β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate 1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates 1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET 1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array 2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture 200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene 3.3-mΩ·cm2 GaN-based Vertical Trench MOSFET with Threshold Voltage Reaching 6.2 V 3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects 3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications 40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz A First Principles Approach on the Possibility of P-Type Ga2O3 A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs AlGaN/GaN HEMTs with Reduced Self-Heating AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect All Exciplex Structure of Highly Efficient Tandem WOLEDs Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications Analog Arrays and Algorithms Analysis of Composition Profiles and Strain Across Heterovalent Non-Common-Atom CdTe/InSb Interfaces Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells Band Gap Tuning Across the Visible Spectrum Without Alloying Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods Characterization of Epilayer Transfer by Colored Picosecond Acoustics Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon Defect Control in GaN-on-Si Wafers for Power Electronics Applications Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3 Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides Development of 25 GHz InGaAs/InP P-I-N Photodetectors for High Speed Optical Communications Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width Doping Engineering of Extended Wavelength InGaAs Photodetectors Droplet Epitaxy of in/algaas Nanostructures Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons Effect of Schottky Interfaces in Yttria Based Memristive Devices Efficient Learning with Ultra-low Power Compound Synaptic Devices Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds Electrical and Optical Properties of Heavily Ge-Doped AlGaN Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer Electronic Raman Scattering in 𝛽-Ga2O3 Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures Electronic Transport of Donors and Acceptors in β-Ga2O3 Enhanced Deep Ultraviolet Response of SiC APDs Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition Europium Doped GaN Nanocolumn Light-Emitting Diodes Exhibiting High Emission-Wavelength Stability Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices Evolution of Material Systems for THz Quantum Cascade Lasers Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region Extreme-high-temperature MOVPE Design and Practice for Nitrides Fabrication of InGaAs Nanosheet Transistors with Regrown Source Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers FastHall™: A Method to Measure Low Mobility Materials for Multi-Carrier Analysis Fin-Width Scaling of Highly-Doped InGaAs Fins First Demonstration of InGaAs FinFETs on Si for RF Applications Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes GaN Junction Barrier Schottky Diodes by Selective Ion Implantation Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology GaSb Based Materials and Devices Epitaxially Grown onto Silicon GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling Graphene-Metal Contact Optimization for Ballistic RF Transistor Application Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays Growth and Material Characterizations of Type-II InAs/GaSb Superlattice Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy Growth of Molecularly Doped Organic Single Crystal by a Novel Method Using Electrospray and Low Vapor Pressure Solvent Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate High Performance 820V GaN-on-Si PiN Diodes High Power mmW Switch Technologies High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy High Speed GaN-based micro-LED Arrays for Visible Light Communication High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers HSQ Etching Resistance Dependence on Substrate Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides Impact of Traps on RF HEMT Linearity Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors In-situ and Ex-Situ Metrology for VCSEL Epitaxy In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range Incorporation of InGaAlAs Electroabsorption Modulated Lasers in a Generic InP Photonic Integrated Circuits Platform Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV InSe Metal Contact Optimization for Enhanced InSe FET Performance Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region Interplay Between Fabry-Pérot Resonance and Disorder Effect in Middle Mobility Quantum Point Contacts Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques Introduction Introduction of Gallium Oxide Technologies Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications Investigations of Light Polarization of GaAs/AlGaOx Nanowire [Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors [Invited] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges [Invited] Development of (AlxGa1-x)2O3/Ga2O3 Heterostructures and Devices [Invited] Development of Halide Vapor Phase Epitaxy of Ga2O3 for Power Device Applications [Invited] Development of Si-based GeSn Laser [Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials [Invited] Electrically-Injected GaN-based VCSELs [Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs [Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing [Invited] Ga2O3 Vertical Trench SBDs and FETs [Invited] GaN-on-Si Laser Diodes and Normally-Off HEMTs [Invited] Growth and Electronic Properties of Heusler Epitaxial Thin Films [Invited] Growth, Doping and Defects of Homoepitaxial β-Ga203 Grown by Metal Organic Vapor Phase Epitaxy [Invited] Heterogeneous Integration for On-Chip Quantum Photonics with Single InAs Quantum Dots [Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth [Invited] Heterostructures of Narrow-Gap Semiconductor and Superconductors for Quantum Information Applications [Invited] High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides [Invited] High-Contrast Gratings in VCSELs [Invited] High-quality Growth of Chalcogenide Topological Insulators [Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform [Invited] III-Nitride Nanostructures Grown by MBE: Basics and Applications [Invited] III-V CMOS: Quo Vadis? [Invited] III-V Nanowire MOSFETs: A Path Towards 10 nm High-Performance Transistors [Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors [Invited] Liquid-Solid Interface as Crystal Growth Front [Invited] Material and Device Engineering for Gallium Oxide Field Effect Transistors [Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers [Invited] MBE Growth of GaAs Nanowires Observed in Situ by TEM [Invited] Microstructure and Morphology Measurements for Organic Electronics [Invited] Mid-Infrared Quantum Cascade Lasers and Applications [Invited] Mm-wave/THz Multi-Gigabit Wireless Links and Microwave Interfaces - The iBROW Project [Invited] Negative Capacitance Transistors: Physics, Materials and the State-of-Art [Invited] Pathways to Low Energy Control of Magnetism Using Multiferroics [Invited] Placeholder Title [Invited] Quantum Cascade Lasers on Metamorphic Buffer Layer [Invited] Quantum-Dot Lasers on Silicon [Invited] RS-PbTe/ZB-CdTe (111) Heterostructure an Inter-Diffusion Free Interface with a High Mobility Two-Dimensional Electron Gas (2DEG) Showing Quantum Oscillations [Invited] Sb-based IR Detector and Emitter Materials [Invited] Self-assembled InGaAs Quantum Dots for Quantum Nanophotonics [Invited] Silicon Photonics, Optical Phased Arrays, and LiDAR [Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz [Invited] THz Difference-Frequency Generation in Quantum Cascade Lasers on Silicon [Invited] Topological Spintronic Devices [Invited] Total Tomography of Nonplanar InGaAs Quantum Wells on GaAs Nanowires [Invited] Transition Metal Dichalcogenide Memristors and Memtransistors Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region Light Extraction Enhancement of AlGaInP LED by Etching Process Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering Magnetic Influence on Cryogenic InP HEMT DC Characteristics Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy Materials for Neuromorphic Computing MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP Mg Recoil Implantation into GaN with Incident Nitrogen Ion Miscibility and Phase Separation in (InxGa1-x)2O3 Mobility Extraction in Thin-Channel InGaAs MOSFETs MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED MOCVD-grown BAlN-contained Heterojunctions Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys Modeling the Parasitic Bipolar Effect in InGaAs FinFETs Molecular Beam Epitaxial Growth of GaInNAs Nanowires Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC Multi-nanowire In-Plane-Gate Field Effect Transistors Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack Neuromorphic Computing with Memristive Devices and Arrays Nitrogen-face AlN-based Field-Effect Transistors Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 On the Large Signal Modeling of MM-wave GaAs PIN Diodes Optical Absorption and Passivation of Surface States in III-nitride Photonics Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap Optical NAND Logic Gates Using Light Emitting Transistor (LET) Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD Phase Transition Temperatures of α-Ga2O3 on Sapphire Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator Scaling Effect on Vertical FETs Using III-V Nanowire-Channels Scaling of GaN HEMTs Thermal Transient Characteristics Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition Semiconductors at the Frontiers of Quantum Technologies Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si Sidewall Roughness Atomic Force Microscopy Characterization of Deep Etched InP/〖Al〗_x 〖Ga〗_(1-x) 〖In〗_y 〖As〗_(1-y) Structures Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method Silicene-on-silicide Platform Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate Sputtering Epitaxial Growth of III Nitrides and Its Device Applications Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers Structural Characteristics of GaAs/GaAsBi Nanowires Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix Substrate-transferred Crystalline Coatings Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation The Physics of AI and Quantum Computing The Role of Higher Order Effects in Rubrene/C60 OLEDs Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001) Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices Thermal Reliability Analysis of InGaN Solar Cells Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement This Paper is Another Test Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires Towards the Monolithic Integration of GaSb Solar Cells on Si Transistors: mm-Wave and Low-Power VLSI Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process Welcome Remarks Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes |
