGaAs Quantum Dots for Quantum Nanophotonics
Allan Bracker (Naval Research Lab, USA)
2:30 High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band
Toshimasa Umezawa (National Institute of Information and Communication Technology (NICT), Japan); Kouichi Akahane, Atsushi Matsumoto, Atsushi Kanno and Naokatsu Yamamoto (National Institute of Information and Communications Technology, Japan)
2:45 Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy
Zon Zon, Pakawat Phienlumlert and Supachok Thainoi (Chulalongkorn University, Thailand); Suwit Kiravittaya (Naresuan University, Thailand); Aniwat Tandaechanurat (International School of Engineering (ISE), Chulalongkorn University, Thailand); Noppadon Nuntawong (NECTEC, Thailand); Suwat Sopitpan (Thai Microelectronics Center (TMEC), Thailand); Visittapong Yordsri (National Metal and Materials Technology Center, Thailand); Chanchana Thanachayanont (National Metal and Material Technology Center, Thailand); Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow (Chulalongkorn University, Thailand); Yasutomo Ota (The University of Tokyo, Japan); Satoshi Iwamoto and Yasuhiko Arakawa (University of Tokyo, Japan)

Fr3C7: Novel Materials & Characterization

Room: Salon T
Chair: Asif Khan (Georgia Institute of Technology, USA)
1:30 [Invited] Liquid-Solid Interface as Crystal Growth Front
Masamitu Takahasi (National Institutes for Quantum and Radiological Science and Technology, Japan)
2:00 Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy
Sarah McKibbin, Johan Knutsson, James Webb, Olof Persson, Martin Hjort, Sebastian Lehmann, Kimberly A. Dick, Anders Mikkelsen and Rainer Timm (Lund University, Sweden)
2:15 Characterization of Epilayer Transfer by Colored Picosecond Acoustics
Arnaud Devos (IEMN CNRS, France); Patrick Emery (MENAPiC, France)
2:30 [Invited] Total Tomography of Nonplanar InGaAs Quantum Wells on GaAs Nanowires
Lincoln Lauhon (Northwestern University, USA)

Fr3F2: Ga2O3 Growth and Characterization

Room: DR 5&6
Chair: Siddharth Rajan (The Ohio State University, USA)
1:30 Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film
Piero Mazzolini, Patrick Vogt, Zongzhe Cheng and Michael Hanke (Paul-Drude-Institut für Festkörperelektronik, Germany); Robert Schewski (Leibniz Institute for Crystal Growth - IKZ, Germany); Charlotte Wouters (Leibniz Institute of Crystal Growth, Germany); Martin Albrecht (Leibniz Institute for Crystal Growth - IKZ, Germany); Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Germany)
1:45 Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD
Haiding Sun, Kuang-Hui Li and Carlos Torres-Castanedo (KAUST, Saudi Arabia); Serdal Okur, Gary Tompa and Tom Salagaj (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
2:00 [Invited] Growth, Doping and Defects of Homoepitaxial β-Ga203 Grown by Metal Organic Vapor Phase Epitaxy
Martin Albrecht (Leibniz Institute for Crystal Growth - IKZ, Germany)
2:30 Electronic Raman Scattering in 𝛽-Ga2O3
Andreas Fiedler (Leibniz Institute for Crystal Growth - IKZ, Germany); Manfred Ramsteiner (Paul-Drude-Institut für Festkörperelektronik, Germany); Zbigniew Galazka and Klaus Irmscher (Leibniz Institute for Crystal Growth - IKZ, Germany)
2:45 Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping
Takeyoshi Onuma (Kogakuin University, Japan); Yoshiaki Nakata (National Institute of Information and Communications Technology, Japan); Kohei Sasaki (Novel Crystal Technology, Inc., Japan); Tatekazu Masui (Tamura Corporation, Japan); Tomohiro Yamaguchi (Kogakuin University); Tohru Honda (Kogakuin University, Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)

Friday, June 1 3:00 - 3:30

FrCB2: Coffee Break

Friday, June 1 3:30 - 5:45

Fr3A9: Photonics

Room: Salon M
Chair: Arkadiy Lyakh (University of Central Florida, USA)
3:30 [Invited] Silicon Photonics, Optical Phased Arrays, and LiDAR
Michael Watts (MIT, USA)
4:00 Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA
Yota Akashi, Shin'e Matsui and Shohei Isawa (Waseda University, Japan); Atsushi Matsumoto (National Institute of Information and Communications Technology, Japan); Yuichi Matsushima (Waseda University, Japan); Hiroshi Ishikawa (Waseda University); Katsuyuki Utaka (Waseda University, Japan)
4:15 Optical NAND Logic Gates Using Light Emitting Transistor (LET)
Chi-Wei Wang (National Taiwan University, Taiwan)
4:30 [Invited] Heterogeneous Integration for On-Chip Quantum Photonics with Single InAs Quantum Dots
Marcelo Davanco (NIST, USA)
5:00 Incorporation of InGaAlAs Electroabsorption Modulated Lasers in a Generic InP Photonic Integrated Circuits Platform
Norbert Grote (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Germany)
5:15 Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers
Takumi Endo, Shin-ichi Domoto, Toru Uchida, Masami Ishiura, Ikuo Hanawa, Daisei Shoji, Yoshihiro Yoneda and Atsushi Yasaki (Sumitomo Electric Device Innovations, Inc., Japan)
5:30 Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays
Mohamed Diagne, Richard Younger, Joseph Donnelly, Robert Bailey, William Goodhue, Michael Myszka, K. McIntosh and Erik Duerr (MIT Lincoln Laboratory, USA)

Fr3B9: Nanostructures

Room: DR 3&4
Chair: Allan Bracker (Naval Research Lab, USA)
3:30 Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation
Frank Bertram and Jürgen Christen (Otto von Guericke University Magdeburg, Germany); Gordon Schmidt (Otto-von-Guericke-University Magdeburg, Germany); Armin Dadgar (Universität Magdeburg, Germany); André Strittmatter (OvGU, Germany); Christoph Berger (University of Magdeburg, Germany); Jürgen Bläsing (OvGU, Germany); Peter Veit (Otto von Guericke University Magdeburg, Germany); Hannes Schürmann (University of Magdeburg, Germany); Sebastian Metzner (Otto von Guericke University Magdeburg, Germany)
3:45 Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry
Gabriele Calabrese (Paul-Drude-Institut für Festkörperelektronik, Germany); Pierre Corfdir (Paul-Drude-Institut, Germany); Apurba Laha (Indian Institute of Technology Bombay, India); Thomas Auzelle, Lutz Geelhaar, Oliver Brandt and Sergio Fernández-Garrido (Paul-Drude-Institut für Festkörperelektronik, Germany)
4:00 [Invited] MBE Growth of GaAs Nanowires Observed in Situ by TEM
Jean-Christophe Harmand (Centre de Nanosciences et de Nanotechnologies, CNRS & Université Paris-Saclay, France)
4:30 Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques
Blair C Connelly, Chad S Gallinat and Michael Wraback (US Army Research Laboratory, USA)
4:45 THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials
Chan-Shan Yang (National Taiwan Normal University, Taiwan); Tzu-Yuan Huang (National Tsing Hua University, Taiwan); Lung-Hsing Hsu, Tsung-Sheng Kao, Chien-Chung Lin and Hao-Chung Kuo (National Chiao Tung University, Taiwan); Osamu Wada (Kobe University, Japan); Ming-Chang Chou and Wai-Keung Lau (National Synchrotron Radiation Research Center, Taiwan); C. L. Pan (National Tsing Hua University, Taiwan)
5:00 Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires
Lisa M Liborius, Khaled Arzi, Claudia Speich, Werner Prost, Franz-Josef Tegude, Artur Poloczek and Nils Weimann (University of Duisburg-Essen, Germany)
5:15 Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs
Tetsuya Suemitsu (Tohoku University, Japan); Kiattiwut Prasertsuk (Institute for Materials Research, Tohoku University & Thai Microelectronics Center (TMEC), Japan); Tomoyuki Tanikawa (Institute for Materials Research, Tohoku University, Japan); Takeshi Kimura and Shigeyuki Kuboya (Tohoku University, Japan); Takashi Matsuoka (Institute for Materials Research, Tohoku University, Japan)
5:30 200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene
Jeffrey LaRoche, Kelly Ip and Theodore Kennedy (Raytheon, USA); Lovelace Soirez (Skorpios, USA); Charles Wang, Azin Zarrasvand, Emily O'neill, William Davis, Clay Long, Eduardo Chumbes, Matthew Walsh, John Bettencourt and Kyle Richard (Raytheon, USA); Tina Trimble (Skorpios, USA); Thomas Kazior (Raytheon, USA)

Fr3C8: Novel Materials & Devices

Room: Salon T
Chair: Lincoln Lauhon (Northwestern University, USA)
3:30 [Invited] Negative Capacitance Transistors: Physics, Materials and the State-of-Art
Asif Khan (Georgia Institute of Technology, USA)
4:00 Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack
Ahmad Zubair, Amirhasan Nourbakhsh, Mark Theng and Tomas Palacios (Massachusetts Institute of Technology, USA)
4:15 Band Gap Tuning Across the Visible Spectrum Without Alloying
Robert Makin III and Krystal York (Western Michigan University, USA); Nancy Senabulya, James Mathis and Roy Clarke (University of Michigan, USA); Nathaniel Feldberg and Patrice Miska (Universite de Lorraine, France); Christina Jones, Logan Williams and Emmanouil Kioupakis (University of Michigan, USA); Roger Reeves (University of Canterbury, New Zealand); Steve Durbin (Western Michigan University, USA)
4:30 [Invited] Topological Spintronic Devices
Nitin Samarth (The Pennsylvania State University, USA)
5:00 Silicene-on-silicide Platform
Cameron Volders, Anna Costine and Petra Reinke (University of Virginia, USA)

Fr3F3: Ga2O3 Characterization & Devices

Room: DR 5&6
Chair: Gregg Jessen (Air Force Research Laboratory, USA)
3:30 Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3
Okan Koksal and Farhan Rana (Cornell University, USA); Jared Strait (NIST, USA); Nicholas Tanen, Debdeep Jena and Huili Xing (Cornell University, USA)
3:45 Electronic Transport of Donors and Acceptors in β-Ga2O3
Shin Mou and Adam Neal (Air Force Research Laboratory, USA); Subrina Rafique (Case Western Reserve University, USA); Hongping Zhao (Ohio State University, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); James Speck (UCSB, USA); Darren Thomson, Neil Moser, John Blevins, Kelson Chabak and Gregg Jessen (Air Force Research Laboratory, USA)
4:00 Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs
Joe McGlone, Zhanbo Xia, Chandan Joishi and Siddharth Rajan (The Ohio State University, USA); Steven Ringel (the Ohio State University, USA); Aaron Arehart (The Ohio State University, USA)
4:15 Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation
Manikant Singh, James Pomeroy, Callum Middleton and Michael J Uren (University of Bristol, United Kingdom (Great Britain)); Michael Casbon and Paul J Tasker (Cardiff University, United Kingdom (Great Britain)); Man Hoi Wong (National Institute of Information and Communications Technology, Japan); Kohei Sasaki (Novel Crystal Technology, Inc., Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan); Martin Kuball (University of Bristol, United Kingdom (Great Britain))
4:30 Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors
Wenshen Li, Zongyang Hu, Zexuan Zhang, Kazuki Nomoto and Nicholas Tanen (Cornell University, USA); Kohei Sasaki and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Tohru Nakamura (Hosei University, Japan); Debdeep Jena and Huili Xing (Cornell University, USA)
4:45 P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide
Andrew Koehler and Marko Tadjer (Naval Research Laboratory, USA); James Gallagher (ASEE Postdoctoral Fellow Residing at Naval Research Laboratory, USA); Glenn Jernigan, Karl Hobart and Fritz Kub (Naval Research Laboratory, USA)
5:00 [Invited] Ga2O3 Vertical Trench SBDs and FETs
Kohei Sasaki, Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Akio Takatsuka and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Shigenobu Yamakoshi (Novel Crystal Technology, Inc.)

Friday, June 1 5:45 - 6:15

F4CC: Closing Ceremony

Room: Salon M.I.T.