| Author |
Session |
Start page |
Title |
| A A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| A. Dick, Kimberly |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Abate, Vincent |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Abdul Khadar, Riyaz Mohammed |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We3D3.6 |
|
Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode |
| Abe, Tomoki |
Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Abrutis, Adulfas |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Adcock-Smith, Echo |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Agarwal, Anchal |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Ageev, Oleg |
Fr15PP-NS.10 |
|
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates |
| Fr15PP-NS.11 |
|
Droplet Epitaxy of in/algaas Nanostructures |
| Ahmadi, Elaheh |
Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Fr1PP-Ga.16 |
|
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy |
| Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Ahtapodov, Lyubomir |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Aihara, Takuma |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Aizin, Gregory |
We5PP-RF.9 |
|
Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub |
| Ajay, Akhil |
We1B1.5 |
|
Electrical and Optical Properties of Heavily Ge-Doped AlGaN |
| Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| Akahane, Kouichi |
We5PP-L.2 |
|
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers |
| Fr3B8.4 |
|
High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band |
| Akaiwa, Kazuaki |
Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Akashi, Yota |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Akazawa, Masamichi |
We5PP-WBG.4 |
|
Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation |
| Akiyama, Koichi |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Akiyama, Toru |
Fr15PP-NS.21 |
|
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001) |
| Aktas, Ozgur |
We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Al-Khalidi, Abdullah |
We2C2.5 |
|
Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region |
| We5PP-Po.5 |
|
AlGaN/GaN HEMTs with Reduced Self-Heating |
| Alajlouni, Sami |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Albadri, Abdulrahman M. |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Albraithen, Hamad |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Albrecht, Martin |
Fr3F2.3 |
|
[Invited] Growth, Doping and Defects of Homoepitaxial β-Ga203 Grown by Metal Organic Vapor Phase Epitaxy |
| Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Alharbi, Khalid |
We2C2.5 |
|
Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region |
| Alhassan, Abdullah |
We2B2.4 |
|
Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs |
| Allemang, Christopher |
Th2D6.7 |
|
[Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors |
| Allerman, Andrew |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Almansouri, Ibraheem |
Fr15PP-No.6 |
|
InSe Metal Contact Optimization for Enhanced InSe FET Performance |
| Almogbel, Abdullah |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Alomari, Mohammed |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Alsalman, Hussain |
Th2C6.6 |
|
Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures |
| Alshahed, Muhammad |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| AlShehhi, Badreyya |
Fr15PP-No.6 |
|
InSe Metal Contact Optimization for Enhanced InSe FET Performance |
| Alvarez, José |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Alyamani, Ahmed Y. |
We2B2.4 |
|
Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs |
| We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Amano, Hiroshi |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Ambacher, Oliver |
We5PP-WBG.1 |
|
Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si |
| Amemiya, Tomohiro |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Anderson, Travis |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Ando, Yuto |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Andrews, Aaron |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Andrzejewski, Dominik |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Angelov, Iltcho |
We5PP-RF.1 |
|
On the Large Signal Modeling of MM-wave GaAs PIN Diodes |
| Aonuma, Ryosuke |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| Aragon, Andrew |
Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Arai, Shigehisa |
We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| We5PP-L.9 |
|
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications |
| We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Arakawa, Yasuhiko |
Th2A6.4 |
|
High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Arehart, Aaron |
Th1D5.1 |
|
Impact of Traps on RF HEMT Linearity |
| Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| Arkani, Reza |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Armitage, Rob |
Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Armstrong, Andrew |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Arzi, Khaled |
We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Asada, Masahiro |
We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| We5PP-RF.11 |
|
Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region |
| Asakawa, Kiyoto |
We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| We5PP-RF.18 |
|
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology |
| Aspelmeyer, Markus |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Auzelle, Thomas |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Azadani, Javad |
Th2C6.6 |
|
Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures |
| B A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Bacher, Gerd |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Bachmann, Dominic |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Bader, Samuel |
We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Bae, Chulsung |
Fr1PP-Ga.7 |
|
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector |
| Bai, Liu |
Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Bai, Tingyu |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Bailey, Robert |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Balakirev, Sergey |
Fr15PP-NS.10 |
|
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates |
| Fr15PP-NS.11 |
|
Droplet Epitaxy of in/algaas Nanostructures |
| Baranowski, Izak |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Barito, Adam |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Barron, Thierry |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Bartasyte, Ausrine |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Basceri, Cem |
We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Bashouti, Muhammad |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Baumgartner, Yannick |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Bautista, Nelly |
Fr15PP-No.13 |
|
Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples |
| Bayram, Can |
Th1B5.1 |
|
Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency |
| Beam, Edward |
We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Beanland, Richard |
Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Behzadirad, Mahmoud |
Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Belkin, Mikhail |
Fr2A7.1 |
|
[Invited] THz Difference-Frequency Generation in Quantum Cascade Lasers on Silicon |
| Bellotti, Enrico |
Th2D6.1 |
|
A First Principles Approach on the Possibility of P-Type Ga2O3 |
| Belmonte, Thierry |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Benkhelifa, Fouad |
We5PP-WBG.1 |
|
Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si |
| Berger, Christoph |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Bergsten, Johan |
Th1D5.2 |
|
Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs |
| Bergunde, Thomas |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Berner, Alex |
Fr15PP-No.8 |
|
Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application |
| Bertness, Kris |
Th2B6.4 |
|
STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers |
| Bertram, Frank |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Besançon, Claire |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Bescond, Marc |
We4A4.2 |
|
Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures |
| Bettencourt, John |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Bewley, William |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Bharadwaj, Shyam |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Bhardwaj, Ritesh |
We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| Bierwagen, Oliver |
Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Biswas, Mahitosh |
Fr15PP-NS.13 |
|
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix |
| Fr15PP-NS.14 |
|
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots |
| Bittle, Emily |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Blanchard, Paul |
Th2B6.4 |
|
STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers |
| Blank, Volker |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Blasco, Rodrigo |
We1B1.5 |
|
Electrical and Optical Properties of Heavily Ge-Doped AlGaN |
| Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| Bläsing, Jürgen |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Blevins, John |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Boles, Timothy |
We5PP-RF.4 |
|
High Power mmW Switch Technologies |
| Boone, François |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Boppel, Sebastian |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Boucaud, Philippe |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Bouchilaoun, Meriem |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We3D3.2 |
|
Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Boulet, Pascal |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Bowers, John |
We2A2.5 |
|
[Invited] Quantum-Dot Lasers on Silicon |
| Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Bracker, Allan |
Fr3B8.3 |
|
[Invited] Self-assembled InGaAs Quantum Dots for Quantum Nanophotonics |
| Brahem, Mohamed |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Brandstetter, Martin |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Brandt, Oliver |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Brener, Igal |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Brimont, Christelle |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Bristow, Alan |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Broderick, Chris |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Brubaker, Matthew |
Th2B6.4 |
|
STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers |
| Brueck, Steven |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Brunner, Frank |
We3D3.5 |
|
MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC |
| Bulsara, Mayank |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Burghartz, Joachim |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Busani, Tito |
Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Butté, Raphaël |
Th2B6.6 |
|
Optical Absorption and Passivation of Surface States in III-nitride Photonics |
| Buyanova, Irina |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| C A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Cabello, Neil |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Cabré, Roger |
Th1D5.3 |
|
AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model |
| Cai, Xiaowei |
We3C3.5 |
|
Mobility Extraction in Thin-Channel InGaAs MOSFETs |
| Caimi, Daniele |
We3C3.3 |
|
First Demonstration of InGaAs FinFETs on Si for RF Applications |
| Calabrese, Gabriele |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Callard, Ségolène |
Th2A6.3 |
|
Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys |
| Calleja Pardo, Enrique |
Th2B6.3 |
|
[Invited] III-Nitride Nanostructures Grown by MBE: Basics and Applications |
| Callsen, Gordon |
Th2B6.6 |
|
Optical Absorption and Passivation of Surface States in III-nitride Photonics |
| Campbell, Joe C. |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Canedy, Chadwick |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Cao, Lina |
We1D1.6 |
|
Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates |
| We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Caria, Alessandro |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Carlin, Jean-François |
Th2B6.6 |
|
Optical Absorption and Passivation of Surface States in III-nitride Photonics |
| Carrington, Peter |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Casamento, Joseph |
We4B4.4 |
|
Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures |
| Casbon, Michael |
Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Cerqueira Lopes Alves, Luís Manuel |
We1B1.5 |
|
Electrical and Optical Properties of Heavily Ge-Doped AlGaN |
| Chabak, Kelson |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Fr1PP-Ga.18 |
|
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array |
| Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Chakrabarti, Subhananda |
Fr15PP-NS.17 |
|
Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer |
| Fr15PP-NS.13 |
|
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix |
| Fr15PP-NS.14 |
|
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots |
| Fr15PP-NS.15 |
|
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting |
| Chan, Silvia |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| Chang, Chih-Hao |
We5PP-O.2 |
|
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes |
| We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| We5PP-O.1 |
|
All Exciplex Structure of Highly Efficient Tandem WOLEDs |
| Chang, Josephine |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Chang, Li-Cheng |
We5PP-RF.5 |
|
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate |
| Chang, Yi-Sheng |
We5PP-Po.3 |
|
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact |
| Chang, Yu-Lin |
We5PP-WBG.7 |
|
Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition |
| Chang-Hasnain, Connie |
We4A4.3 |
|
[Invited] High-Contrast Gratings in VCSELs |
| Chang-Hasnain, Connie J. |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Fr3B8.2 |
|
Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness |
| Charles, William |
Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Chaudhuri, Reet |
We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Chavan, Vinayak |
Fr15PP-NS.15 |
|
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting |
| Checoury, Xavier |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Chen, Chang Qiang |
Th1B5.1 |
|
Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency |
| Chen, Cheng Yu |
Fr2B7.3 |
|
Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer |
| Chen, Hong |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Chen, Hui-Yu |
We5PP-WBG.7 |
|
Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition |
| Chen, Jin-Yang |
Fr2B7.3 |
|
Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer |
| Chen, Renjie |
We2B2.2 |
|
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si |
| We2D2.4 |
|
Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si |
| Chen, Szu Hung |
We2C2.7 |
|
A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs |
| Chen, Weimin |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Chen, Wen-Ray |
Fr15PP-No.4 |
|
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method |
| Chen, Xingyou |
Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| Chen, Yaojia |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Cheng, Kai |
We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We3D3.4 |
|
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation |
| We5PP-WBG.24 |
|
Defect Control in GaN-on-Si Wafers for Power Electronics Applications |
| Cheng, Li-Chung |
Fr1PP-Ga.4 |
|
Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement |
| Cheng, Micah |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Cheng, Qi |
We5PP-RF.15 |
|
DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon |
| Cheng, Zhe |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Fr1PP-Ga.14 |
|
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces |
| Cheng, Zongzhe |
Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Chichibu, Shigefusa |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Chin, Matthew |
Th1C5.3 |
|
A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity |
| Chiu, Hao-Hsuan |
We5PP-O.2 |
|
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes |
| Chiu, Hsien-Chin |
We5PP-Po.3 |
|
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact |
| Chiu, Po-Chen |
We5PP-O.2 |
|
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes |
| Cho, Kyung-Sang |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Choi, Daehan |
We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Choi, Hoi Wai |
We4A4.4 |
|
Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors |
| Choi, Woojin |
We2B2.2 |
|
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si |
| We2D2.4 |
|
Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si |
| Choi, Young-Su |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Chou, Ming-Chang |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Chowdhury, Srabanti |
We3B3.5 |
|
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films |
| Christen, Jürgen |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Chu, Yi-Ming |
Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Chua, Soo-Jin |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Chumbes, Eduardo |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Chung, Jing Yang |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Chung, Roy |
Fr15PP-No.10 |
|
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 |
| Chyi, Jen-Inn |
We2C2.7 |
|
A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs |
| We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| We5PP-WBG.18 |
|
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer |
| Fr15PP-No.11 |
|
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs |
| Fr2B7.3 |
|
Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer |
| Clarke, Roy |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Cola, Baratunde |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Cole, Garrett |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Conibeer, Gavin |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Connelly, Blair |
Fr3B9.4 |
|
Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques |
| Convertino, Clarissa |
We3C3.3 |
|
First Demonstration of InGaAs FinFETs on Si for RF Applications |
| Cook, Kevin |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Corfdir, Pierre |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Costine, Anna |
Fr3C8.5 |
|
Silicene-on-silicide Platform |
| Craig, Adam |
Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Crawford, Mary |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Crespo, Antonio |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Cross, Karen |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Cui, Xiaorui |
Th2A6.6 |
|
Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes |
| Cutivet, Adrien |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Czornomaz, Lukas |
We3C3.3 |
|
First Demonstration of InGaAs FinFETs on Si for RF Applications |
| D A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Dadgar, Armin |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Damilano, Benjamin |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Das, Debabrata |
Fr15PP-NS.13 |
|
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix |
| Fr15PP-NS.14 |
|
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots |
| Fr15PP-NS.15 |
|
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting |
| Das, Mangal |
We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| Davanco, Marcelo |
Fr3A9.4 |
|
[Invited] Heterogeneous Integration for On-Chip Quantum Photonics with Single InAs Quantum Dots |
| Davis, William |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Dayeh, Shadi |
We2B2.2 |
|
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si |
| We2D2.4 |
|
Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si |
| de la Mata, Maria |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| De Santi, Carlo |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Deb, Parijat |
Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Decobert, Jean |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Deki, Manato |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| del Alamo, Jesus |
We1C1.3 |
|
Fin-Width Scaling of Highly-Doped InGaAs Fins |
| We1C1.5 |
|
Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width |
| We3C3.1 |
|
[Invited] III-V CMOS: Quo Vadis? |
| We3C3.5 |
|
Mobility Extraction in Thin-Channel InGaAs MOSFETs |
| We5PP-RF.16 |
|
Modeling the Parasitic Bipolar Effect in InGaAs FinFETs |
| Delli, Evangelia |
Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Delmas, Marie |
Fr15PP-Opt.4 |
|
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice |
| DeLongchamp, Dean |
We4C4.1 |
|
[Invited] Microstructure and Morphology Measurements for Organic Electronics |
| den-Hertog, Martien |
Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| DenBaars, Steven |
We2B2.4 |
|
Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs |
| We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Deng, Ligang |
Fr15PP-NS.22 |
|
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry |
| Detchprohm, Theeradetch |
We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Detz, Hermann |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Deutsch, Christoph |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Devos, Arnaud |
Fr3C7.3 |
|
Characterization of Epilayer Transfer by Colored Picosecond Acoustics |
| Diagne, Mohamed |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Dickerson, Jeramy |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Dickmann, Marcel |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Dogmus, Ezgi |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Domoto, Shin-ichi |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Dong, Zhipeng |
Th1C5.2 |
|
Efficient Learning with Ultra-low Power Compound Synaptic Devices |
| Donnelly, Joseph |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Dowling, Karen |
Fr15PP-Opt.6 |
|
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors |
| Doyennette, Laetitia |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Du, Ben |
Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Duan, Jianan |
We2A2.3 |
|
Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers |
| Dubey, Madan |
Th1C5.3 |
|
A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity |
| Duboz, Jean-Yves |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Duerr, Erik |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Dupuis, Russell |
We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Durbin, Steve |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| E A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Ebihara, Koji |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Edo, Masaharu |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Edwards, Stuart |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Egger, Werner |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Eissa, Moataz |
We5PP-L.9 |
|
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications |
| Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Ekawa, Mitsuru |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| El Kurdi, Moustafa |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Elksne, Maira |
We5PP-Po.5 |
|
AlGaN/GaN HEMTs with Reduced Self-Heating |
| Emery, Patrick |
Fr3C7.3 |
|
Characterization of Epilayer Transfer by Colored Picosecond Acoustics |
| Enck, Ryan |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Fr15PP-No.10 |
|
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 |
| Encomendero, Jimy |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| Endo, Takumi |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Endoh, Yuki |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Engmann, Sebastian |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Eremenko, Mikhail |
Fr15PP-NS.10 |
|
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates |
| Fr15PP-NS.11 |
|
Droplet Epitaxy of in/algaas Nanostructures |
| Erni, Daniel |
We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| Esmaielpour, Hamidreza |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| F A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Fahim, Reasat |
Fr15PP-Opt.15 |
|
Sidewall Roughness Atomic Force Microscopy Characterization of Deep Etched InP/〖Al〗_x 〖Ga〗_(1-x) 〖In〗_y 〖As〗_(1-y) Structures |
| Fan, Kai-Lin |
Fr15PP-No.5 |
|
In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors |
| Fang, Weicheng |
We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Farrens, Shari |
We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Fastenau, Joel |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Fay, Patrick |
We1D1.6 |
|
Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates |
| We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| Feezell, Daniel |
Th1B5.3 |
|
[Invited] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges |
| Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Feigelson, Boris |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Feldberg, Nathaniel |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Feldman, Aaron |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Feng, Chun |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Fernández-Garrido, Sergio |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Ferndahl, Mattias |
We5PP-RF.1 |
|
On the Large Signal Modeling of MM-wave GaAs PIN Diodes |
| Ferrari, Andrea |
Th1C5.4 |
|
[Invited] Placeholder Title |
| Fetters, Matthew |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Feygelson, Tatyana |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Fiedler, Andreas |
Fr3F2.4 |
|
Electronic Raman Scattering in 𝛽-Ga2O3 |
| Figueiredo, Pedro |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Fimland, Bjørn-Ove |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Finley, Joseph |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Fitzgerald, Eugene A. |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Foley, Brian |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Fr1PP-Ga.14 |
|
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces |
| Follman, David |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Frayssinet, Eric |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Freitag, Ron |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Freitas Jr, Jaime |
Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Frey, Phil |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Fu, Houqiang |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Fu, Kai |
We3D3.1 |
|
Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fujii, Takuro |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Fujioka, Hiroshi |
Tu1JP1.2 |
|
Sputtering Epitaxial Growth of III Nitrides and Its Device Applications |
| Fujisawa, Yui |
We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| Fujishiro, Hiroki |
We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Fujita, Shizuo |
Th2D6.3 |
|
Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 |
| Fr1PP-Ga.6 |
|
Phase Transition Temperatures of α-Ga2O3 on Sapphire |
| Fujiwara, Ryo |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Fukumura, Kazuyuki |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Fukunaga, Keigo |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Fullerton, Susan |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| Furuki, Ryota |
We5PP-WBG.11 |
|
Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory |
| G A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Galazka, Zbigniew |
Fr3F2.4 |
|
Electronic Raman Scattering in 𝛽-Ga2O3 |
| Gallagher, James |
Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Gallinat, Chad |
Fr3B9.4 |
|
Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques |
| Gamou, Hironori |
Fr2B7.1 |
|
Scaling Effect on Vertical FETs Using III-V Nanowire-Channels |
| Gao, Feng |
Th2A6.2 |
|
Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser |
| Gao, Xiang |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Gao, Yu |
We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| Garg, Vivek |
We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| Garrett, Gregory |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Fr15PP-No.10 |
|
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 |
| Gavell, Marcus |
We5PP-RF.1 |
|
On the Large Signal Modeling of MM-wave GaAs PIN Diodes |
| Gayral, Bruno |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Gedler, Gabriel |
Fr1PP-Ga.7 |
|
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector |
| Geelhaar, Lutz |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Genty, Frédéric |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| George, Anthony |
We2A2.7 |
|
Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots |
| Ghanbaja, Jaafar |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Giebink, Chris |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Gil, Dario |
Tu2JP2.1 |
|
The Physics of AI and Quantum Computing |
| Glaser, Caleb |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Glaser, Evan |
Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Gmachl, Claire |
Th1A5.1 |
|
[Invited] Mid-Infrared Quantum Cascade Lasers and Applications |
| Go, Rowel |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Gocalinska, Agnieszka |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Goodhue, William |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Goodman, Sarah |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Goorsky, Mark |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Goswami, Aranya |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Goto, Ken |
Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Gradecak, Silvija |
We3B3.2 |
|
Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs |
| We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Graham, Samuel |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Fr1PP-Ga.14 |
|
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces |
| Grahn, Jan |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Grajal, Jesus |
We3C3.5 |
|
Mobility Extraction in Thin-Channel InGaAs MOSFETs |
| Grandjean, Nicolas |
Th2B6.6 |
|
Optical Absorption and Passivation of Surface States in III-nitride Photonics |
| Grandusky, James |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Granstrom, Goran |
We5PP-RF.1 |
|
On the Large Signal Modeling of MM-wave GaAs PIN Diodes |
| Grassi, Roberto |
Th2C6.6 |
|
Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures |
| Green, Andrew |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Grenet, Louis |
Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Grieger, Lars |
Fr15PP-NS.4 |
|
Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays |
| Grillot, Frédéric |
We2A2.3 |
|
Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers |
| Grote, Norbert |
Fr3A9.5 |
|
Incorporation of InGaAlAs Electroabsorption Modulated Lasers in a Generic InP Photonic Integrated Circuits Platform |
| Grundmann, Annika |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Gu, Yi |
Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| Gu, Zhichen |
We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| Guido, Louis |
We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Guidry, Matthew |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Guillet, Thierry |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Gundlach, David |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Gunning, Brendan |
Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Guo, Fen |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| Guo, Jing |
Th1C5.2 |
|
Efficient Learning with Ultra-low Power Compound Synaptic Devices |
| Gupta, Chirag |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Gupta, Shalini |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Gustafsson, Anders |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Gustafsson, Sebastian |
Th1D5.2 |
|
Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs |
| Guzman, David |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| H A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Ha, D. |
We5PP-RF.13 |
|
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications |
| Haberland, Kolja |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Hacker, Christina |
We4C4.3 |
|
Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides |
| Haensch, Wilfried |
Tu1SC2.2 |
|
Analog Arrays and Algorithms |
| Hall, Douglas |
Th1A5.5 |
|
High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation |
| Haller, Jeffrey |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Hamon, Gwénaëlle |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Han, Changhyun |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Han, Il Ki |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Han, Jiahao |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Han, Yanjun |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Han, Yu |
Fr3A8.2 |
|
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy |
| Hanawa, Ikuo |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Hanke, Michael |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Hao, Ronghui |
We3D3.1 |
|
Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment |
| Hao, Zhibiao |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Hara, Naoki |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| Harden, Galen |
We1D1.6 |
|
Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates |
| Harmand, Jean-Christophe |
Fr3B9.3 |
|
[Invited] MBE Growth of GaAs Nanowires Observed in Situ by TEM |
| Harrysson Rodrigues, Isabel |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Hartmann, Fabian |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Harvey, Todd |
Th2B6.4 |
|
STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers |
| Hasebe, Koichi |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Hassan, Bilal |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Hatem, Christopher |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Hatui, Nirupam |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Haughn, Chelsea |
Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Hawkridge, Mike |
Fr15PP-NS.4 |
|
Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays |
| Hayashi, Syusaku |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Hayton, Jonathan |
Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Heilmann, Martin |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Heron, John |
Th2C6.4 |
|
[Invited] Pathways to Low Energy Control of Magnetism Using Multiferroics |
| Hersam, Mark |
Th1C5.1 |
|
[Invited] Transition Metal Dichalcogenide Memristors and Memtransistors |
| Heu, Paula |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Heuken, Lars |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Heuken, Michael |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Hickman, Austin |
We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Higashiwaki, Masataka |
Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Fr2F1.1 |
|
Introduction of Gallium Oxide Technologies |
| Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Hight Walker, Angela |
We4C4.3 |
|
Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides |
| Hill, Heather |
We4C4.3 |
|
Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides |
| Hilt, Oliver |
We3D3.5 |
|
MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC |
| Hinkle, Christopher |
We4D4.1 |
|
[Invited] High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides |
| Hirakawa, Kazuhiko |
We4A4.2 |
|
Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures |
| Th2C6.3 |
|
Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling |
| Hiraki, Tatsurou |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Hiraoka, Mizuho |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Hirose, Fukiko |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Hjort, Martin |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Ho, Yung-Ting |
We5PP-RF.5 |
|
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate |
| Hobart, Karl |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Hodgson, Peter |
Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Hoffman, Anthony |
We1D1.6 |
|
Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates |
| Höfling, Sven |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Hokama, Yohei |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Holden, William |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Honda, Tohru |
Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Honda, Yoshio |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Hong, Sung-Min |
We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| Hore, Katie |
Fr15PP-NS.22 |
|
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry |
| Horiguchi, Yuichiro |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Horino, Kazuhiko |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Horng, Ray-Hua |
Fr1PP-Ga.4 |
|
Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement |
| Fr15PP-Opt.7 |
|
Light Extraction Enhancement of AlGaInP LED by Etching Process |
| Hossain, Nazir |
Fr15PP-No.14 |
|
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application |
| Howell, Robert |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Hrobak, Michael |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Hsh, Yu-Chien |
We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| Hsiang-Chun, Wang |
We5PP-Po.3 |
|
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact |
| Hsiao, Han-Wei |
Fr15PP-No.7 |
|
3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects |
| Hsu, Chih-Hao |
Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Hsu, Kai-Chieh |
We5PP-RF.5 |
|
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate |
| Hsu, Lung-Hsing |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Hsu, Po-Hsun |
Fr15PP-No.4 |
|
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method |
| Hsu, Shan-Chun |
We2C2.7 |
|
A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs |
| Hsueh, Wei Jen |
We2C2.7 |
|
A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs |
| We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| Fr2B7.3 |
|
Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer |
| Hu, Evelyn |
Tu1JP1.3 |
|
Semiconductors at the Frontiers of Quantum Technologies |
| Hu, Jiaxi |
We5PP-O.8 |
|
Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing |
| Hu, Zongyang |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Huang, Chien-Jung |
Fr15PP-No.4 |
|
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method |
| Huang, Chien-Lung |
Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Huang, Chiung-Yi |
Fr1PP-Ga.4 |
|
Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement |
| Huang, Heming |
We2A2.3 |
|
Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers |
| Huang, Hsien-Chih |
Fr1PP-Ga.18 |
|
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array |
| Huang, Pao-Hsun |
Fr15PP-No.4 |
|
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method |
| Huang, Tzu-Yuan |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Huang, Xuanqi |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Huffaker, Diana |
Fr15PP-Opt.4 |
|
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice |
| Hugenschmidt, Christoph |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Huh, Junghwan |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Hung, Wen-Yi |
We5PP-O.1 |
|
All Exciplex Structure of Highly Efficient Tandem WOLEDs |
| We5PP-O.2 |
|
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes |
| Huo, Hongjing |
We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| We5PP-WBG.24 |
|
Defect Control in GaN-on-Si Wafers for Power Electronics Applications |
| Hwang, Ji Hyun |
We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| I A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Ichino, Kunio |
Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Ikeda, Hiroya |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Ikedo, Yuya |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Iñiguez, Benjamín |
Th1D5.3 |
|
AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model |
| Inoue, Daisuke |
We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Inoue, Naoko |
Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Ip, Kelly |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Irmscher, Klaus |
Fr3F2.4 |
|
Electronic Raman Scattering in 𝛽-Ga2O3 |
| Isaac, Brandon |
Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Isawa, Shohei |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Ishibashi, Shoji |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Ishikawa, Fumitaro |
Fr15PP-NS.5 |
|
Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires |
| Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Fr15PP-NS.9 |
|
Investigations of Light Polarization of GaAs/AlGaOx Nanowire |
| Fr15PP-No.9 |
|
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique |
| Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Ishikawa, Hiroshi |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Ishikawa, Yukari |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Ishimura, Eitaro |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Ishiura, Masami |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Islam, Md Mahbubul |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| Islam, SM |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Ito, Tomonori |
Fr15PP-NS.21 |
|
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001) |
| Iwamoto, Satoshi |
Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Iyechika, Yasushi |
We5PP-WBG.12 |
|
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool |
| Iza, Michael |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| J A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Jang, Bongyong |
Th2A6.4 |
|
High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate |
| Jang, Jae-Hyung |
We2C2.4 |
|
Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology |
| We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| Jang, Jeonghwan |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| Jansson, Mattias |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Jaouad, Abdelatif |
We3D3.2 |
|
Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer |
| Jena, Debdeep |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| We4B4.4 |
|
Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures |
| We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Jeon, Daewoo |
Fr1PP-Ga.8 |
|
Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods |
| Jeon, Heonsu |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Th2A6.3 |
|
Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys |
| Jeon, Young-Jin |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Jeong, Hae Yong |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Jernigan, Glenn |
Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Jessen, Gregg |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Jezzini, Moises |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Ji, Wanyan |
Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Jiang, Huaxing |
We3D3.4 |
|
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation |
| Jiang, Lijuan |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Jimenez, Jose |
Th1D5.1 |
|
Impact of Traps on RF HEMT Linearity |
| Jiménez, Juan |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Jinno, Riena |
Fr1PP-Ga.6 |
|
Phase Transition Temperatures of α-Ga2O3 on Sapphire |
| Johnson, Noble |
Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Joishi, Chandan |
Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| Jokinen, Thomas |
We5PP-Po.9 |
|
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications |
| Jones, Christina |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Jönsson, Adam |
We1C1.4 |
|
Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process |
| Jun, Dong-Hwan |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Jung, Hyunho |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| K A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Kadir, Abdul |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Kageyama, Takeo |
Th2A6.4 |
|
High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate |
| Kainz, Martin |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Kaizu, Toshiyuki |
Fr15PP-NS.18 |
|
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission |
| Kakitsuka, Takaaki |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Kalisch, Holger |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Kallsi, Tania |
Fr15PP-NS.8 |
|
Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures |
| Kamimura, Ryuuichirou |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Kamp, Martin |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Kan, Shin-ichi |
Th2D6.3 |
|
Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 |
| Kanazawa, Toru |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| Kaneko, Kentaro |
Th2D6.3 |
|
Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 |
| Fr1PP-Ga.6 |
|
Phase Transition Temperatures of α-Ga2O3 on Sapphire |
| Kang, JoonHyun |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Kanjanachuchai, Songphol |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Kanno, Atsushi |
Fr3B8.4 |
|
High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band |
| Kao, Tsung-Sheng |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Kaplar, Robert |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Kapraun, Jonas |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Fr3B8.2 |
|
Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness |
| Kasai, Jumpei |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Kaspari, Christian |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Katkov, Andrey |
Fr2B7.3 |
|
Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer |
| Kato, Naoki |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Kattner, Michael |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Kawaguchi, Kenichi |
We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| Fr2B7.5 |
|
GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting |
| Kawai, Shoya |
We1B1.3 |
|
[Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing |
| Kawamura, Shougo |
We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| Kawano, Yoichi |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| Kazior, Thomas |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Keller, Stacia |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| We3B3.5 |
|
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Kelley, Stephen |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Kelly, Niall |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Kennedy, Theodore |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Kermas, Nawel |
Th1D5.3 |
|
AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model |
| Khan, Asif |
Fr3C8.1 |
|
[Invited] Negative Capacitance Transistors: Physics, Materials and the State-of-Art |
| Khan, Md Arif |
We5PP-WBG.8 |
|
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures |
| We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| Khandelwal, Sourabh |
We5PP-RF.15 |
|
DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon |
| Kikuchi, Takehiko |
Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Kim, Chul-Soo |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Kim, Dong Hak |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Kim, Giwoong |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| Kim, Hanbit |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| Kim, Jeehwan |
Tu1SC1.1 |
|
Introduction |
| Kim, Jihyun |
Fr1PP-Ga.2 |
|
Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3 |
| Kim, Jongmyeong |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| We3B3.1 |
|
Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate |
| Kim, Jungho |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Kim, Maengkyu |
We2C2.4 |
|
Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology |
| We5PP-RF.13 |
|
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications |
| Kim, Mijin |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Kim, Munho |
Fr1PP-Ga.18 |
|
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array |
| Kim, Samuel |
Fr1PP-Ga.14 |
|
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces |
| Kim, Se-Mi |
We2C2.4 |
|
Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology |
| Kim, Tae Geun |
We5PP-O.4 |
|
Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM |
| Fr15PP-Opt.8 |
|
High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes |
| Kimura, Takeshi |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Kioupakis, Emmanouil |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Kiravittaya, Suwit |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Kirch, Jeremy |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Kirste, Lutz |
We5PP-WBG.1 |
|
Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si |
| Kise, Nobukazu |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| Kishi, Tomoya |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Kisslinger, Kim |
Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Kita, Takashi |
Fr15PP-NS.18 |
|
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission |
| Kitada, Takahiro |
We2A2.4 |
|
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection |
| Klamkin, Jonathan |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Knebl, Georg |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Knutsson, Johan |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Kobayashi, Masakazu |
We5PP-O.9 |
|
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation |
| Koehler, Andrew |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Koester, Steven |
We5PP-O.8 |
|
Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing |
| Th2C6.6 |
|
Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures |
| Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Koike, Takaaki |
Fr15PP-NS.18 |
|
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission |
| Koirala, Sandhaya |
Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Koishikawa, Yuki |
Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Kojima, Kazunobu |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Koksal, Okan |
Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Koksaldi, Onur |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Koleske, Dan |
Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Kolev, Emil |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Konishi, Keita |
Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Korchnoy, Valentina |
Fr15PP-No.8 |
|
Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application |
| Koschine, Toenjes |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Krall, Michael |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Kranti, Abhinav |
We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| We5PP-WBG.8 |
|
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures |
| Krier, Anthony |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Krüger, Olaf |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Krysiak, Hubert |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Kuang-Po, Hsueh |
We5PP-Po.3 |
|
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact |
| Kub, Fritz |
We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Kuball, Martin |
We2D2.7 |
|
[Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Kuboya, Shigeyuki |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Kuech, Thomas |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Külberg, Alexander |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Kumagai, Naoto |
We2A2.4 |
|
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection |
| We5PP-WBG.23 |
|
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap |
| Kumagai, Yoshinao |
Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Fr2F1.3 |
|
[Invited] Development of Halide Vapor Phase Epitaxy of Ga2O3 for Power Device Applications |
| Kumar, Amitesh |
We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| We5PP-WBG.8 |
|
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures |
| We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| Kumar, Pragati |
Fr15PP-NS.8 |
|
Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures |
| Kumasaka, Konosuke |
We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| Kümmell, Tilmar |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Kuo, Hao-Chung |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Kuramata, Akito |
Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Kuramata, Akito |
Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Kuramata, Akito |
Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Kushimoto, Maki |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Kwoen, Jinkwan |
Th2A6.4 |
|
High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate |
| Kwon, Young-Ki |
We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| Kyrtsos, Alexandros |
Th2D6.1 |
|
A First Principles Approach on the Possibility of P-Type Ga2O3 |
| L A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Lagally, Max |
Th2A6.6 |
|
Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes |
| Laha, Apurba |
Fr3B9.2 |
|
Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry |
| Lai, Yi-Ning |
We5PP-O.2 |
|
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes |
| Laleyan, David |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| LaRoche, Jeffrey |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Larrue, Alexandre |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Lau, Kei May |
We3D3.4 |
|
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation |
| We3A3.2 |
|
High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers |
| Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Fr3A8.2 |
|
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy |
| Lau, Wai-Keung |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Lauhon, Lincoln |
Fr3C7.4 |
|
[Invited] Total Tomography of Nonplanar InGaAs Quantum Wells on GaAs Nanowires |
| Laurent, Matthew |
We3B3.5 |
|
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films |
| Law, Stephanie |
We2A2.6 |
|
Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants |
| We3A3.4 |
|
[Invited] High-quality Growth of Chalcogenide Topological Insulators |
| Lee, Byeong Ryong |
We5PP-O.4 |
|
Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM |
| Lee, Donghyun |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| Lee, Geng-Yen |
Fr15PP-No.11 |
|
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs |
| Lee, Jongho |
We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Lee, Myungjae |
We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Th2A6.3 |
|
Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys |
| Lee, Seungmin |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Lee, Sungbae |
We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| Lee, Tae Ho |
Fr15PP-Opt.8 |
|
High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes |
| Lee, Yen-Chang |
We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| Leedy, Kevin |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Lehmann, Sebastian |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Lemettinen, Jori |
We5PP-WBG.6 |
|
Nitrogen-face AlN-based Field-Effect Transistors |
| Li, Ankang |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Li, Bo-Hong |
We5PP-Po.3 |
|
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact |
| Li, Chao |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Li, Haoran |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Li, Hongtao |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Li, Kuang-Hui |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| LI, Kwai Hei |
We4A4.4 |
|
Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors |
| Li, Qiang |
We3A3.2 |
|
High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers |
| Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Li, Wei |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Li, Wenshen |
Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Li, Xiaohang |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Li, Xiaohang |
We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Li, Xiaohang |
Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Li, Xiaohang |
Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Li, Xiuling |
Fr1PP-Ga.18 |
|
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array |
| Liang, Baolai |
Fr15PP-Opt.4 |
|
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice |
| Liao, Che-Hao |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Liao, Chia-Wei |
We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| Liborius, Lisa |
Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Lim, Hyejin |
We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Lim, Jaejin |
We5PP-RF.13 |
|
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications |
| Lin, Chien-Chung |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Lin, Chun-Han |
We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| Lin, En-Shuo |
We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| Lin, Hsiao-Chien |
Fr15PP-NS.16 |
|
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device |
| Lin, Shao-Yang |
Fr15PP-NS.16 |
|
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device |
| Lin, Yi-Hung |
Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Lin, You-Cheng |
Fr15PP-Opt.7 |
|
Light Extraction Enhancement of AlGaInP LED by Etching Process |
| Lin, Yu-Chuan |
We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| Lind, Erik |
We3C3.4 |
|
Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications |
| Lindelöw, Fredrik |
We3C3.4 |
|
Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications |
| Lindemuth, Jeffrey |
Fr15PP-No.3 |
|
FastHall™: A Method to Measure Low Mobility Materials for Multi-Carrier Analysis |
| Lindquist, Miles |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Lisiansky, Michael |
Fr15PP-No.8 |
|
Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application |
| Liu, Amy |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Liu, Chao |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We3D3.6 |
|
Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode |
| Liu, Cheng |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Liu, Fengqi |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Liu, Kai |
We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| Liu, Luqiao |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Liu, Ren-Yo |
Fr15PP-NS.16 |
|
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device |
| Liu, Richard |
Th1B5.1 |
|
Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency |
| Liu, Wei-Sheng |
We5PP-WBG.7 |
|
Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition |
| Fr15PP-NS.16 |
|
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device |
| Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Liu, Xianhe |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| Liu, Xiaotong |
We1B1.3 |
|
[Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing |
| Liu, Zhihong |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Liu, Zhihong |
We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| Llopis, Antonio |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Long, Clay |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Lopes, Marcelo |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Lorentz, Katharina |
We1B1.5 |
|
Electrical and Optical Properties of Heavily Ge-Doped AlGaN |
| Loubychev, Dmitri |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Lourdudoss, Sebastian |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Low, Tony |
Th2C6.6 |
|
Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures |
| Lu, Chin-Wei |
We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| Lu, Haitao |
We4A4.4 |
|
Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors |
| Lu, Qi |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Lu, Wenjie |
We1C1.5 |
|
Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width |
| LU, Xiangmeng |
We2A2.4 |
|
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection |
| Lu, Xing |
We5PP-Po.1 |
|
3.3-mΩ·cm2 GaN-based Vertical Trench MOSFET with Threshold Voltage Reaching 6.2 V |
| Fr1PP-Ga.3 |
|
X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes |
| Lu, Zhenguo |
We2A2.3 |
|
Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers |
| Luna, Esperanza |
We1A1.3 |
|
Analysis of Composition Profiles and Strain Across Heterovalent Non-Common-Atom CdTe/InSb Interfaces |
| Fr15PP-No.9 |
|
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique |
| Luna, Lunet |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Lund, Cory |
Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Luo, Yi |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Luo, Zhaochu |
We5PP-O.5 |
|
Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device |
| Lyakh, Arkadiy |
Th2A6.1 |
|
[Invited] Quantum Cascade Lasers on Metamorphic Buffer Layer |
| Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Lynsky, Cheyenne |
We2B2.4 |
|
Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs |
| Lyu, Qifeng |
We3D3.4 |
|
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation |
| M A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Ma, Jun |
We2D2.3 |
|
2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture |
| Ma, Yingjie |
Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| MacFarland, Donald |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Machida, Ryuto |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| Maertens, Alban |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Maher, Hassan |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We3D3.2 |
|
Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer |
| We5PP-Po.10 |
|
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Makaino, Akinori |
Fr15PP-NS.12 |
|
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition |
| Makin, Robert |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Makiyama, Kozo |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| Mandal, Biswajit |
We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| Manz, Christian |
We5PP-WBG.1 |
|
Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si |
| Mao, Samuel |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Marcinkevicius, Saulius |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Margala, Martin |
Fr15PP-No.14 |
|
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application |
| Margueron, Samuel |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Mariño Camargo, Álvaro |
Fr15PP-No.13 |
|
Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples |
| Markman, Brian |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Marshall, Andrew |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Marthi, Poorna |
Fr15PP-No.14 |
|
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application |
| Martin, Mickael |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Martínez, Oscar |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Marx, Matthias |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Mashooq, Kishwar |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| Masui, Tatekazu |
Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Mates, Thomas |
Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Fr1PP-Ga.16 |
|
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy |
| Mathis, James |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Matioli, Elison |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We2D2.3 |
|
2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture |
| We3D3.6 |
|
Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode |
| Fr2B7.2 |
|
Multi-nanowire In-Plane-Gate Field Effect Transistors |
| Matsubara, Masahiko |
Th2D6.1 |
|
A First Principles Approach on the Possibility of P-Type Ga2O3 |
| Matsui, Shin'e |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Matsumoto, Atsushi |
We5PP-L.2 |
|
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers |
| Fr3B8.4 |
|
High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band |
| Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Matsumoto, Keisuke |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Matsumoto, Koh |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Matsuo, Shinji |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Matsuoka, Takashi |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Matsushima, Yuichi |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Matsuyama, Hideaki |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Mauze, Akhil |
Fr1PP-Ga.16 |
|
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy |
| Mawst, Luke |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Mayama, Norihito |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Mazzolini, Piero |
Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| McCarthy, Robert |
We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| McGlone, Joe |
Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| McIntosh, K. |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| McKibbin, Sarah |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| McNie, Mark |
Fr15PP-NS.22 |
|
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry |
| Medjdoub, Farid |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Megalini, Ludovico |
Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Meneghesso, Gaudenzio |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Meneghini, Matteo |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Merritt, Charles |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Metzner, Sebastian |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Meyer, Jerry |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Mi, Zetian |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| Middleton, Callum |
Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Mikalopas, John |
We5PP-RF.9 |
|
Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub |
| Mikhaylin, Ilya |
Fr15PP-NS.10 |
|
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates |
| Fr15PP-NS.11 |
|
Droplet Epitaxy of in/algaas Nanostructures |
| Mikkelsen, Anders |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Miller, Ruth |
Fr15PP-Opt.6 |
|
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors |
| Millithaler, Jean Francois |
Fr15PP-No.14 |
|
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application |
| Minami, Yasuo |
We2A2.4 |
|
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection |
| Mishima, Akira |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Mishima, Tetsuya |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Mishra, Umesh |
We1D1.4 |
|
1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET |
| We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| We3B3.5 |
|
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Miska, Patrice |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Mitarai, Takuya |
Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Miyake, Hideto |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| We1B1.3 |
|
[Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing |
| Miyamoto, Yasuyuki |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| Mochizuki, Keita |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Moe, Craig |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Molina, Sergio |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Monavarian, Morteza |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Monroy, Eva |
We1B1.5 |
|
Electrical and Optical Properties of Heavily Ge-Doped AlGaN |
| Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| Montes, Jossue |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Moon, Daeyoung |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| We3B3.1 |
|
Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate |
| We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Morgan, Aled |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Morishita, Tomohiro |
Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Morita, Ken |
We2A2.4 |
|
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection |
| Moschetti, Giuseppe |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Moser, Neil |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Motohisa, Junichi |
Fr2B7.1 |
|
Scaling Effect on Vertical FETs Using III-V Nanowire-Channels |
| Mou, Shin |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Muhea, Wondwosen |
Th1D5.3 |
|
AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model |
| Mukherjee, Shaibal |
We5PP-WBG.8 |
|
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures |
| We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| Mun, Ha Jin |
We5PP-Po.4 |
|
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs |
| Murakami, Hisashi |
Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Murakami, Hisashi |
Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Muziol, Grzegorz |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| Myszka, Michael |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| N A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Nagai, Naomi |
We4A4.2 |
|
Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures |
| Th2C6.3 |
|
Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling |
| Nagamatsu, Ken |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Nagamatsu, Kentaro |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Nagasaka, Kumi |
Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Nagase, Masanori |
We2C2.6 |
|
Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes |
| Nago, Hajime |
We5PP-WBG.12 |
|
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool |
| Nakajima, Shinya |
We5PP-L.2 |
|
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers |
| Nakamura, Kohji |
Fr15PP-NS.21 |
|
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001) |
| Nakamura, Nagisa |
We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| Nakamura, Shuji |
We2B2.4 |
|
Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs |
| We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Nakamura, Tohru |
Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Nakanishi, Masataka |
We5PP-RF.18 |
|
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology |
| Nakasha, Yasuhiro |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| Nakata, Yoshiaki |
Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Nakhaie, Siamak |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Nami, Mohsen |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Nami, Mohsen |
Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Naranjo, Fernando |
Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Natsui, Jun |
Fr15PP-NS.9 |
|
Investigations of Light Polarization of GaAs/AlGaOx Nanowire |
| Neal, Adam |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Nelson, Scott |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Ng, Geok Ing |
We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| Ng, Kar Wei |
Fr3B8.2 |
|
Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness |
| Nilsen, Julie |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Nilsson, Per-Åke |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Nishikawa, Satoshi |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Nishimoto, Yoshifumi |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Nishinaka, Hiroyuki |
Fr1PP-Ga.12 |
|
Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition |
| Nishiyama, Nobuhiko |
We5PP-L.9 |
|
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications |
| We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Nitta, Shugo |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Noh, Jinhyun |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Nomoto, Kazuki |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Nomura, Masahiro |
We2A2.7 |
|
Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots |
| Nosaeva, Ksenia |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Nourbakhsh, Amirhasan |
Fr3C8.2 |
|
Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack |
| Nuñez-Cascajero, Arantzazu |
Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Nuntawong, Noppadon |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| O A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| O'neill, Emily |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| O'Reilly, Eoin |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Oda, Masato |
We5PP-WBG.11 |
|
Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory |
| Odnoblyudov, Vladimir |
We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| Oh, Jehong |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| Oh, Sang Ho |
Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Oh, Sooyeoun |
Fr1PP-Ga.2 |
|
Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3 |
| Ohsawa, Kazuto |
We3C3.2 |
|
Fabrication of InGaAs Nanosheet Transistors with Regrown Source |
| Ohta, Katsuya |
Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Okamoto, Naoya |
We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| Fr2B7.5 |
|
GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting |
| Okamoto, Satoru |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Okimoto, Takuya |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Okumura, Hironori |
We5PP-WBG.6 |
|
Nitrogen-face AlN-based Field-Effect Transistors |
| Okumura, Naoto |
We5PP-RF.18 |
|
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology |
| Okur, Serdal |
Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Olea, Javier |
Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Omanakuttan, Giriprasanth |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Onuma, Takeyoshi |
Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Opila, Robert |
Fr15PP-NS.20 |
|
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons |
| Osada, Yamato |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Osawa, Koki |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Ota, Yasutomo |
Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Ottaviani, Alessandro |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| P A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Paiella, Roberto |
Th2A6.6 |
|
Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes |
| Pal, Debdas |
We5PP-RF.3 |
|
Development of 25 GHz InGaAs/InP P-I-N Photodetectors for High Speed Optical Communications |
| Palacios, Tomas |
Tu1JP1.1 |
|
Welcome Remarks |
| We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.3 |
|
Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications |
| We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| We5PP-Po.9 |
|
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications |
| We5PP-WBG.6 |
|
Nitrogen-face AlN-based Field-Effect Transistors |
| Fr3C8.2 |
|
Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack |
| Palmstrom, Chris |
Th2C6.1 |
|
[Invited] Growth and Electronic Properties of Heusler Epitaxial Thin Films |
| Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Pan, C. L. |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Panda, Debi |
Fr15PP-NS.13 |
|
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix |
| Fr15PP-NS.14 |
|
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots |
| Fr15PP-NS.15 |
|
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting |
| Pandey, Ayush |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| Panyakeow, Somsak |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Park, Ju Hyun |
We5PP-O.4 |
|
Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM |
| Park, Tae Hoon |
Fr15PP-Opt.8 |
|
High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes |
| Park, Yeonsang |
We5PP-L.3 |
|
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating |
| We5PP-L.4 |
|
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application |
| Park, Yongjo |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| We3B3.1 |
|
Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate |
| We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Park, Young Jea |
We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Parke, Justin |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Pasayat, Shubhra |
Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Pate, Bradford |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Patil, Pallavi |
Fr15PP-No.9 |
|
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique |
| Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Pelucchi, Emanuele |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Pennycook, Stephen |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Pépin, Marie-Clara |
We5PP-Po.10 |
|
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism |
| Persson, Olof |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Peters, Frank |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Peterson, Rebecca |
Th2D6.7 |
|
[Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors |
| Peysokhan, Mostafa |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Pfeffer, Pierre |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Phienlumlert, Pakawat |
Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Pickrell, Greg |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Piedra, Daniel |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Pin-Yi Chiang, Pin-Yi |
We5PP-O.1 |
|
All Exciplex Structure of Highly Efficient Tandem WOLEDs |
| Pineda Rojas, Elkin Giovanni |
Fr15PP-No.13 |
|
Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples |
| Piyathilaka, Herath |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Polaczynski, Jakub |
Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| Poloczek, Artur |
Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Pomeroy, James |
Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Pookpanratana, Sujitra |
We4C4.3 |
|
Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides |
| Poole, Philip |
We2A2.3 |
|
Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers |
| Posri, Supeeranat |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Pourkabirian, Arsalan |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Pradipto, Abdul-Muizz |
Fr15PP-NS.21 |
|
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001) |
| Prasertsuk, Kiattiwut |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Prost, Werner |
We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Protasenko, Vladimir |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Provost, Gary |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Q A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Qi, Jipeng |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Qin, Yanbin |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| Qiu, Boqi |
Th2C6.3 |
|
Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling |
| R A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Rafique, Subrina |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Rai, Ashish |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Rajan, Siddharth |
Fr2F1.4 |
|
[Invited] Material and Device Engineering for Gallium Oxide Field Effect Transistors |
| Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| Rajeev, Ayushi |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Ramsteiner, Manfred |
Fr3F2.4 |
|
Electronic Raman Scattering in 𝛽-Ga2O3 |
| Rana, Farhan |
Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Ranjan, Kumud |
We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| Rashidi, Arman |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Ratanathammaphan, Somchai |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Rawal, Yaksh |
Fr15PP-Opt.4 |
|
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice |
| Reeves, Roger |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Reinke, Petra |
Fr3C8.5 |
|
Silicene-on-silicide Platform |
| Reis, Anna |
We3D3.5 |
|
MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC |
| Ren, Dingding |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Rennesson, Stephanie |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Reno, John |
Th2A6.6 |
|
Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes |
| Renso, Nicola |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Rentner, Dirk |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Repiso, Eva |
We1A1.2 |
|
InAsSb/InAlAs Quantum Wells on GaAs Substrates for the Mid-Infrared Spectral Range |
| Fr3A8.3 |
|
GaSb Based Materials and Devices Epitaxially Grown onto Silicon |
| Rest, Joachim |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Richard, Kyle |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Richardella, Anthony |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Richter, Lee |
We4C4.2 |
|
The Role of Higher Order Effects in Rubrene/C60 OLEDs |
| Riechert, Henning |
We4D4.2 |
|
Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy |
| Ringel, Steven |
Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| Rishinaramangalam, Ashwin |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Fr2A7.2 |
|
Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication |
| Roberts, Kenneth |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Rodriguez, Christophe |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We3D3.2 |
|
Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer |
| We5PP-Po.10 |
|
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Rodwell, Mark |
Tu2JP2.2 |
|
Transistors: mm-Wave and Low-Power VLSI |
| Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Romanczyk, Brian |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Th1B5.4 |
|
Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD |
| Rorsman, Niklas |
Th1D5.2 |
|
Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs |
| Roshko, Alexana |
Th2B6.4 |
|
STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers |
| Rouillard, Yves |
Fr15PP-Opt.3 |
|
Towards the Monolithic Integration of GaSb Solar Cells on Si |
| Rousseau, Ian |
Th2B6.6 |
|
Optical Absorption and Passivation of Surface States in III-nitride Photonics |
| Rouvimov, Sergei |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| Rudin, Sergey |
We5PP-RF.2 |
|
Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors |
| Rupper, Greg |
We5PP-RF.2 |
|
Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors |
| Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| S A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Saadat, Irfan |
Fr15PP-No.6 |
|
InSe Metal Contact Optimization for Enhanced InSe FET Performance |
| Saha, Jhuma |
Fr15PP-NS.13 |
|
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix |
| Fr15PP-NS.14 |
|
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots |
| Fr15PP-NS.15 |
|
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting |
| Saifaddin, Burhan |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Sakamoto, Katsuyoshi |
Fr15PP-NS.12 |
|
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition |
| Sakurai, Kenji |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Salagaj, Tom |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Samarth, Nitin |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Fr3C8.4 |
|
[Invited] Topological Spintronic Devices |
| Sampath, Anand |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Fr15PP-No.10 |
|
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 |
| Sanchez Esqueda, Ivan |
Th1C5.2 |
|
Efficient Learning with Ultra-low Power Compound Synaptic Devices |
| Sano, Hayato |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Santoruvo, Giovanni |
Fr2B7.2 |
|
Multi-nanowire In-Plane-Gate Field Effect Transistors |
| Santos, Michael |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Sanyal, Indraneel |
We5PP-RF.12 |
|
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel |
| We5PP-WBG.18 |
|
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer |
| Fr15PP-No.11 |
|
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs |
| Sarney, Wendy |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Sasaki, Kohei |
Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Sato, Masaru |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| Fr2B7.5 |
|
GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting |
| Sauvage, Sébastien |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Sawyer, Shayla |
Fr1PP-Ga.7 |
|
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector |
| Saxena, Nupur |
Fr15PP-NS.8 |
|
Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures |
| Schaller, Richard |
Th1B5.1 |
|
Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency |
| Schewski, Robert |
Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Schleeh, Joel |
Fr2B7.6 |
|
Magnetic Influence on Cryogenic InP HEMT DC Characteristics |
| Schlenvogt, Garrett |
We5PP-Po.9 |
|
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications |
| Schmidt, Gordon |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Schönfeld, Saskia |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Schönhuber, Sebastian |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Schowalter, Leo |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Schrenk, Werner |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Schuette, Michael |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Schürmann, Hannes |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Schuster, Fabian |
Fr3B8.2 |
|
Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness |
| Seabaugh, Alan |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| Seassal, Christian |
Th2A6.3 |
|
Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys |
| Segercrantz, Natalie |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Sekiguchi, Hiroto |
Th2B6.2 |
|
Europium Doped GaN Nanocolumn Light-Emitting Diodes Exhibiting High Emission-Wavelength Stability |
| Sekiyama, Takahito |
Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Sellers, Ian |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Semond, Fabrice |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Senabulya, Nancy |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Senesky, Debbie |
Fr15PP-Opt.6 |
|
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors |
| Shabani, Javad |
We1A1.1 |
|
[Invited] Heterostructures of Narrow-Gap Semiconductor and Superconductors for Quantum Information Applications |
| Shakouri, Ali |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Shariar, Kazy |
Fr15PP-NS.19 |
|
HSQ Etching Resistance Dependence on Substrate |
| Fr15PP-NS.20 |
|
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons |
| Sharma, Prachi |
Fr1PP-Ga.7 |
|
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector |
| Shi, Bei |
We3A3.2 |
|
High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers |
| Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Shi, Yanhui |
Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Shiba, Shoichi |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| Shimizu, Mitsuaki |
We2C2.6 |
|
Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes |
| We5PP-WBG.23 |
|
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap |
| Shimizu, Yumiko |
Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Shimomura, Satoshi |
Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Fr15PP-No.9 |
|
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique |
| Shin, Jin |
We1B1.1 |
|
Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy |
| Shinohe, Takashi |
Th2D6.3 |
|
Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 |
| Fr1PP-Ga.17 |
|
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates |
| Shinozuka, Yuzo |
We5PP-WBG.11 |
|
Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory |
| Shoji, Daisei |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Shojiki, Kanako |
We1B1.3 |
|
[Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing |
| Shur, Michael |
We5PP-RF.2 |
|
Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors |
| We5PP-RF.9 |
|
Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub |
| Si, Mengwei |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Siddiqui, Saima |
Th2C6.5 |
|
Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator |
| Siekacz, Marcin |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| Singh, Akshay |
We3B3.2 |
|
Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs |
| We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Singh, Manikant |
Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Singh, Rohit |
We5PP-O.7 |
|
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior |
| We5PP-O.6 |
|
Effect of Schottky Interfaces in Yttria Based Memristive Devices |
| We5PP-WBG.5 |
|
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films |
| We5PP-WBG.8 |
|
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures |
| Skierbiszewski, Czeslaw |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| Smith, Jeremy |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Smith, Michael |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| Södergren, Lasse |
We3C3.4 |
|
Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications |
| Sogabe, Tomah |
Fr15PP-NS.12 |
|
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition |
| Sohr, Patrick |
We2A2.6 |
|
Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants |
| Soirez, Lovelace |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Soleimanzadeh, Reza |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| Solodovnik, Maxim |
Fr15PP-NS.10 |
|
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates |
| Fr15PP-NS.11 |
|
Droplet Epitaxy of in/algaas Nanostructures |
| Soltani, Ali |
We2D2.6 |
|
Scaling of GaN HEMTs Thermal Transient Characteristics |
| We3D3.2 |
|
Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer |
| We5PP-Po.10 |
|
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism |
| We5PP-Po.11 |
|
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance |
| Son, Hoki |
Fr1PP-Ga.8 |
|
Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods |
| Son, Youngbae |
Th2D6.7 |
|
[Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors |
| Song, Jindong |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Sopitpan, Suwat |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Soresi, Stefano |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Sousa, Marilyne |
We3C3.3 |
|
First Demonstration of InGaAs FinFETs on Si for RF Applications |
| Specht, Matty |
Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Speck, James |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Speck, James |
Fr1PP-Ga.16 |
|
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy |
| Speck, James |
Fr2F1.2 |
|
[Invited] Development of (AlxGa1-x)2O3/Ga2O3 Heterostructures and Devices |
| Speck, James |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Speich, Claudia |
Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Spies, Maria |
Fr2A7.3 |
|
Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology |
| Srivastava, Saurabh |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Stephan, Andrew |
We5PP-O.8 |
|
Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing |
| Stewart, Eric |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Stoppel, Dimitri |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| Strachan, Alejandro |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| Strait, Jared |
Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Strasser, Gottfried |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Stricklin, Isaac |
Th2B6.5 |
|
GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication |
| Strittmatter, André |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Su, Dong |
Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Suemitsu, Tetsuya |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Sugawara, Yoshihiro |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Suhara, Michihiko |
We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| We5PP-RF.18 |
|
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology |
| Fr2B7.5 |
|
GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting |
| Suihkonen, Sami |
We5PP-WBG.6 |
|
Nitrogen-face AlN-based Field-Effect Transistors |
| Sumino, Jumpei |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Sun, Changzheng |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Sun, Haiding |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| We5PP-WBG.14 |
|
MOCVD-grown BAlN-contained Heterojunctions |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Sun, Qian |
We2B2.3 |
|
[Invited] GaN-on-Si Laser Diodes and Normally-Off HEMTs |
| Sun, Wenyuan |
Th1D5.1 |
|
Impact of Traps on RF HEMT Linearity |
| Sun, Yan-Ting |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| Suran Brunelli, Simone Tommaso |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Suttinger, Matthew |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Suzuki, Junichi |
We5PP-L.9 |
|
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications |
| Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Suzuki, Safumi |
We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| We5PP-RF.11 |
|
Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region |
| Suzuki, Takahiro |
We5PP-RF.19 |
|
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering |
| Svensson, Johannes |
We1C1.4 |
|
Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process |
| Svensson, Stefan |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Syaranamual, Govindo |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| T A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Tabataba-Vakili, Farsane |
Fr2A7.6 |
|
[Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform |
| Tabuchi, Toshiya |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Tachibana, Fumihito |
Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Tadjer, Marko |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| We3D3.7 |
|
A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates |
| We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Fr1PP-Ga.13 |
|
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen |
| Fr3F3.6 |
|
P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide |
| Tahara, Daisuke |
Fr1PP-Ga.12 |
|
Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition |
| Takabayashi, Masakazu |
Fr15PP-Opt.9 |
|
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate |
| Takada, Kyohei |
Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Takahashi, Hideshi |
We5PP-WBG.12 |
|
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool |
| Takahashi, Motoi |
Fr15PP-No.12 |
|
Interplay Between Fabry-Pérot Resonance and Disorder Effect in Middle Mobility Quantum Point Contacts |
| Takahashi, Tokio |
We2C2.6 |
|
Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes |
| Takahashi, Tsuyoshi |
We1C1.1 |
|
[Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs |
| We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| Fr2B7.5 |
|
GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting |
| Takahasi, Masamitu |
Fr3C7.1 |
|
[Invited] Liquid-Solid Interface as Crystal Growth Front |
| Takashima, Shinya |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Takatsuka, Akio |
Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Takeda, Koji |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Takemoto, Shu |
Th2D6.3 |
|
Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3 |
| Takeuchi, Jun |
We5PP-RF.14 |
|
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer |
| Takeuchi, Keita |
We4C4.4 |
|
Growth of Molecularly Doped Organic Single Crystal by a Novel Method Using Electrospray and Low Vapor Pressure Solvent |
| Takeuchi, Tatsuya |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Takeuchi, Tetsuya |
We2B2.6 |
|
[Invited] Electrically-Injected GaN-based VCSELs |
| Talbi, Abdelkrim |
Fr1PP-Ga.9 |
|
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties |
| Tamalampudi, Srinivasa |
Fr15PP-No.6 |
|
InSe Metal Contact Optimization for Enhanced InSe FET Performance |
| Tan, Aaron Tze Rue |
Th1A5.3 |
|
III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers |
| Tanaka, Atsunori |
We2B2.2 |
|
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si |
| We2D2.4 |
|
Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si |
| Tanaka, Atsushi |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Tandaechanurat, Aniwat |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Tanen, Nicholas |
Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Tanikawa, Tomoyuki |
Fr3B9.7 |
|
Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs |
| Tarntair, Fu-Gow |
Fr15PP-Opt.7 |
|
Light Extraction Enhancement of AlGaInP LED by Etching Process |
| Tasker, Paul |
Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Taylor, Aidan |
Fr3A8.4 |
|
Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD |
| Tegude, Franz-Josef |
Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Thainoi, Supachok |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Thanachayanont, Chanchana |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Theng, Mark |
Fr3C8.2 |
|
Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack |
| Thieu, Quang Tu |
Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Thomas, Kevin |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Thomson, Darren |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Thorsell, Mattias |
Th1D5.2 |
|
Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs |
| Tian, Yuan |
Th1A5.5 |
|
High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation |
| Timm, Rainer |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Ting, Min |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Tingzon, Philippe |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Toda, Kazuya |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Tomasulo, Stephanie |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Tomioka, Katsuhiro |
Fr2B7.1 |
|
Scaling Effect on Vertical FETs Using III-V Nanowire-Channels |
| Tomita, Yuji |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Tompa, Gary |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Tongbram, Binita |
Fr15PP-NS.17 |
|
Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer |
| Torres-Castanedo, Carlos |
Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Fr3F2.2 |
|
Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD |
| Tournet, Julie |
Fr15PP-Opt.3 |
|
Towards the Monolithic Integration of GaSb Solar Cells on Si |
| Tournié, Eric |
We3A3.1 |
|
[Invited] Sb-based IR Detector and Emitter Materials |
| Fr15PP-Opt.3 |
|
Towards the Monolithic Integration of GaSb Solar Cells on Si |
| Trimble, Tina |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Truong, Gar-Wing |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Tsai, Chih-Chieh |
We5PP-O.3 |
|
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds |
| Tseng, Hsing Ying |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Tseng, I-Chen |
We5PP-RF.6 |
|
High Speed GaN-based micro-LED Arrays for Visible Light Communication |
| Tsou, Cheng-Han |
We2C2.7 |
|
A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs |
| Tsuchizawa, Tai |
We2A2.2 |
|
Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide |
| Tsuda, Naoki |
Fr15PP-NS.5 |
|
Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires |
| Tsukui, Masayuki |
We5PP-WBG.12 |
|
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool |
| Turan, Stefan |
Fr1PP-Ga.7 |
|
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector |
| Turski, Henryk |
We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| U A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Uchida, Toru |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Uedono, Akira |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Ueno, Katsunori |
We5PP-WBG.3 |
|
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams |
| Uetake, Kei |
We5PP-WBG.4 |
|
Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation |
| Umezawa, Toshimasa |
We5PP-L.2 |
|
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers |
| Fr3B8.4 |
|
High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band |
| Unterrainer, Karl |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Uren, Michael |
We2D2.7 |
|
[Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Uruno, Aya |
We5PP-O.9 |
|
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation |
| Uryu, Tatsuya |
We5PP-L.7 |
|
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser |
| We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Usami, Shigeyoshi |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Utaka, Katsuyuki |
Fr3A9.2 |
|
Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA |
| Uzdavinys, Tomas |
Fr15PP-No.2 |
|
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth |
| V A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Vaissiere, Nicolas |
Fr15PP-Opt.5 |
|
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV |
| Valdueza, Sirona |
Fr15PP-NS.1 |
|
Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering |
| Fr15PP-Opt.13 |
|
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect |
| Valov, Ilia |
Tu1SC2.1 |
|
Materials for Neuromorphic Computing |
| van Helvoort, Antonius |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Van Heukelom, Michael |
We3B3.3 |
|
[Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers |
| VanMil, Brenda |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| Vardi, Alon |
We1C1.3 |
|
Fin-Width Scaling of Highly-Doped InGaAs Fins |
| We5PP-RF.16 |
|
Modeling the Parasitic Bipolar Effect in InGaAs FinFETs |
| Veit, Peter |
Fr3B9.1 |
|
Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation |
| Verma, Amit |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| Vescan, Andrei |
Fr15PP-No.1 |
|
Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides |
| Vijeyaragunathan, Sangeetha |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Vogt, Patrick |
Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Volders, Cameron |
Fr3C8.5 |
|
Silicene-on-silicide Platform |
| Volz, Sebastian |
We2A2.7 |
|
Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots |
| Vurgaftman, Igor |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| W A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Wada, Osamu |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Waechter, Clemens |
We5PP-Po.2 |
|
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates |
| Wagner, Günter |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Wakejima, Akio |
We5PP-RF.8 |
|
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs |
| Wakimoto, Daiki |
Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Walker, Dennis |
Fr1PP-Ga.19 |
|
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices |
| Walsh, Matthew |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Walukiewicz, Wladek |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Wang, Bin |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Wang, Charles |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Wang, Chi-Wei |
Fr3A9.3 |
|
Optical NAND Logic Gates Using Light Emitting Transistor (LET) |
| Wang, Chih-Wei |
Fr15PP-Opt.11 |
|
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel |
| Wang, Han |
Th1C5.3 |
|
A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity |
| Wang, Han |
Th1C5.2 |
|
Efficient Learning with Ultra-low Power Compound Synaptic Devices |
| Wang, Jian |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Wang, Jiaxing |
We2A2.1 |
|
Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm |
| Wang, Jingshan |
We1D1.6 |
|
Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates |
| We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Wang, Jue |
We2C2.5 |
|
Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region |
| Wang, Lai |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Wang, Quan |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Wang, Xiaojia |
Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Wang, Xiaoliang |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Wang, Xiaowei |
Th2A6.6 |
|
Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes |
| Wang, Xue-Lun |
We5PP-WBG.23 |
|
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap |
| Wang, Yaqiong |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Wang, Yekan |
We4B4.3 |
|
Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces |
| Wang, Yuning |
Fr15PP-Opt.12 |
|
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC |
| Wang, Zhanguo |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Wang, Zijian |
Fr15PP-NS.20 |
|
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons |
| Warren, Michael |
Th1A5.4 |
|
Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region |
| Wasige, Edward |
We2C2.5 |
|
Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region |
| We2C2.1 |
|
[Invited] Mm-wave/THz Multi-Gigabit Wireless Links and Microwave Interfaces - The iBROW Project |
| We5PP-Po.5 |
|
AlGaN/GaN HEMTs with Reduced Self-Heating |
| Watanabe, Katsuyuki |
Th2A6.4 |
|
High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate |
| Wathuthanthri, Ishan |
Th1D5.5 |
|
[Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz |
| Watts, Michael |
Fr3A9.1 |
|
[Invited] Silicon Photonics, Optical Phased Arrays, and LiDAR |
| Webb, James |
Fr3C7.2 |
|
Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy |
| Wei, Dongxia |
We2A2.6 |
|
Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants |
| Weimann, Nils |
We1C1.2 |
|
Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology |
| We2C2.3 |
|
Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection |
| Fr3B9.6 |
|
Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires |
| Weman, Helge |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Wernersson, Lars-Erik |
We1C1.4 |
|
Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process |
| Fr2B7.4 |
|
[Invited] III-V Nanowire MOSFETs: A Path Towards 10 nm High-Performance Transistors |
| Weyers, Markus |
We3D3.5 |
|
MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC |
| White, Mark |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Whiteside, Vincent |
We4A4.1 |
|
Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation |
| Wienecke, Steven |
We2D2.5 |
|
N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias |
| Wildeson, Isaac |
Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Williams, Logan |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Wong, Ken-Tsung |
We5PP-O.1 |
|
All Exciplex Structure of Highly Efficient Tandem WOLEDs |
| Wong, Man Hoi |
Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Worschech, Lukas |
Th2C6.2 |
|
Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells |
| Wostbrock, Neal |
Th2B6.1 |
|
High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology |
| Wouters, Charlotte |
Fr1PP-Ga.5 |
|
Miscibility and Phase Separation in (InxGa1-x)2O3 |
| Fr3F2.1 |
|
Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film |
| Wraback, Michael |
We4B4.5 |
|
Enhanced Deep Ultraviolet Response of SiC APDs |
| We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Fr15PP-No.10 |
|
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6 |
| Fr3B9.4 |
|
Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques |
| Wu, Chao-Hsin |
We5PP-RF.5 |
|
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate |
| We5PP-RF.6 |
|
High Speed GaN-based micro-LED Arrays for Visible Light Communication |
| We5PP-RF.7 |
|
E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation |
| Wu, Jun |
Fr2B7.7 |
|
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD |
| Wu, Shiou-Ming |
We5PP-WBG.18 |
|
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer |
| Fr15PP-No.11 |
|
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs |
| Wu, Xuewang |
Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Wu, Yuh-Renn |
Fr15PP-No.7 |
|
3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects |
| Wuerfl, Joachim |
We3D3.5 |
|
MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC |
| Wunderer, Thomas |
Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Wurm, Christian |
Th1D5.4 |
|
N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers |
| Wuu, Dong |
Fr15PP-Opt.7 |
|
Light Extraction Enhancement of AlGaInP LED by Etching Process |
| X A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Xia, Zhanbo |
Fr3F3.3 |
|
Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs |
| Xiang, Peng |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| We3D3.4 |
|
Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation |
| We5PP-WBG.24 |
|
Defect Control in GaN-on-Si Wafers for Power Electronics Applications |
| Xiao, Hongling |
We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Xie, Jinqiao |
We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Xie, Qingyun |
We5PP-Po.9 |
|
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications |
| Xing, Huili |
Tu1JP1.1 |
|
Welcome Remarks |
| We1D1.2 |
|
MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates |
| We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| We4B4.4 |
|
Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures |
| We5PP-Po.7 |
|
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN |
| Th2D6.6 |
|
Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V |
| Fr3F3.1 |
|
Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3 |
| Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Xing, Weichuan |
We4B4.1 |
|
40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz |
| Xiong, Bing |
We5PP-L.1 |
|
1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array |
| Xu, Ke |
We4D4.3 |
|
[Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials |
| Xu, Xiangang |
We5PP-WBG.13 |
|
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD |
| We5PP-RF.10 |
|
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power |
| Y A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Yagi, Hideki |
Fr15PP-Opt.10 |
|
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure |
| Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Yalamarthy, Ananth Saran |
Fr15PP-Opt.6 |
|
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors |
| Yamada, Hisashi |
We5PP-WBG.23 |
|
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap |
| Yamada, Toshikazu |
We5PP-WBG.16 |
|
Mg Recoil Implantation into GaN with Incident Nitrogen Ion |
| We5PP-WBG.23 |
|
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap |
| Yamaguchi, Koichi |
Fr15PP-NS.12 |
|
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition |
| Yamaguchi, Tomohiro |
Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Yamakoshi, Shigenobu |
Fr1PP-Ga.11 |
|
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer |
| Fr1PP-Ga.10 |
|
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy |
| Fr3F2.5 |
|
Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping |
| Fr3F3.4 |
|
Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation |
| Fr3F3.7 |
|
[Invited] Ga2O3 Vertical Trench SBDs and FETs |
| Yamamoto, Naokatsu |
We5PP-L.2 |
|
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers |
| Fr3B8.4 |
|
High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band |
| Yamamoto, Naoki |
Fr15PP-NS.9 |
|
Investigations of Light Polarization of GaAs/AlGaOx Nanowire |
| Yamaoka, Yuya |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Yamasaki, Yasuo |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Yamashita, Shinpei |
We5PP-RF.17 |
|
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz |
| Yamazaki, Kouichiro |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Yan, Rusen |
We2C2.2 |
|
Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures |
| Yan, Tifei |
We4A4.2 |
|
Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures |
| Yan, Xiaodong |
Th1C5.3 |
|
A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity |
| Yan, Zhao |
Fr3A8.2 |
|
High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy |
| Yanagisawa, Ryoto |
We2A2.7 |
|
Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots |
| Yang, Chan-Shan |
Fr3B9.5 |
|
THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials |
| Yang, Duyoung |
We3B3.1 |
|
Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate |
| Yang, Hua |
Fr15PP-Opt.14 |
|
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band |
| Yang, Hyun-Duk |
We5PP-L.8 |
|
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy |
| Yang, Jianfeng |
Fr3B8.1 |
|
Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure |
| Yang, Joshua |
Tu1SC1.2 |
|
Neuromorphic Computing with Memristive Devices and Arrays |
| Yang, Kyounghoon |
We2C2.4 |
|
Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology |
| We5PP-RF.13 |
|
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications |
| Yang, Shun-Cheng |
We5PP-RF.7 |
|
E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation |
| Yang, Tao |
Th2A6.2 |
|
Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser |
| Yang, Tsung-Han |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Yang, Zhihong |
Th1B5.5 |
|
Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence |
| Yangui, Aymen |
We4A4.2 |
|
Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures |
| Yano, Kosuke |
Fr15PP-NS.2 |
|
Structural Characteristics of GaAs/GaAsBi Nanowires |
| Yano, Yoshiki |
We1B1.2 |
|
High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing |
| Yao, Hsin-Hung |
We1B1.4 |
|
Extreme-high-temperature MOVPE Design and Practice for Nitrides |
| Fr1PP-Ga.1 |
|
Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD |
| Yao, Yong-Zhao |
We1D1.3 |
|
Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods |
| Yasaki, Atsushi |
Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Yates, Luke |
Fr1PP-Ga.14 |
|
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces |
| Ye, Peide |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Yigletu, Fetene |
Th1D5.3 |
|
AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model |
| Yin, Ni |
We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| We5PP-WBG.24 |
|
Defect Control in GaN-on-Si Wafers for Power Electronics Applications |
| Yokota, Naoshige |
We5PP-WBG.4 |
|
Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation |
| Yoneda, Yoshihiro |
Fr3A8.5 |
|
High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems |
| Fr3A9.6 |
|
Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers |
| Yoon, Euijoon |
We2B2.5 |
|
Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN |
| We3B3.1 |
|
Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate |
| We5PP-WBG.10 |
|
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane |
| Yordsri, Visittapong |
Fr15PP-NS.3 |
|
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy |
| Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| York, Krystal |
Fr3C8.3 |
|
Band Gap Tuning Across the Visible Spectrum Without Alloying |
| Yoshida, Akinobu |
Fr2B7.1 |
|
Scaling Effect on Vertical FETs Using III-V Nanowire-Channels |
| Yoshida, Takamasa |
We5PP-L.6 |
|
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si |
| Yoshikawa, Akira |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Fr15PP-Opt.16 |
|
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm |
| Yoshimoto, Masahiro |
Fr1PP-Ga.12 |
|
Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition |
| Younger, Richard |
Fr3A9.7 |
|
Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays |
| Youtsey, Chris |
We1D1.5 |
|
High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates |
| Yu, Chuan-Yue |
We5PP-WBG.18 |
|
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer |
| Yu, Kin Man |
We5PP-WBG.17 |
|
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb |
| Yu, Shui-Qing |
Th2A6.5 |
|
[Invited] Development of Si-based GeSn Laser |
| Yuan, Hui-Hong |
Th2A6.2 |
|
Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser |
| Yuan, Mengyang |
We3D3.3 |
|
Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications |
| Yukimune, Mitsuki |
Fr15PP-NS.6 |
|
Molecular Beam Epitaxial Growth of GaInNAs Nanowires |
| Fr15PP-NS.7 |
|
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent |
| Z A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
| Zanoni, Enrico |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Zarrasvand, Azin |
Fr3B9.8 |
|
200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene |
| Zederbauer, Tobias |
We3A3.3 |
|
Substrate-transferred Crystalline Coatings |
| Zederbauer, Tobias |
Th1A5.2 |
|
Evolution of Material Systems for THz Quantum Cascade Lasers |
| Zegaoui, Malek |
Fr2A7.5 |
|
Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices |
| Zeng, Joe |
Fr3A8.1 |
|
[Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth |
| Zeng, Yuping |
We5PP-RF.15 |
|
DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon |
| Fr15PP-NS.19 |
|
HSQ Etching Resistance Dependence on Substrate |
| Fr15PP-NS.20 |
|
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons |
| Zettler, Johannes |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Zettler, Thomas |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Zhang, Baoshun |
We3D3.1 |
|
Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment |
| Zhang, Jie |
Fr15PP-NS.19 |
|
HSQ Etching Resistance Dependence on Substrate |
| Fr15PP-NS.20 |
|
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons |
| Zhang, Jing |
We3B3.4 |
|
Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs |
| Zhang, Li |
We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Zhang, Liyang |
We2D2.2 |
|
High Performance 820V GaN-on-Si PiN Diodes |
| We2B2.1 |
|
High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application |
| We5PP-WBG.24 |
|
Defect Control in GaN-on-Si Wafers for Power Electronics Applications |
| Zhang, Siyuan |
We4C4.3 |
|
Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides |
| Zhang, Xiaozhong |
We5PP-O.5 |
|
Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device |
| Zhang, Ya |
Th2C6.3 |
|
Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling |
| Zhang, Yingying |
Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Zhang, Yong |
We1A1.4 |
|
[Invited] RS-PbTe/ZB-CdTe (111) Heterostructure an Inter-Diffusion Free Interface with a High Mobility Two-Dimensional Electron Gas (2DEG) Showing Quantum Oscillations |
| Zhang, Yonggang |
Fr15PP-Opt.1 |
|
Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP |
| Fr15PP-Opt.2 |
|
Doping Engineering of Extended Wavelength InGaAs Photodetectors |
| Zhang, Yuhao |
We1D1.1 |
|
GaN Junction Barrier Schottky Diodes by Selective Ion Implantation |
| Zhang, Zexuan |
Fr3F3.5 |
|
Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors |
| Zhao, Hongping |
Fr3F3.2 |
|
Electronic Transport of Donors and Acceptors in β-Ga2O3 |
| Zhao, Huan |
Th1C5.2 |
|
Efficient Learning with Ultra-low Power Compound Synaptic Devices |
| Zhao, Xin |
We5PP-RF.16 |
|
Modeling the Parasitic Bipolar Effect in InGaAs FinFETs |
| Zhao, Yuji |
We2D2.1 |
|
1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates |
| We3D3.1 |
|
Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment |
| We5PP-WBG.20 |
|
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes |
| We5PP-Po.12 |
|
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices |
| Th2D6.4 |
|
Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates |
| Th2B6.7 |
|
Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells |
| Fr1PP-Ga.15 |
|
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms |
| Fr2A7.4 |
|
Thermal Reliability Analysis of InGaN Solar Cells |
| Zhao, Zhanxiang |
Fr15PP-NS.22 |
|
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry |
| Zhao, Zhibo |
We3B3.2 |
|
Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs |
| We5PP-WBG.19 |
|
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy |
| Th1B5.2 |
|
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes |
| Zhou, Hong |
Th2D6.5 |
|
β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate |
| Zhou, Leidang |
Fr1PP-Ga.3 |
|
X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes |
| Zhu, Jie |
Th2D6.2 |
|
Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR) |
| Zollner, Christian |
We5PP-WBG.21 |
|
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED |
| Zon, Zon |
Fr3B8.5 |
|
Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy |
| Zorn, Martin |
We5PP-L.5 |
|
In-situ and Ex-Situ Metrology for VCSEL Epitaxy |
| Zota, Cezar |
We3C3.3 |
|
First Demonstration of InGaAs FinFETs on Si for RF Applications |
| Zubair, Ahmad |
Fr3C8.2 |
|
Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack |
