Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X
Βtop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector

β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate

1top Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates

1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET

1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array

2top Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture

200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene

3top Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

3.3-mΩ·cm2 GaN-based Vertical Trench MOSFET with Threshold Voltage Reaching 6.2 V

3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects

3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications

4top Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz

Atop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

A First Principles Approach on the Possibility of P-Type Ga2O3

A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity

A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry

A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates

A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs

Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs

AlGaN/GaN HEMTs with Reduced Self-Heating

AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect

All Exciplex Structure of Highly Efficient Tandem WOLEDs

Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer

AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model

An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications

Analog Arrays and Algorithms

Analysis of Composition Profiles and Strain Across Heterovalent Non-Common-Atom CdTe/InSb Interfaces

Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology

Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR)

Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates

Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate

Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy

Btop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells

Band Gap Tuning Across the Visible Spectrum Without Alloying

Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer

Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping

Ctop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs

Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams

Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz

Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods

Characterization of Epilayer Transfer by Colored Picosecond Acoustics

Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen

Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes

Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm

Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs

Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films

Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering

Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating

Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs

Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films

Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays

Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces

Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub

Dtop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon

Defect Control in GaN-on-Si Wafers for Power Electronics Applications

Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD

Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA

Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3

Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence

Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides

Development of 25 GHz InGaAs/InP P-I-N Photodetectors for High Speed Optical Communications

Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel

Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width

Doping Engineering of Extended Wavelength InGaAs Photodetectors

Droplet Epitaxy of in/algaas Nanostructures

Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior

Etop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation

Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons

Effect of Schottky Interfaces in Yttria Based Memristive Devices

Efficient Learning with Ultra-low Power Compound Synaptic Devices

Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds

Electrical and Optical Properties of Heavily Ge-Doped AlGaN

Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates

Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer

Electronic Raman Scattering in 𝛽-Ga2O3

Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory

Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures

Electronic Transport of Donors and Acceptors in β-Ga2O3

Enhanced Deep Ultraviolet Response of SiC APDs

Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots

Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V

Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition

Europium Doped GaN Nanocolumn Light-Emitting Diodes Exhibiting High Emission-Wavelength Stability

Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation

Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices

Evolution of Material Systems for THz Quantum Cascade Lasers

Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region

Extreme-high-temperature MOVPE Design and Practice for Nitrides

Ftop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Fabrication of InGaAs Nanosheet Transistors with Regrown Source

Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN

Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film

Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers

FastHall™: A Method to Measure Low Mobility Materials for Multi-Carrier Analysis

Fin-Width Scaling of Highly-Doped InGaAs Fins

First Demonstration of InGaAs FinFETs on Si for RF Applications

Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness

Gtop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer

Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties

GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting

Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes

GaN Junction Barrier Schottky Diodes by Selective Ion Implantation

Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology

GaSb Based Materials and Devices Epitaxially Grown onto Silicon

GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes

GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication

Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling

Graphene-Metal Contact Optimization for Ballistic RF Transistor Application

Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays

Growth and Material Characterizations of Type-II InAs/GaSb Superlattice

Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy

Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition

Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent

Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer

Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy

Growth of Molecularly Doped Organic Single Crystal by a Novel Method Using Electrospray and Low Vapor Pressure Solvent

Htop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples

High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure

High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate

High Performance 820V GaN-on-Si PiN Diodes

High Power mmW Switch Technologies

High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application

High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers

High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing

High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology

High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy

High Speed GaN-based micro-LED Arrays for Visible Light Communication

High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate

High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band

High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes

High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems

High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation

High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates

High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN

Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers

HSQ Etching Resistance Dependence on Substrate

Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting

Itop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers

Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes

Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots

Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides

Impact of Traps on RF HEMT Linearity

Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel

Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants

In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors

In-situ and Ex-Situ Metrology for VCSEL Epitaxy

In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD

InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range

Incorporation of InGaAlAs Electroabsorption Modulated Lasers in a Generic InP Photonic Integrated Circuits Platform

Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs

Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers

Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si

Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation

InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band

InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV

InSe Metal Contact Optimization for Enhanced InSe FET Performance

Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region

Interplay Between Fabry-Pérot Resonance and Disorder Effect in Middle Mobility Quantum Point Contacts

Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques


Introduction of Gallium Oxide Technologies

Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser

Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing

Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD

Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs

Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods

Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications

Investigations of Light Polarization of GaAs/AlGaOx Nanowire

[Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors

[Invited] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

[Invited] Development of (AlxGa1-x)2O3/Ga2O3 Heterostructures and Devices

[Invited] Development of Halide Vapor Phase Epitaxy of Ga2O3 for Power Device Applications

[Invited] Development of Si-based GeSn Laser

[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials

[Invited] Electrically-Injected GaN-based VCSELs

[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs

[Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing

[Invited] Ga2O3 Vertical Trench SBDs and FETs

[Invited] GaN-on-Si Laser Diodes and Normally-Off HEMTs

[Invited] Growth and Electronic Properties of Heusler Epitaxial Thin Films

[Invited] Growth, Doping and Defects of Homoepitaxial β-Ga203 Grown by Metal Organic Vapor Phase Epitaxy

[Invited] Heterogeneous Integration for On-Chip Quantum Photonics with Single InAs Quantum Dots

[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth

[Invited] Heterostructures of Narrow-Gap Semiconductor and Superconductors for Quantum Information Applications

[Invited] High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides

[Invited] High-Contrast Gratings in VCSELs

[Invited] High-quality Growth of Chalcogenide Topological Insulators

[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform

[Invited] III-Nitride Nanostructures Grown by MBE: Basics and Applications

[Invited] III-V CMOS: Quo Vadis?

[Invited] III-V Nanowire MOSFETs: A Path Towards 10 nm High-Performance Transistors

[Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors

[Invited] Liquid-Solid Interface as Crystal Growth Front

[Invited] Material and Device Engineering for Gallium Oxide Field Effect Transistors

[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers

[Invited] MBE Growth of GaAs Nanowires Observed in Situ by TEM

[Invited] Microstructure and Morphology Measurements for Organic Electronics

[Invited] Mid-Infrared Quantum Cascade Lasers and Applications

[Invited] Mm-wave/THz Multi-Gigabit Wireless Links and Microwave Interfaces - The iBROW Project

[Invited] Negative Capacitance Transistors: Physics, Materials and the State-of-Art

[Invited] Pathways to Low Energy Control of Magnetism Using Multiferroics

[Invited] Placeholder Title

[Invited] Quantum Cascade Lasers on Metamorphic Buffer Layer

[Invited] Quantum-Dot Lasers on Silicon

[Invited] RS-PbTe/ZB-CdTe (111) Heterostructure an Inter-Diffusion Free Interface with a High Mobility Two-Dimensional Electron Gas (2DEG) Showing Quantum Oscillations

[Invited] Sb-based IR Detector and Emitter Materials

[Invited] Self-assembled InGaAs Quantum Dots for Quantum Nanophotonics

[Invited] Silicon Photonics, Optical Phased Arrays, and LiDAR

[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz

[Invited] THz Difference-Frequency Generation in Quantum Cascade Lasers on Silicon

[Invited] Topological Spintronic Devices

[Invited] Total Tomography of Nonplanar InGaAs Quantum Wells on GaAs Nanowires

[Invited] Transition Metal Dichalcogenide Memristors and Memtransistors

Ltop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region

Light Extraction Enhancement of AlGaInP LED by Etching Process

Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications

Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures

Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering

Mtop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy

Materials for Neuromorphic Computing

MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates

Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates

Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array

Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP

Mg Recoil Implantation into GaN with Incident Nitrogen Ion

Miscibility and Phase Separation in (InxGa1-x)2O3

Mobility Extraction in Thin-Channel InGaAs MOSFETs

MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED

MOCVD-grown BAlN-contained Heterojunctions

Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys

Modeling the Parasitic Bipolar Effect in InGaAs FinFETs

Molecular Beam Epitaxial Growth of GaInNAs Nanowires

Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures

Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry

Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures

MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC

Multi-nanowire In-Plane-Gate Field Effect Transistors

Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission

Ntop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias

N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers

Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation

Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires

Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack

Neuromorphic Computing with Memristive Devices and Arrays

Nitrogen-face AlN-based Field-Effect Transistors

Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer

Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation

Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment

Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3

Otop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

On the Large Signal Modeling of MM-wave GaAs PIN Diodes

Optical Absorption and Passivation of Surface States in III-nitride Photonics

Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy

Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap

Optical NAND Logic Gates Using Light Emitting Transistor (LET)

Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6

Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells

Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices

Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication

Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy

Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology

Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM

Ptop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide

Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD

Phase Transition Temperatures of α-Ga2O3 on Sapphire

Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency

Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC

Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors

Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth

Rtop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors

Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs

Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique

Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si

Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool

Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs

Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

Stop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Scaling Effect on Vertical FETs Using III-V Nanowire-Channels

Scaling of GaN HEMTs Thermal Transient Characteristics

Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition

Semiconductors at the Frontiers of Quantum Technologies

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Sidewall Roughness Atomic Force Microscopy Characterization of Deep Etched InP/〖Al〗_x 〖Ga〗_(1-x) 〖In〗_y 〖As〗_(1-y) Structures

Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method

Silicene-on-silicide Platform

Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device

Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism

Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide

Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure

Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm

SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate

Sputtering Epitaxial Growth of III Nitrides and Its Device Applications

Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors

STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers

Structural Characteristics of GaAs/GaAsBi Nanowires

Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact

Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix

Substrate-transferred Crystalline Coatings

Ttop Β 1 2 3 4 A B C D E F G H I L M N O P R S T U V W X

Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates

Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection

Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms

Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD

Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy

The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane

The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation

The Physics of AI and Quantum Computing

The Role of Higher Order Effects in Rubrene/C60 OLEDs

Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)

Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates

Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation

Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices

Thermal Reliability Analysis of InGaN Solar Cells

Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures

Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement

This Paper is Another Test

Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors

Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology

THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials

Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb

Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD

Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires

Towards the Monolithic Integration of GaSb Solar Cells on Si

Transistors: mm-Wave and Low-Power VLSI

Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs

Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection

Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications

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Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser

Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3

Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application

Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes

Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy

Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces

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Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy

Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si

Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device

Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode

Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process

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Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application

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X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power

X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes