CSW 2018: Program

8:30 Optical and Electrical Properties of Mg-doped High Al-content AlGaN Grown by Molecular Beam Epitaxy: Xianhe Liu (University of Michigan, Ann Arbor, USA & McGill University, Canada); Kishwar Mashooq, Jin Shin, David Laleyan and Ayush Pandey (University of Michigan, Ann Arbor, USA); Zetian Mi (University of Michigan, USA)
8:45 High Quality Large Diameter AlN-on-sapphire Templates by High Temperature N2 Annealing: Akira Mishima, Yuji Tomita, Yuya Yamaoka, Yoshiki Yano, Toshiya Tabuchi and Koh Matsumoto (Taiyo Nippon Sanso Corporation, Japan); Mayank Bulsara (Matheson Tri-Gas & Taiyo Nippon Sanso, USA); Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)
9:00 [Invited] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing: Kanako Shojiki, Xiaotong Liu and Shoya Kawai (Mie University, Japan); Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)
9:30 Extreme-high-temperature MOVPE Design and Practice for Nitrides: Kuang-Hui Li and Haiding Sun (KAUST, Saudi Arabia); Che-Hao Liao (National Yunlin University of Science and Technology, Taiwan); Hsin-Hung Yao (KAUST, Saudi Arabia); William Holden, Tom Salagaj, Aaron Feldman, Gary Provost and Gary Tompa (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
9:45 Electrical and Optical Properties of Heavily Ge-Doped AlGaN: Rodrigo Blasco (Univesidad de Alcala, Spain); Akhil Ajay (CEA-Grenoble, France); Katharina Lorentz (IPFN, Portugal); Luís Manuel Cerqueira Lopes Alves (C2TN, Portugal); Eva Monroy (CEA-Grenoble, France)

We1C1: RF (III-V)

Room: Salon T

Chair: Eduardo Chumbes (Raytheon, USA)

8:30 [Invited] Enhancement in Fmax by Adopting an Extended Drain-Side Recess Structure in InAlAs/InGaAs HEMTs: Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Masaru Sato, Yasuhiro Nakasha and Naoki Hara (Fujitsu Laboratories Ltd., Japan)
9:00 Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred-Substrate InP DHBT MMIC Technology: Dimitri Stoppel, Michael Hrobak, Alexander Külberg, Saskia Schönfeld, Dirk Rentner, Olaf Krüger, Ksenia Nosaeva, Mohamed Brahem and Sebastian Boppel (Ferdinand-Braun-Institut, Germany); Nils Weimann (University of Duisburg-Essen, Germany)
9:15 Fin-Width Scaling of Highly-Doped InGaAs Fins: Alon Vardi and Jesus del Alamo (MIT, USA)
9:30 Vertical, High-Performance 12 nm Diameter InAs Nanowire MOSFETs on Si Using an All III-V CMOS Process: Adam Jönsson, Johannes Svensson and Lars-Erik Wernersson (Lund University, Sweden)
9:45 Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width: Wenjie Lu and Jesus del Alamo (MIT, USA)

We1D1: Power(Bulk GaN)

Room: DR 5&6

Chair: Elison Matioli (EPFL, Switzerland)

8:30 GaN Junction Barrier Schottky Diodes by Selective Ion Implantation: Yuhao Zhang (Massachusetts Institute of Technology, USA); Zhihong Liu (Singapore-MIT Alliance for Research and Technology, Singapore); Marko J Tadjer (US Naval Research Laboratory, USA); Daniel Piedra (Massachusetts Institute of Technology, USA); Christopher Hatem (Applied Materials-Varian, USA); Xiang Gao (IQE LLC, USA); Travis Anderson, Lunet Luna, Andrew Koehler, Boris Feigelson and Karl Hobart (Naval Research Laboratory, USA); Tomas Palacios (Massachusetts Institute of Technology, USA)
8:45 MBE Grown NPN GaN/InGaN HBTs on bulk-GaN Substrates: Kazuki Nomoto (Cornell University, USA); Henryk Turski (PAS, Poland); Grzegorz Muziol (Institute of High Pressure Physics, PAS, Poland); Zongyang Hu and Shyam Bharadwaj (Cornell University, USA); Marcin Siekacz (Institute of High Pressure Physics, PAS, Poland); Czeslaw Skierbiszewski (Unipress, Poland); Debdeep Jena and Huili Xing (Cornell University, USA)
9:00 Investigation of the Origin of the Leakage of P-N Diodes on a Free-Standing GaN Substrate Using the 3DAP and LACBED Methods: Shigeyoshi Usami (Nagoya University, Japan); Yoshihiro Sugawara, Yong-Zhao Yao and Yukari Ishikawa (Japan Fine Ceramics Center, Japan); Norihito Mayama and Kazuya Toda (Toshiba Nanoanalysis Corpotration, Japan); Yuto Ando, Atsushi Tanaka, Kentaro Nagamatsu, Manato Deki, Maki Kushimoto, Shugo Nitta, Yoshio Honda and Hiroshi Amano (Nagoya University, Japan)
9:15 1.1 kV Regrown AlGaN/GaN Channel Based Vertical Trench MOSFET: Chirag Gupta, Silvia H Chan and Anchal Agarwal (University of California Santa Barbara, USA); Nirupam Hatui, Stacia Keller and Umesh Mishra (UCSB, USA)
9:30 High-Performance Vertical GaN P-N Diodes Fabricated with Epitaxial Lift-Off from GaN Substrates: Jingshan Wang (University of Notre Dame & Micron Technology, USA); Lina Cao (University of Notre Dame, USA); Robert McCarthy (MicroLink Devices, USA); Chris Youtsey (MicroLink Devices, Inc., USA); Louis Guido (Virginia Tech, USA); Jinqiao Xie and Edward Beam (Qorvo, Inc., USA); Patrick Fay (University of Notre Dame, USA)
9:45 Measurement of Electron and Hole Impact Ionization Coefficients in GaN P-N Junctions on Native GaN Substrates: Lina Cao (University of Notre Dame, USA); Jingshan Wang (University of Notre Dame & Micron Technology, USA); Galen Harden, Anthony Hoffman and Patrick Fay (University of Notre Dame, USA)

Wednesday, May 30 10:00 - 10:30

WeCB1: Coffee Break

Wednesday, May 30 10:30 - 12:30

We2A2: Lasers

Room: Salon M

Chairs: Eric Tournié (Université de Montpellier, France), Marcelo Davanco (NIST, USA)

10:30 Single-Mode Buried InGaP Aperture VCSEL Emitting at 980 nm: Jiaxing Wang and Jonas Kapraun (University of California Berkeley, USA); Neil Cabello and Philippe Tingzon (University of the Philippines Diliman, USA); Kevin Cook, Jipeng Qi, Emil Kolev and Connie J. Chang-Hasnain (University of California Berkeley, USA)
10:45 Single Mode Operation of Multiple Phase-Shift Grating Membrane Buried Heterostructure Lasers Integrated on Silicon Nanowire Waveguide: Takuma Aihara (NTT Device Technology Laboratories, Japan); Tatsurou Hiraki (NTT, Japan); Koji Takeda, Koichi Hasebe, Takuro Fujii and Tai Tsuchizawa (NTT Corporation, Japan); Takaaki Kakitsuka (Japan); Shinji Matsuo (NTT Corporation, Japan)
11:00 Failure of the Current Modulation Driven Linewidth Broadening Factor for Analyzing the Optical Linewidth Behavior of Quantum Dot Lasers: Heming Huang (Télécom ParisTech & Université Paris-Saclay, France); Jianan Duan (Télécom ParisTech, Université Paris-Saclay, France); Zhenguo Lu and Philip Poole (National Research Council Canada, Canada); Frédéric Grillot (Télécom Paristech, Université Paris-Saclay, France)
11:15 Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection: Xiangmeng LU and Yasuo Minami (Tokushima University, Japan); Naoto Kumagai (National Institute of Advanced Industrial Science and Technology, Japan); Ken Morita (Chiba University, Japan); Takahiro Kitada (Tokushima University, Japan)
11:30 [Invited] Quantum-Dot Lasers on Silicon: John E Bowers (University of California, USA)
12:00 Improved Optical Properties in Plasmonic Silicon-doped InAs Using Bismuth Surfactants: Dongxia Wei, Patrick Sohr and Stephanie Law (University of Delaware, USA)
12:15 Enhancement of Thermoelectric Performance of Si Membrane by Al Silicide Nanodots: Masahiro Nomura (The University of Tokyo, Japan); Anthony George (The University of Tokyo); Ryoto Yanagisawa (The University of Tokyo, Japan); Sebastian Volz (CNRS, France)

We2B2: Wide Band Gap (GaN on Si)

Room: DR 3&4

Chair: Hideto Miyake (Mie University & Graduate School of Regional Innovation Studies, Japan)

10:30 High Quality 200 mm GaN-on-Si Blue LED for uLED Display Application: Liyang Zhang, Kai Liu, Peng Xiang, Hongjing Huo, Ni Yin and Kai Cheng (Enkris Semiconductor, China)
10:45 Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si: Atsunori Tanaka, Woojin Choi, Renjie Chen and Shadi Dayeh (University of California, San Diego, USA)
11:00 [Invited] GaN-on-Si Laser Diodes and Normally-Off HEMTs: Qian Sun (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China)
11:30 Realization of MOCVD GaN Tunnel Junction Contacts in Large Area LEDs: Abdullah Alhassan and Cheyenne Lynsky (University of California, Santa Barbara, USA); Ahmed Y. Alyamani (King Abdulaziz City for Science and Technology, Saudi Arabia); Shuji Nakamura (University of California Santa Barbara, USA); Steven DenBaars (University of California, Santa Barbara)
11:45 Fabrication of Nano-Cavity Patterned Sapphire Substrates and Their Application to the Growth of GaN: Donghyun Lee, Jehong Oh, Seungmin Lee, Giwoong Kim, Jongmyeong Kim, Jeonghwan Jang and Daeyoung Moon (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
12:00 [Invited] Electrically-Injected GaN-based VCSELs: Tetsuya Takeuchi (Meijo University, Japan)

We2C2: RF (Resonat Tunneling Diodes)

Room: Salon T

Chair: Nils Weimann (University of Duisburg-Essen, Germany)

10:30 [Invited] Mm-wave/THz Multi-Gigabit Wireless Links and Microwave Interfaces - The iBROW Project: Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
11:00 Room Temperature Microwave Oscillators Enabled by Resonant Tunneling Transport in III-Nitride Heterostructures: Jimy Encomendero and Rusen Yan (Cornell University, USA); Amit Verma (Indian Institute of Technology Kanpur, India); SM Islam and Vladimir Protasenko (Cornell University, USA); Sergei Rouvimov and Patrick Fay (University of Notre Dame, USA); Debdeep Jena and Huili Xing (Cornell University, USA)
11:15 Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection: Khaled Arzi (University of Duisburg-Essen, Germany); Safumi Suzuki (Tokyo Institute of Technology, Japan); Daniel Erni and Nils Weimann (University of Duisburg-Essen, Germany); Masahiro Asada (Tokyo Institute of Technology, Japan); Werner Prost (University of Duisburg-Essen, Germany)
11:30 Output Power Characteristics of Sub-THz Differential Oscillators Using an RTD Pair Topology: Maengkyu Kim (Korea Advanced Institute of Science and Technology, Korea (South)); Se-Mi Kim and Jae-Hyung Jang (Gwangju Institute of Science and Technology, Korea (South)); Kyounghoon Yang (KAIST, Korea (South))
11:45 Experimental Demonstration of a Resonant Tunneling Diode Device Array with a Single Negative Differential Conductance Region: Abdullah Al-Khalidi, Jue Wang, Khalid Alharbi and Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
12:00 Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes: Masanori Nagase, Tokio Takahashi and Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
12:15 A Non-alloyed Au-free Ti/AlSiCu Ohmic Contact for n-InGaAs MOSFETs: Jen-Inn Chyi, Shan-Chun Hsu, Cheng-Han Tsou and Wei Jen Hsueh (National Central University, Taiwan); Szu Hung Chen (National Nano Device Laboratories, Taiwan)

We2D2: Power (GaN)

Room: DR 5&6

Chair: Rebecca L Peterson (University of Michigan, USA)

10:30 1-kV-class AlN Schottky Barrier Diodes on Sapphire Substrates: Houqiang Fu (Arizona state University, USA); Xuanqi Huang, Hong Chen, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
10:45 High Performance 820V GaN-on-Si PiN Diodes: Riyaz Mohammed Abdul Khadar (École Polytechnique Federale de Lausanne, Switzerland); Chao Liu (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Reza Soleimanzadeh (EPFL, Switzerland); Liyang Zhang, Peng Xiang and Kai Cheng (Enkris Semiconductor, China); Elison Matioli (EPFL, Switzerland)
11:00 2 kV GaN-on-Si SBDs with a Slanted Tri-Gate Architecture: Jun Ma and Elison Matioli (École polytechnique fédérale de Lausanne (EPFL), Switzerland)
11:15 Vertical 18-Um-Thick GaN Trench Gate MISFETs on Si: Woojin Choi, Atsunori Tanaka, Renjie Chen and Shadi Dayeh (University of California, San Diego, USA)
11:30 N-Polar GaN HEMTs for High Voltage Switching Applications Demonstrating Negligible Dispersion at 450 V Quiescent Bias: Onur Koksaldi, Jeffrey Haller, Haoran Li, Nirupam Hatui and Brian Romanczyk (University of California Santa Barbara, USA); Matthew Guidry (University of California, Santa Barbara, USA); Steven Wienecke, Jr, Stacia Keller and Umesh Mishra (University of California Santa Barbara, USA)
11:45 Scaling of GaN HEMTs Thermal Transient Characteristics: Adrien Cutivet (UniversitÌé de Sherbrooke, Canada); Meriem Bouchilaoun (University of Sherbrooke, Canada); Bilal Hassan (UniversitÌé de Sherbrooke & University of Management & Technology Lahore Pakistan, Canada); Christophe Rodriguez (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); François Boone and Hassan Maher (Université de Sherbrooke, Canada)
12:00 [Invited] Leaky Dielectric Model for Dynamic RON in GaN/AlGaN Power Transistors: Michael J Uren and Martin Kuball (University of Bristol, United Kingdom (Great Britain))

Wednesday, May 30 12:30 - 1:30

WeLB: Lunch Break

Wednesday, May 30 1:30 - 3:00

We3A3: Narrow Band Gap

Room: Salon M

Chair: John E Bowers (University of California, USA)

1:30 [Invited] Sb-based IR Detector and Emitter Materials: Eric Tournié (University of Montpellier)
2:00 High Quality InP Epitaxially Grown on (001) Silicon for On-Chip Lasers: Bei Shi (The Hong Kong University of Science and Technology, Hong Kong); Qiang Li and Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:15 Substrate-transferred Crystalline Coatings: Garrett Cole (Crystalline Mirror Solutions LLC & Crystalline Mirror Solutions GmbH, USA); David Follman, Paula Heu and Gar-Wing Truong (Crystalline Mirror Solutions LLC, USA); Christoph Deutsch, Dominic Bachmann, Tobias Zederbauer and Ashish Rai (Crystalline Mirror Solutions GmbH, Austria); Mark White (Crystalline Mirror Solutions LLC, USA); Markus Aspelmeyer (Crystalline Mirror Solutions GmbH, Austria)
2:30 [Invited] High-quality Growth of Chalcogenide Topological Insulators: Stephanie Law (University of Delaware, USA)

We3B3: Wide Band Gap

Room: DR 3&4

Chair: Tetsuya Takeuchi (Meijo University, Japan)

1:30 Anisotropic Strain and Linearly Polarized Photoluminescence of C-Plane GaN Layers on Stripe-Shaped Cavity-Engineered Sapphire Substrate: Jongmyeong Kim, Daeyoung Moon and Duyoung Yang (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
1:45 Carrier Transport and Deep Level Defects Lead to Delayed Cathodoluminescence in InGaN/GaN LEDs: Akshay Singh (Massachusetts Institute of Technology, USA); Zhibo Zhao (Massachusetts Institute of Technology`, USA); Silvija Gradecak (Massachusetts Institute of Technology, USA)
2:00 [Invited] Materials Challenges of AlGaN-based Power Electronics and UV Lasers: Mary Crawford, Andrew Allerman, Andrew Armstrong, Robert Kaplar, Greg Pickrell, Jeramy Dickerson, Michael Smith and Karen Cross (Sandia National Laboratories, USA); Vincent Abate (Sandia National Laboratory, USA); Caleb Glaser and Michael Van Heukelom (Sandia National Laboratories, USA)
2:30 Comparative Study of Electroluminescence in GaN and AlGaN QW Sub-300nm DUV LEDs: Shyam Bharadwaj (Cornell University, USA); Cheng Liu (Rochester Institute of Technology, USA); Craig Moe and James Grandusky (Crystal IS, Inc., USA); Akira Yoshikawa and Jumpei Kasai (Asahi Kasei Corporation, USA); SM Islam and Vladimir Protasenko (Cornell University, USA); Leo Schowalter (Crystal IS, Inc., USA); Jing Zhang (Rochester Institute of Technology, USA); Debdeep Jena and Huili Xing (Cornell University, USA)
2:45 Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films: Matthew Laurent (UC Davis, USA); Stacia Keller and Umesh Mishra (UCSB, USA); Srabanti Chowdhury (UC Davis & ASU, USA)

We3C3: RF (Narrow Band Gap)

Room: Salon T

Chair: Lars-Erik Wernersson (Lund University, Sweden)

1:30 [Invited] III-V CMOS: Quo Vadis?: Jesus del Alamo (MIT, USA)
2:00 Fabrication of InGaAs Nanosheet Transistors with Regrown Source: Toru Kanazawa, Kazuto Ohsawa, Tomohiro Amemiya, Nobukazu Kise, Ryosuke Aonuma and Yasuyuki Miyamoto (Tokyo Institute of Technology, Japan)
2:15 First Demonstration of InGaAs FinFETs on Si for RF Applications: Cezar Zota, Clarissa Convertino and Marilyne Sousa (IBM Research Zurich, Switzerland); Daniele Caimi (Zurich IBM Research Center, Switzerland); Lukas Czornomaz (IBM Research Zurich, Switzerland)
2:30 Low Capacitance InGaAs Nanowire MOSFETs for High-Frequency Applications: Fredrik Lindelöw, Lasse Södergren and Erik Lind (Lund University, Sweden)
2:45 Mobility Extraction in Thin-Channel InGaAs MOSFETs: Xiaowei Cai (Massachusetts Institute of Technology, USA); Jesus Grajal (Universidad Politécnica de Madrid, Spain); Jesus del Alamo (MIT, USA)

We3D3: Power (GaN)

Room: DR 5&6

Chair: Michael J Uren (University of Bristol, United Kingdom (Great Britain))

1:30 Normally-off p-GaN/AlGaN/GaN HEMTs by Hydrogen Plasma Treatment: Kai Fu (Arizona State University, USA); Ronghui Hao (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, P.R. China); Baoshun Zhang (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China); Yuji Zhao (Arizona state University, USA)
1:45 Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer: Meriem Bouchilaoun (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); Christophe Rodriguez and Abdelatif Jaouad (University of Sherbrooke, Canada); Hassan Maher (Université de Sherbrooke, Canada)
2:00 Tungsten-based Ion Implanted Ohmic Contacts in GaN HEMTs for High Temperature Applications: Mengyang Yuan and Tomas Palacios (Massachusetts Institute of Technology, USA)
2:15 Normally-off p-GaN Gate HEMT with Hydrogen Implantation Passivation: Qifeng Lyu and Huaxing Jiang (Hong Kong University of Science and Technology, Hong Kong); Peng Xiang and Kai Cheng (Enkris Semiconductor, China); Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:30 MOVPE Growth of AlN/GaN/AlN HFET Structures on 4H-SiC: Frank Brunner, Oliver Hilt, Anna Reis and Joachim Wuerfl (Ferdinand-Braun-Institut, Germany); Markus Weyers (Ferdinand-Braun-Institut Berlin, Germany)
2:45 Vertical GaN-on-Si MOSFET with Monolithically Integrated Freewheeling Schottky Barrier Diode: Chao Liu (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Riyaz Mohammed Abdul Khadar (École Polytechnique Federale de Lausanne, Switzerland); Elison Matioli (EPFL, Switzerland)
3:00 A New Generation of GaN Devices on 8-Inch Diameter, Thermal-Expansion Matched Substrates: Vladimir Odnoblyudov, Ozgur Aktas and Shari Farrens (Qromis Inc., USA); Cem Basceri (Qromis Inc, USA); Travis Anderson and Lunet Luna (Naval Research Laboratory, USA); Marko J Tadjer (US Naval Research Laboratory, USA); Andrew Koehler, Karl Hobart and Fritz Kub (Naval Research Laboratory, USA)

Wednesday, May 30 3:00 - 3:30

WeCB2: Coffee Break

Wednesday, May 30 3:30 - 4:45

We4A4: Lasers

Room: Salon M

Chair: Stephanie Law (University of Delaware, USA)

3:30 Inhibited Hot-Carrier Cooling in Type-II InAs/AlAsSb Quantum Wells: Controlled Decoupling of Electron-Phonon Relaxation: Hamidreza Esmaielpour and Vincent Whiteside (University of Oklahoma, USA); Herath Piyathilaka (West Virginia University, USA); Sangeetha Vijeyaragunathan and Bin Wang (University of Oklahoma, USA); Echo Adcock-Smith and Kenneth Roberts (University of Tulsa, USA); Tetsuya Mishima and Michael Santos (University of Oklahoma, USA); Alan Bristow (West Virginia University, USA); Ian Sellers (University of Oklahoma, USA)
3:45 Thermionic Cooling Effect in AlGaAs/GaAs Heterostructures: Aymen Yangui, Tifei Yan, Marc Bescond, Naomi Nagai and Kazuhiko Hirakawa (University of Tokyo, Japan)
4:00 [Invited] High-Contrast Gratings in VCSELs: Connie Chang-Hasnain (UC Berkeley, USA)
4:30 Stabilizing Color Chromaticity of RGB Light-emitting Diodes Using Monolithically-Integrated Photodetectors: Hoi Wai Choi, Kwai Hei LI and Haitao Lu (The University of Hong Kong, Hong Kong)

We4B4: Wide Band Gap

Room: DR 3&4

Chair: Mary Crawford (Sandia National Laboratories, USA)

3:30 40-nm-Gate GaN-on-Si HEMT with fT of 250 GHz: Weichuan Xing (Nangyang Technological University, Singapore); Zhihong Liu (Xidian University, China); Kumud Ranjan (Nanyang Technological University, Singapore); Yu Gao (Singapore-MIT Alliance for Research and Technology Center, Singapore); Geok Ing Ng (NTU, Singapore); Tomas Palacios (Massachusetts Institute of Technology, USA)
3:45 Using Nanopatterns to Reduce Thermal Resistance at Diamond-Silicon Interfaces: Zhe Cheng (Georgia Institute of Technology, USA); Tingyu Bai, Yekan Wang and Chao Li (UCLA, USA); Tatyana Feygelson (Naval Research Laboratory, USA); Marko J Tadjer and Bradford Pate (US Naval Research Laboratory, USA); Brian M. Foley and Baratunde Cola (Georgia Institute of Technology, USA); Mark Goorsky (University of California, Los Angeles, USA); Karl Hobart (Naval Research Laboratory, USA); Samuel Graham, Jr (Georgia Institute of Technology & Oak Ridge National Laboratory, USA)
4:00 Molecular Beam Epitaxial Growth of Scandium Nitride and Heterostructures: Joseph Casamento, Debdeep Jena and Huili Xing (Cornell University, USA)
4:15 Enhanced Deep Ultraviolet Response of SiC APDs: Anand Sampath, Stephen Kelley and Jeremy Smith (US Army Research Lab, USA); Ryan Enck (US Army Research Laboratory, USA); Brenda VanMil (US Army Research Lab, USA); Yaojia Chen and Joe C. Campbell (University of Virginia, USA); Michael Wraback and Gregory Garrett (US Army Research Lab, USA)

We4C4: Organic Semiconductors

Room: Salon T

Chair: David Gundlach (National Institute of Standards and Technology, USA)

3:30 [Invited] Microstructure and Morphology Measurements for Organic Electronics: Dean DeLongchamp (National Institute of Standards and Technology, USA)
4:00 The Role of Higher Order Effects in Rubrene/C60 OLEDs: Sebastian Engmann (National Institute of Standards and Technology, USA); Adam Barito, Emily Bittle and Lee Richter (National Institute of Standards and Technology); Chris Giebink (The Pennsylvania State University, USA); David Gundlach (National Institute of Standards and Technology, USA)
4:15 Impact of Organic Dopants on Monolayer Transitional Metal Dichalcogenides: Siyuan Zhang, Heather Hill, Angela Hight Walker, Christina Hacker and Sujitra Pookpanratana (National Institute of Standards and Technology, USA)
4:30 Growth of Molecularly Doped Organic Single Crystal by a Novel Method Using Electrospray and Low Vapor Pressure Solvent: Keita Takeuchi (Sophia University, Japan)

We4D4: Novel Materials (2D Materials)

Room: DR 5&6

Chair: John Heron (University of Michigan - Ann Arbor, USA)

3:30 [Invited] High Hole Mobility, 3D Vertical Integration Compatible WSe2 FETs Grown by MBE on ALD Oxides: Christopher Hinkle (University of Texas at Dallas, USA)
4:00 Van Der Waals Growth of h-BN/graphene Heterostructures Using Molecular Beam Epitaxy: Martin Heilmann, Siamak Nakhaie and Michael Hanke (Paul-Drude-Institut für Festkörperelektronik, Germany); Muhammad Bashouti (Ben-Gurion University of the Negev, Israel); Marcelo Lopes and Henning Riechert (Paul-Drude-Institut für Festkörperelektronik, Germany)
4:15 [Invited] Electric Double Layer Dynamics in Graphene FETs: Using Ions to Control Transport in Two-Dimensional Materials: Susan Fullerton and Ke Xu (University of Pittsburgh, USA); Md Mahbubul Islam and David Guzman (Purdue University, USA); Alan Seabaugh (University of Notre Dame, USA); Alejandro Strachan (Purdue University, USA)

Wednesday, May 30 5:00 - 6:30

We5PP-L: Poster Session - Lasers

Room: Morss Hall(50-140)

1.3 Micron 8-Wavelength Laterally Coupled Distributed Feedback Laser Array: Ankang Li, Jian Wang, Changzheng Sun, Yaqiong Wang, Bing Xiong, Yi Luo, Zhibiao Hao, Yanjun Han, Lai Wang and Hongtao Li (Tsinghua University, China)
Influence of Highly Stacked Layer Numbers in Quantum-Dot Lasers: Atsushi Matsumoto and Kouichi Akahane (National Institute of Information and Communications Technology, Japan); Toshimasa Umezawa (NICT, Japan); Shinya Nakajima and Naokatsu Yamamoto (National Institute of Information and Communications Technology, Japan)
Continuously Tunable Colloidal Quantum Dot Distributed Feedback Lasers Integrated on Chirped Grating: Hyunho Jung, Changhyun Han and Hanbit Kim (Seoul National University, Korea (South)); Yeonsang Park and Kyung-Sang Cho (Samsung Advanced Institute of Technology, Korea (South)); Heonsu Jeon (Seoul National University, Korea (South))
Wet-transfer of Colloidal Quantum Dot Thin Films and Its Application: Changhyun Han, Hyunho Jung, Jongho Lee and Myungjae Lee (Seoul National University, Korea (South)); Yeonsang Park and Kyung-Sang Cho (Samsung Advanced Institute of Technology, Korea (South)); Heonsu Jeon (Seoul National University, Korea (South))
In-situ and Ex-Situ Metrology for VCSEL Epitaxy: Volker Blank (LayTec AG, Germany); Martin Zorn (JENOPTIK Diode Lab GmbH, Germany); Christian Kaspari, Joachim Rest and Johannes K Zettler (LayTec AG, Germany); Kolja Haberland (LayTec GmbH, Germany); Thomas Zettler (LayTec AG, Germany)
Reduction of Lasing Wavelength Variation Due to Injection Current into GaInAsP/InP Membrane Distributed-Reflector Laser Bonded on Si: Weicheng Fang, Tatsuya Uryu, Daisuke Inoue, Nagisa Nakamura, Takamasa Yoshida, Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Introduction of Ridge-Waveguide Structure for Low-Power Operation of GaInAsP/InP Membrane Distributed-Reflector Laser: Nagisa Nakamura, Tatsuya Uryu, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Temperature-insensitive InGaAs/InAlAs Quantum Cascade Lasers Using Metal-Organic Vapor Phase Epitaxy: Dong Hak Kim, Dong-Hwan Jun, Hae Yong Jeong, Young-Jin Jeon and Young-Su Choi (KANC, Korea (South)); Jungho Kim (Kyung Hee University, Korea (South)); JoonHyun Kang (Korea Institute of Science and Technology, Korea (South)); Hyun-Duk Yang (KIST, Korea (South)); Jindong Song (Korea Institute of Science & Technology, Korea (South)); Il Ki Han (KIST, Korea (South))
Investigation of Thermo-Optic Wavelength Tuning Techniques of Hybrid III-V/SOI DFB Lasers for LiDAR Applications: Moataz Eissa and Junichi Suzuki (Tokyo Instittue of Technology, Japan); Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)

We5PP-O: Poster Session - Organic and Novel Semiconductors

Room: Morss Hall(50-140)

All Exciplex Structure of Highly Efficient Tandem WOLEDs: Wen-Yi Hung and Pin-Yi Pin-Yi Chiang (National Taiwan Ocean University, Taiwan); Ken-Tsung Wong (National Taiwan University, Taiwan); Chih-Hao Chang (Yuan Ze University, Taiwan)
GaZnO-based Anode with Low Refractive Index for Organic Light-Emitting Diodes: Chih-Hao Chang, Po-Chen Chiu, Hao-Hsuan Chiu and Yi-Ning Lai (Yuan Ze University, Taiwan); Wen-Yi Hung (National Taiwan Ocean University, Taiwan)
Efficient TADF-based Organic Light-Emitting Diodes Using Donor-Acceptor-Donor Borylated Compounds: Chih-Hao Chang (Yuan Ze University, Taiwan); Chin-Wei Lu and Chih-Chieh Tsai (Providence University, Taiwan); Yu-Chien Hsh, Chun-Han Lin and Chia-Wei Liao (Yuan Ze University, Taiwan)
Oxide/metal/oxide Based-Transparent Conductive Electrodes for Highly Flexible and Transparent ReRAM: Byeong Ryong Lee, Ju Hyun Park and Tae Geun Kim (Korea University, Korea (South))
Silicon Based Magnetoresistance and Non-Volatile Spin Logic-Memory Device: Xiaozhong Zhang and Zhaochu Luo (Tsinghua University, China)
Effect of Schottky Interfaces in Yttria Based Memristive Devices: Mangal Das (Manipal University Jaipur, India); Amitesh Kumar (National Institute of Technology Patna, India); Rohit Singh (Shiv Nadar University, India); Md Arif Khan (Indian Institute of Technology Indore, India); Biswajit Mandal (Centre for Advanced Studies, Lucknow, India); Shaibal Mukherjee (Indian Institute of Technology Indore, India)
Dual Ion Beam Sputtered Novel Resistive Memory Device Exhibiting Memristive Behavior: Amitesh Kumar (National Institute of Technology Patna, India); Mangal Das (Manipal University Jaipur, India); Md Arif Khan (Indian Institute of Technology Indore, India); Rohit Singh (Shiv Nadar University, India); Vivek Garg (Indian Institute of Technology, Indore, India); Abhinav Kranti and Shaibal Mukherjee (Indian Institute of Technology Indore, India)
Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing: Andrew Stephan, Jiaxi Hu and Steven Koester (University of Minnesota, USA)
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation: Aya Uruno and Masakazu Kobayashi (Waseda University, Japan)

We5PP-Po: Poster Session - Power Devices

Room: Morss Hall(50-140)

3.3-mΩ·cm2 GaN-based Vertical Trench MOSFET with Threshold Voltage Reaching 6.2 V: Xing Lu (South China University of Technology, China)
Temperature Dependent Performance of GaN HEMT on Silicon and Bulk GaN Substrates: Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani and Mohammed Alomari (Institute for Microelectronics Stuttgart, Germany); Michael Heuken (AIXTRON SE, Germany); Clemens Waechter and Thomas Bergunde (AZUR SPACE Solar Power GmbH, Germany); Joachim Burghartz (Institut für Mikroelektronik Stuttgart, Germany)
Study of AlGaN/GaN Schottky Barrier Diodes Combined Anode Metal with p-GaN Layer and Ohmic Contact: Yi-Sheng Chang, Bo-Hong Li, Wang Hsiang-Chun and Hsien-Chin Chiu (Chang Gung University, Taiwan); Hsueh Kuang-Po (Vanung University, Taiwan)
Correlation Between Gate Leakage Current and Current Collapse in Oxygen Plasma Treated GaN/AlGaN/GaN-on-Si HEMTs: Young-Ki Kwon, Ji Hyun Hwang, Ha Jin Mun, Sungbae Lee, Sung-Min Hong and Jae-Hyung Jang (Gwangju Institute of Science and Technology, Korea (South))
AlGaN/GaN HEMTs with Reduced Self-Heating: Maira Elksne, Abdullah Al-Khalidi and Edward Wasige (University of Glasgow, United Kingdom (Great Britain))
High-Voltage Properties of Strained GaN Quantum Well HEMTs on AlN: Austin Hickman, Samuel Bader, Reet Chaudhuri, Kazuki Nomoto, SM Islam, Huili Xing and Debdeep Jena (Cornell University, USA)
3D Simulation of Gallium Nitride FinFETs Optimized for High Linearity Applications: Qingyun Xie (Massachusetts Institute of Technology, USA); Garrett Schlenvogt and Thomas Jokinen (Silvaco, Inc., USA); Tomas Palacios (Massachusetts Institute of Technology, USA)
Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism: Marie-Clara Pépin and Hassan Maher (Université de Sherbrooke, Canada); Christophe Rodriguez (University of Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France)
Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance: Bilal Hassan (UniversitÌé de Sherbrooke & University of Management & Technology Lahore Pakistan, Canada); Adrien Cutivet (UniversitÌé de Sherbrooke, Canada); Ali Soltani (IEMN - Université de Lille, France); Christophe Rodriguez (University of Sherbrooke, Canada); François Boone and Hassan Maher (Université de Sherbrooke, Canada); Meriem Bouchilaoun (University of Sherbrooke, Canada)
Thermal Performance of Silicon Dioxide Conduction Blocking Layers in GaN VHEMT Devices: Izak Baranowski and Hong Chen (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Jossue Montes, Kai Fu, Tsung-Han Yang and Xuanqi Huang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)

We5PP-RF: Poster Session - RF Devices

Room: Morss Hall(50-140)

On the Large Signal Modeling of MM-wave GaAs PIN Diodes: Iltcho Angelov (Chalmers University of Technology & GOTMIC AB, Sweden); Marcus Gavell (Chalmers, Sweden); Goran Granstrom (GOTMIC, Sweden); Mattias Ferndahl (Gotmic AB, Sweden)
Ratchet Effect in AlGaAs/ InGaAs Multi-Finger High Electron Mobility Transistors: Sergey Rudin and Greg Rupper (United States Army Research Laboratory, USA); Michael Shur (Rensselaer Polytechnic Institute, USA)
Development of 25 GHz InGaAs/InP P-I-N Photodetectors for High Speed Optical Communications: Debdas Pal (MACOM, USA)
High Power mmW Switch Technologies: Timothy Boles (MACOM Technology Solutions, USA)
High Fmax AlGaN/GaN-on-Si HEMT with Thick Rectangular Gate: Kai-Chieh Hsu, Li-Cheng Chang, Yung-Ting Ho and Chao-Hsin Wu (National Taiwan University, Taiwan)
High Speed GaN-based micro-LED Arrays for Visible Light Communication: I-Chen Tseng (Graduate Institute of Photonics and Optoelectronics National Taiwan University, Taiwan); Chao-Hsin Wu (National Taiwan University, Taiwan)
E-Mode InGaAs Quantum Well Fin-structured MOSHEMTs with (NH4)2S Passivation: Shun-Cheng Yang and Chao-Hsin Wu (National Taiwan University, Taiwan)
Al Composition Dependence of Etching Selectivity of GaN/AlGaN for Threshold Voltage Control of AlGaN/GaN HEMTs: Jumpei Sumino (Nagoya Institute of Technology, Japan); Yamato Osada and Ryuuichirou Kamimura (ULVAC Inc., Japan); Yuya Ikedo, Naoki Kato, Kazuyuki Fukumura and Akio Wakejima (Nagoya Institute of Technology, Japan)
Current Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub: Gregory Aizin (Kingsborough Community College, USA); John Mikalopas (Kingsborough College, USA); Michael Shur (Rensselaer Polytechnic Institute, USA)
X-band GaN HEMT Power Amplifier on 6H-SiC with 110 W Output Power: Quan Wang (Shandong University & Institute of Semiconductors, Chinese Academy of Sciences, China); Xiaoliang Wang, Hongling Xiao, Lijuan Jiang, Chun Feng, Wei Li and Fengqi Liu (Chinese Academy of Sciences, China); Xiangang Xu (Shandong University, P.R. China); Zhanguo Wang (Chinese Academy of Sciences, China)
Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region: Safumi Suzuki and Masahiro Asada (Tokyo Institute of Technology, Japan)
Improved DC and RF Performance of AlInN/AlN/GaN HEMTs with a Triethylgallium-Grown GaN Channel: En-Shuo Lin, Indraneel Sanyal, Yen-Chang Lee, Yu-Chuan Lin, Jen-Inn Chyi and Wei Jen Hsueh (National Central University, Taiwan)
An RTD-based Frequency Tunable Oscillator Monolithically Integrated with an InP Schottky-Barrier Diode for Sub-THz Applications: Jaejin Lim and D. Ha (KAIST, Korea (South)); Maengkyu Kim (Korea Advanced Institute of Science and Technology, Korea (South)); Kyounghoon Yang (KAIST, Korea (South))
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer: Koki Osawa, Mizuho Hiraoka, Tomoya Kishi and Yuki Endoh (Tokyo University of Science, Japan); Jun Takeuchi (Tokyo University of Sciense, Japan); Ryuto Machida and Hiroki Fujishiro (Tokyo University of Science, Japan)
DC and RF Performances of InAs FinFET and GAA MOSFET on Silicon: Qi Cheng (University of Delaware, USA); Sourabh Khandelwal (Macquarie University, Australia); Yuping Zeng (University of Delaware, USA)
Modeling the Parasitic Bipolar Effect in InGaAs FinFETs: Xin Zhao, Alon Vardi and Jesus del Alamo (MIT, USA)
Characterization and Modeling of GaAsSb/InAs Nanowire Backward Diodes on the Basis of Quantum Transport Theory and S-parameter Measurement Up to 110 GHz: Shinpei Yamashita and Michihiko Suhara (Tokyo Metropolitan University, Japan); Kiyoto Asakawa (Tokyo Metropolitan College of Industrial Technology, Japan); Kenichi Kawaguchi (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Tsuyoshi Takahashi and Masaru Sato (Fujitsu Laboratories Ltd., Japan); Naoya Okamoto (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan)
Analysis of Terahertz Radiation Characteristics in a Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Modulated by Photocurrent Toward RoF Technology: Masataka Nakanishi, Michihiko Suhara and Naoto Okumura (Tokyo Metropolitan University, Japan); Kiyoto Asakawa (Tokyo Metropolitan College of Industrial Technology, Japan)
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering: Takahiro Suzuki, Yui Fujisawa, Shougo Kawamura, Konosuke Kumasaka, Ryuto Machida and Hiroki Fujishiro (Tokyo University of Science, Japan)

We5PP-WBG: Poster Session - Wide Band Gap

Room: Morss Hall(50-140)

Influence of the AlN/GaN-based Superlattice Buffer on the Breakdown Voltage of the GaN HEMTs Grown on Si: Christian Manz (Fraunhofer IAF, Germany); Fouad Benkhelifa (IAF Fraunhofer, Germany); Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics, Germany); Oliver Ambacher (Fraunhofer IAF & IMTEK, University Freiburg, Germany)
Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams: Akira Uedono (University of Tsukuba, Japan); Shinya Takashima, Masaharu Edo and Katsunori Ueno (Fuji Electric Co., Japan); Hideaki Matsuyama (Euji Electric Co., Japan); Werner Egger and Toenjes Koschine (UniBwM, Germany); Christoph Hugenschmidt and Marcel Dickmann (TUM, Germany); Kazunobu Kojima and Shigefusa Chichibu (Tohoku University, Japan); Shoji Ishibashi (AIST, Japan)
Thermal Behavior of Defects Generated in GaN by Low-Dose Mg-ion Implantation: Masamichi Akazawa, Naoshige Yokota and Kei Uetake (Hokkaido University, Japan)
Correlation of Photo-Response with Bulk Defect States in DIBS Grown ZnO Based Thin Films: Md Arif Khan (Indian Institute of Technology Indore, India); Rohit Singh (Shiv Nadar University, India); Ritesh Bhardwaj (Indian Institute of Technology Indore, India); Amitesh Kumar (National Institute of Technology Patna, India); Mangal Das (Manipal University Jaipur, India); Abhinav Kranti and Shaibal Mukherjee (Indian Institute of Technology Indore, India)
Nitrogen-face AlN-based Field-Effect Transistors: Hironori Okumura (University of Tsukuba & MIT, Japan); Jori Lemettinen and Sami Suihkonen (Aalto University, Finland); Tomas Palacios (Massachusetts Institute of Technology, USA)
Growth of Gallium Nitride Thin Film on Amorphous Glass Substrate Through Pulsed Direct Current Sputtering Deposition: Wei-Sheng Liu (Yuan Ze University, Taiwan); Yu-Lin Chang and Hui-Yu Chen (University of Yuan Ze, Taiwan)
Low-temperature Electrical Transport Properties of MgZnO/ZnO Heterostructures: Rohit Singh (Shiv Nadar University, India); Md Arif Khan (Indian Institute of Technology Indore, India); Amitesh Kumar (National Institute of Technology Patna, India); Abhinav Kranti and Shaibal Mukherjee (Indian Institute of Technology Indore, India)
The Growth of a Discrete GaN Array with Micro Size on Thin Al2O3 Membrane: Seungmin Lee, Daeyoung Moon, Daehan Choi and Hyejin Lim (Seoul National University, Korea (South)); Yongjo Park (Advanced Institutes of Convergence Technology, Korea (South)); Euijoon Yoon (Seoun National University, Korea (South))
Electronic Structure of (ZnO)1-x(InN)x Alloys Calculated Using IQB Theory: Ryota Furuki, Masato Oda and Yuzo Shinozuka (Wakayama University, Japan)
Repeatability of InAlN HEMT Growth by High-Speed-Rotation Single- Wafer MOCVD Tool: Yasushi Iyechika, Hajime Nago, Masayuki Tsukui and Hideshi Takahashi (NuFlare Technology, Inc., Japan)
In-situ Surface Treatment of GaN Substrates for Homoepitaxial Growth by MOCVD: Fen Guo and Yanbin Qin (Chinese Academy of Sciences, China); Quan Wang (Shandong University & Institute of Semiconductors, Chinese Academy of Sciences, China); Lijuan Jiang, Wei Li, Chun Feng, Xiaoliang Wang and Fengqi Liu (Chinese Academy of Sciences, China); Xiangang Xu (Shandong University, China); Zhanguo Wang (Chinese Academy of Sciences, China)
MOCVD-grown BAlN-contained Heterojunctions: Haiding Sun and Kuang-Hui Li (KAUST, Saudi Arabia); Young Jea Park, Theeradetch Detchprohm and Russell Dupuis (School of Electrical and Computer Engineering, Georgia Institute of Technology, USA); Xiaohang Li (King Abdullah University of Science and Technology, Saudi Arabia)
Mg Recoil Implantation into GaN with Incident Nitrogen Ion: Toshikazu Yamada (National Institute of Advanced Industrial Science and Technology, Japan)
Time-resolved Optical Studies of the Annealing-Induced Conductivity Increase in P-Type GaNSb: Antonio Llopis (Army Research Laboratory, USA); Wendy Sarney and Stefan Svensson (US Army Research Laboratory, USA); Natalie Segercrantz (Aalto University, Finland); Yannick Baumgartner (Lawrence Berkeley National Laboratory, USA); Min Ting (University of California, Berkeley & Lawrence Berkeley National Laboratory, USA); Kin Man Yu (Lawrence Berkeley National Lab, USA); Samuel Mao (University of California, Berkeley, USA); Wladek Walukiewicz (Lawrence Berkeley National Lab, USA); Michael Wraback (US Army Research Lab, USA)
Growth of High Quality AlInN/GaN HEMTs on 150 mm Si Substrates Using an Step-graded AlGaN and AlN/GaN Superlattice Composite Buffer: Chuan-Yue Yu, Shiou-Ming Wu, Indraneel Sanyal and Jen-Inn Chyi (National Central University, Taiwan)
Mapping Nanoscale Optical Properties of V-pit Defects in GaN-on-Si LEDs via Cathodoluminescence in Scanning Transmission Electron Microscopy: Zhibo Zhao (Massachusetts Institute of Technology`, USA); Silvija Gradecak and Akshay Singh (Massachusetts Institute of Technology, USA); Sarah Goodman (MIT, USA); Govindo Syaranamual and Saurabh Srivastava (Singapore-MIT Alliance in Research and Technology, Singapore); Jing Yang Chung and Abdul Kadir (National University of Singapore, Singapore); Li Zhang (Singapore-MIT Alliance in Research and Technology, Singapore); Soo-Jin Chua (National University of Singapore, Singapore); Eugene A. Fitzgerald (Massachusetts Institute of Technology, USA); Stephen Pennycook (National University of Singapore, Singapore)
Gamma-ray and Proton Radiation Effects in AlN Schottky Barrier Diodes: Jossue Montes (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Tsung-Han Yang, Xuanqi Huang, Hong Chen, Izak Baranowski and Kai Fu (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
MOCVD Growth of AlGaN on SiC Substrates for High Efficiency Deep UV LED: Abdullah Almogbel, Burhan Saifaddin, Christian J Zollner and Michael Iza (University of California, Santa Barbara, USA); Hamad Albraithen, Ahmed Y. Alyamani and Abdulrahman M. Albadri (King Abdulaziz City for Science and Technology, Saudi Arabia); Steven DenBaars (University of California, Santa Barbara, USA); Shuji Nakamura (University of California Santa Barbara, USA); James Speck (University of California, Santa Barbara, USA)
Optical Characterization of Undoped and Si Doped GaN Grown on C-Plane GaN Free Standing Substrate by Spectroscopic Ellipsometry Above the Fundamental Gap: Naoto Kumagai, Hisashi Yamada, Toshikazu Yamada and Xue-Lun Wang (National Institute of Advanced Industrial Science and Technology, Japan); Mitsuaki Shimizu (National Institute of Advanced Industrial Science and Technology (AIST), Japan)
Defect Control in GaN-on-Si Wafers for Power Electronics Applications: Hongjing Huo, Peng Xiang, Liyang Zhang, Ni Yin and Kai Cheng (Enkris Semiconductor, China)

Wednesday, May 30 7:00 - 8:30

We6RS: Rump Session: Industrial III-V's: continuing the single life or more fulfillment through marriage with silicon?

Panel : Tim Boles(MACOM),Michael Heuken (Aixtron),John Cowles (Analog Devices), Jose Jimenez(Qorvo),Wayne Johnson (IQE), Tom Kazior (Raytheon),Matsumoto Koh (Taiyo Nipon Sanso),Steve Ringel (4Power LLC)

Room: Wong(E-51)

Chair: Eugene A. Fitzgerald (Massachusetts Institute of Technology, USA)

Thursday, May 31

Thursday, May 31 8:30 - 10:00

Th1A5: Lasers

Room: Salon M

Chair: Nelson Tansu (Lehigh University, USA)

8:30 [Invited] Mid-Infrared Quantum Cascade Lasers and Applications: Claire Gmachl (Princeton University, USA)
9:00 Evolution of Material Systems for THz Quantum Cascade Lasers: Hermann Detz (TU Wien & Austrian Academy of Sciences, Austria); Martin Kainz, Sebastian Schönhuber, Tobias Zederbauer, Donald MacFarland, Michael Krall, Christoph Deutsch, Martin Brandstetter, Aaron M Andrews, Werner Schrenk, Karl Unterrainer and Gottfried Strasser (TU Wien, Austria)
9:15 III-V Superlattices on InP/Si Metamorphic Buffer Layers for Λ~4.8Μm Quantum Cascade Lasers: Ayushi Rajeev (University of Wisconsin-Madison, USA); Bei Shi (The Hong Kong University of Science and Technology, Hong Kong); Qiang Li (Hong Kong University of Science and Technology, Hong Kong); Jeremy Kirch, Micah Cheng and Aaron Tze Rue Tan (University of Wisconsin-Madison, USA); Kei May Lau (Hong Kong University of Science and Technology, Hong Kong); Luke Mawst and Thomas Kuech (University of Wisconsin-Madison, USA)
9:30 Interband Cascade Light Emitting Devices for the Mid-IR Spectral Region: Chadwick Canedy and Chul-Soo Kim (Naval Research Laboratory, USA); Mijin Kim (KeyW Corporation, USA); William Bewley and Charles Merritt (Naval Research Laboratory, USA); Michael V Warren (ASEE Fellow at Naval Research Laboratory, USA); Stephanie Tomasulo, Igor Vurgaftman and Jerry Meyer (Naval Research Laboratory, USA)
9:45 High-index-contrast 1.55 Um AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation: Yuan Tian and Douglas Hall (University of Notre Dame, USA)

Th1B5: Wide Band Gap

Room: Wong(E-51)

Chair: Zetian Mi (University of Michigan, USA)

8:30 Phase-transition Cubic GaN with ~29 % Internal Quantum Efficiency: Richard Liu (University of Illinois at Urbana Champaign, Micro and Nanotechnology Laboratory); Richard Schaller (Argonne National Laboratory, USA); Chang Qiang Chen (University of Illinois at Urbana Champaign, Material Research Laboratory); Can Bayram (University of Illinois at Urbana Champaign, Micro and Nanotechnology Laboratory)
8:45 Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes: Sarah Goodman (MIT, USA); Akshay Singh (Massachusetts Institute of Technology, USA); Zhibo Zhao (Massachusetts Institute of Technology`, USA); Dong Su and Kim Kisslinger (Brookhaven National Laboratory, USA); Rob Armitage, Isaac Wildeson and Parijat Deb (Lumileds LLC, USA); Silvija Gradecak (Massachusetts Institute of Technology, USA)
9:00 [Invited] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges: Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
9:30 Investigation of Mg δ-Doping for Low Resistance N-polar p-GaN Films Grown at Reduced Temperatures by MOCVD: Cory C Lund (UCSB, USA); Anchal Agarwal and Brian Romanczyk (University of California Santa Barbara, USA); Thomas Mates (University of California, USA); Shuji Nakamura (University of California Santa Barbara, USA); Steven DenBaars (Advisor, USA); Umesh Mishra and Stacia Keller (UCSB, USA)
9:45 Demonstration of the Highly Radiative Nature of Semi-Polar (20-21) High Al-content AlGaN Quantum Wells by Time-Resolved Photoluminescence: Chelsea Haughn and Greg Rupper (United States Army Research Laboratory, USA); Thomas Wunderer, Zhihong Yang and Noble Johnson (Palo Alto Research Center, USA); Michael Wraback and Gregory Garrett (US Army Research Lab, USA)

Th1C5: Novel Materials & Devices

Room: Salon T

Chair: Susan Fullerton (University of Pittsburgh, USA)

8:30 [Invited] Transition Metal Dichalcogenide Memristors and Memtransistors: Mark Hersam (Northwestern University, USA)
9:00 Efficient Learning with Ultra-low Power Compound Synaptic Devices: Huan Zhao (University of Southern California, USA); Ivan Sanchez Esqueda (University of Southern California & Information Sciences Institute, USA); Jing Guo and Zhipeng Dong (University of Florida, USA); Han Wang (University of Southern California, USA)
9:15 A Gate Tunable Memristive Device Based on 2D Materials for Emulating Hetero-Synaptic Plasticity: Xiaodong Yan (University of Southern California, USA); Matthew Chin and Madan Dubey (Army Research Laboratory, USA); Han Wang (USC, USA)
9:30 [Invited] Placeholder Title: Andrea Ferrari (University of Cambridge, United Kingdom (Great Britain))

Th1D5: RF (Power)

Room: DR 5&6

Chair: Miguel Urteaga (Teledyne Scientific & Imaging LLC, USA)

8:30 Impact of Traps on RF HEMT Linearity: Wenyuan Sun (the Ohio State University, USA); Jose Jimenez (Qorvo, USA); Aaron Arehart (The Ohio State University, USA)
8:45 Influence of Fe- And C-doped Buffers on Microwave Output Power and Dynamic Effects in AlGaN/GaN HEMTs: Johan Bergsten, Sebastian Gustafsson, Mattias Thorsell and Niklas Rorsman (Chalmers University of Technology, Sweden)
9:00 AlxGa1-xN/AlN/GaN and DH- AlxGa1-xN/GaN HEMTs Threshold Voltage Model: Wondwosen Muhea (Universitat Rovira i Virgili, Spain); Nawel Kermas (Universitat Rovira i Virgili, Algeria); Fetene Yigletu (Addis Ababa Institute of Technology, Ethiopia); Roger Cabré and Benjamín Iñiguez (Universitat Rovira i Virgili, Spain)
9:15 N-polar GaN HEMTs Grown on Bulk GaN Using PAMBE for Highly Efficient Mm-Wave Power Amplifiers: Shubhra S Pasayat (University of California Santa Barbara, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); Brian Romanczyk, Onur Koksaldi and Anchal Agarwal (University of California Santa Barbara, USA); Matthew Guidry (University of California, Santa Barbara, USA); Chirag Gupta (University of California Santa Barbara, USA); Christian Wurm (University of California, Santa Barbara, USA); Stacia Keller and Umesh Mishra (UCSB, USA)
9:30 [Invited] the Superlattice Castellated Field Effect Transistor (SLCFET): A Novel Low Loss, Broadband RF Switch Technology with an Fco Figure of Merit > 2THz: Robert Howell, Justin Parke, Ron Freitag, Ishan Wathuthanthri, Ken Nagamatsu, Josephine Chang, Eric Stewart and Shalini Gupta (Northrop Grumman, USA)

Thursday, May 31 10:00 - 10:30

ThCB1: Coffee Break

Thursday, May 31 10:30 - 12:30

Th2A6: Lasers

Room: Salon M

Chairs: Claire Gmachl (Princeton University, USA), Javad Shabani (NYU, USA)

10:30 [Invited] Quantum Cascade Lasers on Metamorphic Buffer Layer: Arkadiy Lyakh (University of Central Florida, USA)
11:00 Ultra-broadband Tunable InAs/InP Quantum Dot External Cavity Laser: Hui-Hong Yuan and Feng Gao (Institute of Semiconductors, Chinese Academy of Sciences, China); Tao Yang (Chinese Academy of Sciences, China)
11:15 Modal Shaping of Photonic Band-Tail States in Photonic Crystal Alloys: Myungjae Lee (Seoul National University, Korea (South)); Ségolène Callard and Christian Seassal (Institut des Nanotechnologies de Lyon, France); Heonsu Jeon (Seoul National University, Korea (South))
11:30 High Temperature Continuous-Wave Operation of Quantum-Dot Lasers on On-Axis Si (001) Substrate: Jinkwan Kwoen (The University of Tokyo, Japan); Bongyong Jang (University of Tokyo, Japan); Takeo Kageyama and Katsuyuki Watanabe (The University of Tokyo, Japan); Yasuhiko Arakawa (University of Tokyo, Japan)
11:45 [Invited] Development of Si-based GeSn Laser: Shui-Qing Yu (University of Arkansas, USA)
12:15 Ultrawide Strain-Tunable Light Emission from InGaAs Nanomembranes: Xiaowei Wang (Boston University, USA); Xiaorui Cui (University of Wisconsin - Madison, USA); John Reno (Sandia National Laboratories, USA); Max Lagally (University of Wisconsin - Madison, USA); Roberto Paiella (Boston University, USA)

Th2B6: Wide Band Gap (Nanostructures)

Room: Wong(E-51)

Chair: Jean-Christophe Harmand (Centre de Nanosciences et de Nanotechnologies, CNRS & Université Paris-Saclay, France)

10:30 High Quality Single-Mode GaN Nanowire Laser Arrays for Nanophotonics and Nanometrology: Mahmoud Behzadirad (Center for High Technology Materials (CHTM), University of New Mexico (UNM), Albuquerque, NM, USA); Neal Wostbrock and Mohsen Nami (Center for High Technology Materials (CHTM), University of New Mexico (UNM), USA); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA); Steven Brueck (University of New Mexico, USA); Tito Busani (Center for High Technology Materials (CHTM), University of New Mexico (UNM), USA)
10:45 Europium Doped GaN Nanocolumn Light-Emitting Diodes Exhibiting High Emission-Wavelength Stability: Hiroto Sekiguchi (Toyohashi University of Technology, Japan)
11:00 [Invited] III-Nitride Nanostructures Grown by MBE: Basics and Applications: Enrique Calleja Pardo (Polytechnical University of Madrid, Spain)
11:30 STEM Study of Polarity and Inversion Domains in GaN Nanowires and AlN Buffer Layers: Alexana Roshko, Matthew Brubaker, Paul Blanchard, Todd Harvey and Kris Bertness (National Institute of Standards and Technology, USA)
11:45 GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication: Mohsen Nami (Yale University, USA); Arman Rashidi (Center for High Technology Materials, University of New Mexico, USA); Morteza Monavarian (Center for High Technology Materials, The University of New Mexico, USA); Mostafa Peysokhan (University of New Mexico, USA); Ashwin Rishinaramangalam (Center for High Technology Materials, University of New Mexico, USA); Isaac Stricklin (University of New Mexico, USA); Igal Brener (Sandia National Laboratories, USA); Steven Brueck (University of New Mexico, USA); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
12:00 Optical Absorption and Passivation of Surface States in III-nitride Photonics: Ian Rousseau and Gordon Callsen (Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland); Jean-François Carlin (EPFL-LASPE, Switzerland); Raphaël Butté (Ecole Polytechnique Fédérale de Lausanne, Switzerland); Nicolas Grandjean (EPFL, Switzerland)
12:15 Band Engineering of InGaN/GaN Multiple-Quantum-Well (MQW) Solar Cells: Xuanqi Huang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Hong Chen, Izak Baranowski and Jossue Montes (Arizona State University, USA); Brendan Gunning and Dan Koleske (Sandia National Laboratories, USA); Yuji Zhao (Arizona state University, USA)

Th2C6: Novel Materials & Devices

Room: Salon T

Chair: Christopher Hinkle (University of Texas at Dallas, USA)

10:30 [Invited] Growth and Electronic Properties of Heusler Epitaxial Thin Films: Chris Palmstrom (University of California Santa Barbara, USA)
11:00 Optical Tuning of the Charge Carrier Type in InAs/GaSb Quantum Wells: Fabian Hartmann (University of Wuerzburg, Germany); Lukas Worschech (Universität Würzburg, Germany); Martin Kamp (Universität Wurzburg, Germany); Pierre Pfeffer (University of Wuerzburg, Germany); Sven Höfling (Universität Würzburg, Germany); Georg Knebl (University of Würzburg, Germany)
11:15 Giant Enhancement in Sensitivity of GaAs MEMS Terahertz Bolometers by Coherent Internal Mode Coupling: Ya Zhang, Boqi Qiu, Naomi Nagai and Kazuhiko Hirakawa (University of Tokyo, Japan)
11:30 [Invited] Pathways to Low Energy Control of Magnetism Using Multiferroics: John Heron (University of Michigan - Ann Arbor, USA)
12:00 Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator: Jiahao Han (Massachusetts Institute of Technology, USA); Anthony Richardella (The Pennsylvania State University, USA); Saima Siddiqui and Joseph Finley (Massachusetts Institute of Technology, USA); Nitin Samarth (The Pennsylvania State University, USA); Luqiao Liu (Massachusetts Institute of Technology, USA)
12:15 Electronic Structure of Two-Dimensional Group-IV Chalcogenides Vertical Heterostructures: Hussain Alsalman (KACST & University of Minnesota Twin Cities, USA); Javad Azadani and Roberto Grassi (University of Minnesota Twin Cities, USA); Steven Koester and Tony Low (University of Minnesota, USA)

Th2D6: Wide Band Gap (Ga2O3)

Room: DR 5&6

Chair: Marko J Tadjer (US Naval Research Laboratory, USA)

10:30 A First Principles Approach on the Possibility of P-Type Ga2O3: Alexandros Kyrtsos, Masahiko Matsubara and Enrico Bellotti (Boston University, USA)
10:45 Analysis of Thermal Conductivity in Bulk and Thin-Film β-Ga2O3 Using Time-Domain Thermoreflectance (TDTR): Jie Zhu, Sandhaya Koirala, Xuewang Wu and Yingying Zhang (University of Minnesota, Twin Cities, USA); Steven Koester (University of Minnesota, USA); Xiaojia Wang (University of Minnesota, Twin Cities, USA)
11:00 Novel p-Type Oxides of Corundum-Structured α-(Rh,Ga)2O3 and α-Ir2O3: Kentaro Kaneko, Shu Takemoto and Shin-ichi Kan (Kyoto University, Japan); Takashi Shinohe (FLOSFIA INC., Japan); Shizuo Fujita (Kyoto University, Japan)
11:15 Anisotropic Electrical Properties of Vertical β-Ga2O3 Schottky Barrier Diodes on Single-Crystal Substrates: Houqiang Fu (Arizona state University, USA); Hong Chen, Xuanqi Huang, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
11:30 β-Ga2O3 Nano-Membrane FETs on a Diamond Substrate: Jinhyun Noh, Sami Alajlouni, Mengwei Si and Hong Zhou (Purdue University, USA); Marko J Tadjer (US Naval Research Laboratory, USA); Ali Shakouri and Peide Ye (Purdue University, USA)
11:45 Enhancement-mode β-Ga2O3 Vertical Power Transistors with an Output Current of 750 a/cm2 and Breakdown Voltage of 560 V: Zongyang Hu, Kazuki Nomoto, Wenshen Li and Nicholas Tanen (Cornell University, USA); Kohei Sasaki and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Tohru Nakamura (Hosei University, Japan); Debdeep Jena and Huili Xing (Cornell University, USA)
12:00 [Invited] 'Electronics on Anything' Using Wide Bandgap Amorphous Oxide Semiconductors: Rebecca L Peterson, Christopher Allemang and Youngbae Son (University of Michigan, USA)

Thursday, May 31 12:30 - 1:30

ThLB: Lunch Break

Thursday, May 31 1:00 - 7:00

Th3: Excursion to Downtown Boston

Thursday, May 31 7:00 - 8:30

Th4: Conference Banquet

For banquet ticket holders only

Room: OFFSITE : FENWAY PARK

Friday, June 1

Friday, June 1 8:30 - 10:00

Fr15PP-No: Poster Session - Novel metarials and device physics

Room: Morss Hall(50-140)

Development and Characterization of a MOVPE Technology for 2D Transition Metal Dichalcogenides: Annika Grundmann (RWTH Aachen, Germany); Matthias Marx (AIXTRON SE, Germany); Holger Kalisch and Andrei Vescan (RWTH Aachen, Germany); Dominik Andrzejewski (University Duisburg Essen, Germany); Tilmar Kümmell (University Duisburg-Essen, Germany); Gerd Bacher (Univerität Duisburg Essen, Germany); Michael Heuken (AIXTRON SE, Germany)
Properties of InP on Si Grown by Corrugated Epitaxial Lateral Overgrowth: Giriprasanth Omanakuttan (Royal Institute of Technology-KTH, Sweden); Oscar Martínez (University of Valladolid, Spain); Saulius Marcinkevicius and Tomas Uzdavinys (KTH Royal Institute of Technology, Sweden); Juan Jiménez (Unversity Valladolid, Spain); Sebastian Lourdudoss (Royal Institute of Technology, Sweden); Yan-Ting Sun (Royal Institute of Technology-KTH, Sweden)
FastHall™: A Method to Measure Low Mobility Materials for Multi-Carrier Analysis: Jeffrey Lindemuth (Lake Shore Cryotronics, USA)
Significant Conductivity Enhancement of Conductive PEDOT:PSS Films Through a Treatment with Formic Acid Method: Wen-Ray Chen (National Formosa University, Taiwan); Po-Hsun Hsu (National University of Kaohsiung, Taiwan); Pao-Hsun Huang (National Cheng-Kung University, Taiwan); Chien-Jung Huang (National University of Kaohsiung, Taiwan)
In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors: Kai-Lin Fan (National Taiwan University & Integrated Optical Electronic Device, Taiwan)
InSe Metal Contact Optimization for Enhanced InSe FET Performance: Badreyya AlShehhi (Khalifa University & Masdar Campuse, United Arab Emirates); Srinivasa Tamalampudi (Masdar Institute, USA); Irfan Saadat (Faculty - Khalifa University & Masdar Institute, United Arab Emirates); Ibraheem Almansouri (Masdar Institute of Science and Technology, United Arab Emirates)
3D Self-Consistent Quantum Transport Modeling for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Scattering Effects: Han-Wei Hsiao and Yuh-Renn Wu (National Taiwan University, Taiwan)
Ultrasonic Vibration Processing as Promising Methodology for Compound Semiconductor Defect Engineering: ZnCdTe Application: Valentina Korchnoy (Technion - Israel Institute of Technology, Israel); Michael Lisiansky (Tower Semiconductor Ltd, Israel); Alex Berner (Technion-Israel Institute of Technology, Israel)
Reduction of Bismuth Segregation in GaAsBi/GaAs QWs Grown by MBE Using a Two-Substrate-Temperature Technique: Pallavi Patil, Fumitaro Ishikawa and Satoshi Shimomura (Ehime University, Japan); Esperanza Luna (Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin, Germany)
Optical Polarization Switching in (20-21) InGaN Quantum Wells and Estimation of Deformation Potentials D5 and D6: Roy Chung and Gregory Garrett (US Army Research Lab, USA); Ryan Enck (US Army Research Laboratory, USA); Michael Wraback and Anand Sampath (US Army Research Lab, USA)
Investigation of the Dynamic Characteristics of High Power p-GaN Gate AlGaN/GaN HEMTs: Shiou-Ming Wu, Indraneel Sanyal, Geng-Yen Lee and Jen-Inn Chyi (National Central University, Taiwan)
Interplay Between Fabry-Pérot Resonance and Disorder Effect in Middle Mobility Quantum Point Contacts: Motoi Takahashi (Tohoku University, Japan)
Hall Effect and Magnetization Measurements of Cobalt (Co) Doped Zinc Oxide (ZnO) Polycrystalline Samples: Nelly Bautista (Universidad Nacional de Colombia & Fundación Universitaria Unipanamericana, Colombia); Elkin Giovanni Pineda Rojas and Álvaro Mariño Camargo (Universidad Nacional de Colombia, Colombia)
Graphene-Metal Contact Optimization for Ballistic RF Transistor Application: Nazir Hossain, Poorna Marthi and Jean Francois Millithaler (University of Massachusetts Lowell, USA); Martin Margala (University of Louisiana at Lafayette, USA)

Fr15PP-NS: Poster Session - Nanostructures

Room: Morss Hall(50-140)

Low-to-mid Al Content AlInN Layers Deposited on Si(100) and Si(111) by RF Sputtering: Rodrigo Blasco and Arantzazu Nuñez-Cascajero (Univesidad de Alcala, Spain); Akhil Ajay and Eva Monroy (CEA-Grenoble, France); Sirona Valdueza (University of Alcala, Spain); Fernando Naranjo (Univesidad de Alcala, Spain)
Structural Characteristics of GaAs/GaAsBi Nanowires: Kosuke Yano and Kyohei Takada (Graduate Schoolof Science and Engineering, Ehime University, Japan); Pallavi Patil and Satoshi Shimomura (Ehime University, Japan); Yumiko Shimizu (Toray Research Center, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Growth and Photoluminescence Properties of InSb/GaSb Nano-Stripes Grown by Molecular Beam Epitaxy: Supeeranat Posri, Supachok Thainoi and Suwit Kiravittaya (Chulalongkorn University, Thailand); Aniwat Tandaechanurat (International School of Engineering (ISE), Chulalongkorn University, Thailand); Noppadon Nuntawong (NECTEC, Thailand); Suwat Sopitpan (Thai Microelectronics Center (TMEC), Thailand); Visittapong Yordsri (National Metal and Materials Technology Center, Thailand); Chanchana Thanachayanont (National Metal and Material Technology Center, Thailand); Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow (Chulalongkorn University, Thailand)
Grazing Incidence Small Angle X-Ray Scattering on a Laboratory Diffractometer for Measurement of Critical Dimensions in Periodic Nanostructure Arrays: Mike Hawkridge (Malvern Panalytical, USA); Lars Grieger (Malvern Panalytical, The Netherlands)
Native Oxide AlGaOx Outermost Shell for a Passivation Structure of GaAs-related Multi-Layered Nanowires: Naoki Tsuda (Graduate School of Science and Engineering, Ehime University, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Molecular Beam Epitaxial Growth of GaInNAs Nanowires: Mitsuki Yukimune and Hiroya Ikeda (Graduate School of Science and Engineering, Ehime Univercsty, Japan); Ryo Fujiwara (Graduate School of Science and Engineering, Ehime University, Japan); Mattias Jansson, Weimin Chen and Irina Buyanova (Physics, Chemistry and Biology, Linköping University, Sweden); Fumitaro Ishikawa (Ehime University, Japan)
Growth of GaNAs Nanowires with Nitrogen Concentration over 2Percent: Ryo Fujiwara (Graduate School of Science and Engineering, Ehime University, Japan); Hiroya Ikeda and Mitsuki Yukimune (Graduate School of Science and Engineering, Ehime Univercsty, Japan); Mattias Jansson, Weimin Chen and Irina Buyanova (Physics, Chemistry and Biology, Linköping University, Sweden); Fumitaro Ishikawa (Ehime University, Japan)
Morphological Evolution in CdS Thin Films from Flowers to Reef like Structures: Nupur Saxena and Tania Kallsi (Central University of Jammu, India); Pragati Kumar (Central University of Jammu (CUJ), Jammu, India)
Investigations of Light Polarization of GaAs/AlGaOx Nanowire: Jun Natsui (Graduate School of Science and Engineering, Ehime University, Japan); Naoki Yamamoto (Tokyo Institute of Technology, Japan); Fumitaro Ishikawa (Ehime University, Japan)
Theoretical Study of Nucleation and Growth of in Nanostructures During Droplet Epitaxy on Patterned GaAs Substrates: Sergey Balakirev, Maxim Solodovnik, Mikhail Eremenko, Ilya Mikhaylin and Oleg Ageev (Southern Federal University, Russia)
Droplet Epitaxy of in/algaas Nanostructures: Maxim Solodovnik, Sergey Balakirev, Mikhail Eremenko, Ilya Mikhaylin and Oleg Ageev (Southern Federal University, Russia)
Self-Formation of InAs Quantum Dots on Oxide/Semiconductor Substrates by Molecular Beam Deposition: Koichi Yamaguchi, Akinori Makaino, Katsuyoshi Sakamoto and Tomah Sogabe (The University of Electro-Communications, Japan)
Study of Strain and Energy Profile in InAs Quantum Dot-In-A-Well Heterostructure with InGaAs, InAlGaAs and GaAsN Matrix: Jhuma Saha, Debi Panda, Mahitosh Biswas and Debabrata Das (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Impact of Nitrogen Content on Strain and Photoluminescence of GaAs1-xNx Capped InAs Quantum Dots: Debi Panda, Jhuma Saha, Mahitosh Biswas and Debabrata Das (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Hybrid InAs Stranski-Krastanov and Submonolayer Quantum Dot Solar Cell: Towards Enhanced IR Harvesting: Debabrata Das, Debi Panda, Jhuma Saha and Vinayak Chavan (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Vertical Arrangement of InGaAs / GaAs (Sb) Quantum Dots with AlGaAsSb Insertion Layer in Solar Cell Device: Wei-Sheng Liu (Yuan Ze University, Taiwan); Shao-Yang Lin, Ren-Yo Liu and Hsiao-Chien Lin (University of Yuan Ze, Taiwan)
Alternative Approached to Extend the Emission Spectrum in Coupled Multilayer QDs Structure by Using GaAs Capping Layer: Binita Tongbram (Indian Institute of Technology Bombay, India); Subhananda Chakrabarti (Center for Excellence in Nanoelectronics, IIT Bombay, India)
Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission: Toshiyuki Kaizu, Takaaki Koike and Takashi Kita (Kobe University, Japan)
HSQ Etching Resistance Dependence on Substrate: Jie Zhang, Kazy Shariar and Yuping Zeng (University of Delaware, USA)
Effect of Bis(trifluoromethane) Sulfonimide (Super Acid) Treatment on Electrical Properties of InAs Nano Ribbons: Kazy Shariar, Jie Zhang, Zijian Wang, Robert Opila and Yuping Zeng (University of Delaware, USA)
Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001): Tomonori Ito, Toru Akiyama, Kohji Nakamura and Abdul-Muizz Pradipto (Mie University, Japan)
A Hydrogen-free ICP Etch of Indium Phosphide Using Chlorine/Argon Chemistry: Katie Hore and Zhanxiang Zhao (Oxford Instruments Plasma Technology, United Kingdom (Great Britain)); Ligang Deng (Oxford Instruments & Plasma Technology, United Kingdom (Great Britain)); Mark McNie (Oxford Instruments Plasma Technology, United Kingdom (Great Britain))

Fr15PP-Opt: Poster Session - Optoelectronics

Room: Morss Hall(50-140)

Metamorphic InGaAs Avalanche Photodiodes Towards mid-IR on InP: Yingjie Ma (Shanghai Institute of Microsystem and Information Technology, China); Yi Gu (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China); Xingyou Chen (Shanghai Institute of Microsystem and Information Technology, China); Yanhui Shi (Shanghai Institute of Microsystem and Information Technology, USA); Wanyan Ji, Ben Du and Yonggang Zhang (Shanghai Institute of Microsystem and Information Technology, China)
Doping Engineering of Extended Wavelength InGaAs Photodetectors: Xingyou Chen (Shanghai Institute of Microsystem and Information Technology, China); Yi Gu (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, China); Yingjie Ma and Ben Du (Shanghai Institute of Microsystem and Information Technology, China); Yanhui Shi (Shanghai Institute of Microsystem and Information Technology, USA); Yonggang Zhang (Shanghai Institute of Microsystem and Information Technology, China)
Towards the Monolithic Integration of GaSb Solar Cells on Si: Julie Tournet and Yves Rouillard (University of Montpellier, CNRS, France); Eric Tournié (Université de Montpellier, France)
Growth and Material Characterizations of Type-II InAs/GaSb Superlattice: Marie Delmas and Yaksh Rawal (Cardiff University, United Kingdom (Great Britain)); Baolai Liang (University of California, Los Angeles, USA); Diana Huffaker (Cardiff University, United Kingdom (Great Britain))
InP-based Solar Cells Integrated on Si for High Efficiency Low Cost PV: Stefano Soresi, Claire Besançon and Nicolas Vaissiere (III-V Lab, France); Gwénaëlle Hamon (Total S.A. Renewables, France); Alexandre Larrue (III-V Lab, France); José Alvarez (GeePs CentraleSupélec, France); Mickael Martin and Thierry Barron (LTM CNRS, CEA, France); Jean Decobert (Alcatel-Thales III-V Lab, France)
Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors: Ananth Saran Yalamarthy, Ruth Miller, Karen Dowling and Debbie Senesky (Stanford University, USA)
Light Extraction Enhancement of AlGaInP LED by Etching Process: Ray-Hua Horng, You-Cheng Lin and Fu-Gow Tarntair (National Chiao Tung University, Taiwan); Dong Wuu (NCHU, Taiwan)
High-efficiency AlGaN-based Deep Ultraviolet Flip-Chip Light Emitting Diodes: Tae Hoon Park, Tae Ho Lee and Tae Geun Kim (Korea University, Korea (South))
SOA-integrated High Power 128 Gb/s Coherent Optical Modulator Fabricated on Semi-Insulating InP Substrate: Satoshi Nishikawa (Mitsubishi Electric Corporation, Japan); Yuichiro Horiguchi (Mitsubishi Electric Corporartion, Japan); Yohei Hokama, Masakazu Takabayashi, Syusaku Hayashi, Koichi Akiyama, Fukiko Hirose, Hayato Sano, Keita Mochizuki, Keigo Fukunaga and Keisuke Matsumoto (Mitsubishi Electric Corporation, Japan); Eitaro Ishimura (Mitsubishi electric corporation, Japan)
High Efficiency Optical Mode Coupling Between Si Waveguide and III-V/Si Hybrid Sections by Double Taper-Type Coupler Structure: Takehiko Kikuchi (Sumitomo Electric Industries, LTD, Japan); Junichi Suzuki and Fumihito Tachibana (Tokyo Instittue of Technology, Japan); Naoko Inoue and Hideki Yagi (Sumitomo Electric Industries, LTD., Japan); Moataz Eissa and Takuya Mitarai (Tokyo Instittue of Technology, Japan); Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
Device Performance Improvement of Thin Film Transistor with Ti-Doped GaZnO / InGaZnO / Ti-Doped GaZnO Sandwich Composite Channel: Wei-Sheng Liu (Yuan Ze University, Taiwan); Yi-Hung Lin, Chien-Lung Huang, Chih-Wei Wang, Yi-Ming Chu and Chih-Hao Hsu (University of Yuan Ze, Taiwan)
Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC: Yuning Wang and Kumi Nagasaka (Tokyo Institute of Technology, Japan); Junichi Suzuki (Tokyo Instittue of Technology, Japan); Liu Bai (Tokyo Institute of Technology, Japan); Takuya Mitarai (Tokyo Instittue of Technology, Japan); Tomohiro Amemiya, Nobuhiko Nishiyama and Shigehisa Arai (Tokyo Institute of Technology, Japan)
AlInN-on-silicon Solar Cells Deposited by RF Sputtering Thickness Effect: Rodrigo Blasco and Arantzazu Nuñez-Cascajero (Univesidad de Alcala, Spain); Louis Grenet (CEA Grenoble, France); Javier Olea (Universidad Complutense de Madrid, Spain); Fernando Naranjo (Univesidad de Alcala, Spain); Sirona Valdueza (University of Alcala, Spain)
InP-based Electro-Absorption Modulator Operating at 25Gbps from 25 to 65 °C in C Band: Hua Yang (Tyndall National Institute, UCC, Ireland); Niall Kelly and Moises Jezzini (Tyndall National Institute, UCC, Cork, Ireland); Agnieszka Gocalinska (Tyndall National Institute, UCC, Ireland); Kevin Thomas (Tyndall National Institute, Ireland); Emanuele Pelucchi (Tyndall National Institute, UCC, Ireland); Frank H Peters (University College Cork, Ireland)
Sidewall Roughness Atomic Force Microscopy Characterization of Deep Etched InP/〖Al〗_x 〖Ga〗_(1-x) 〖In〗_y 〖As〗_(1-y) Structures: Reasat Fahim (University of Glasgow, United Kingdom (Great Britain))
Characterization of Pseudomorphic AlGaN LEDs on AlN Substrates Emitting Below 240 nm: Leo Schowalter, James Grandusky and Craig Moe (Crystal IS, Inc., USA); Jumpei Kasai, Tomohiro Morishita and Akira Yoshikawa (Asahi Kasei, Japan)

Fr1PP-Ga: Poster Session - Ga2O3

Room: Morss Hall(50-140)

Temperature-dependent Ga2O3 Growth on Sapphire by MOCVD: Kuang-Hui Li, Haiding Sun and Carlos Torres-Castanedo (KAUST, Saudi Arabia); Che-Hao Liao (National Yunlin University of Science and Technology, Taiwan); Hsin-Hung Yao (KAUST, Saudi Arabia); Serdal Okur, Tom Salagaj, Aaron Feldman and Gary Tompa (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
Demonstration of Solar-Blind Avalanche Photodetectors Based on Exfoliated β-Ga2O3: Sooyeoun Oh and Jihyun Kim (Korea University, Korea (South))
X-ray Detection Based on Vertical Ga2O3 Schottky Barrier Diodes: Leidang Zhou (Xi'an Jiaotong University, China); Xing Lu (South China University of Technology, China)
Thicknesses Effects and Defects-related Study on ZnGa2O4 Epilayer with High-Voltage Measurement: Li-Chung Cheng, Chiung-Yi Huang and Ray-Hua Horng (National Chiao Tung University, Taiwan)
Miscibility and Phase Separation in (InxGa1-x)2O3: Charlotte Wouters (Leibniz Institute of Crystal Growth, Germany)
Phase Transition Temperatures of α-Ga2O3 on Sapphire: Riena Jinno, Kentaro Kaneko and Shizuo Fujita (Kyoto University, Japan)
β-Ga2O3 Hollow Nanospheres Based Ultraviolet Photodetector: Prachi Sharma, Stefan Turan, Gabriel Gedler, Chulsung Bae and Shayla Sawyer (Rensselaer Polytechnic Institute, USA)
Characterization of Corundum-structured α-Ga2O3 Layer Grown by Hydride Vapor Phase Epitaxy Methods: Hoki Son (University of Korea, Korea (South)); Daewoo Jeon (Korea Institute of Ceramic Engineer & Technology, Korea (South))
Ga2O3: Transparent Conductive Oxide with Plasma Adjusted Properties: Alban Maertens (CentraleSupelec & LMOPS, France); Samuel Margueron (Université de Lorraine, France); Frédéric Genty (CentraleSupelec, France); Adulfas Abrutis (University of Vilnius, Lithuania); Thierry Belmonte, Pascal Boulet and Jaafar Ghanbaja (Université de Lorraine, France); Abdelkrim Talbi (IEMN, France); Ausrine Bartasyte (FEMTO-ST Institute, France)
Origin of Deep Pits Formed on (001) β-Ga<sub>2</sub>O<sub>3</sub> Homoepitaxial Layers Grown by Halide Vapor Phase Epitaxy: Keita Konishi (Tokyo University of Agriculture and Technology, Japan); Ken Goto (Tamura Corporation, Japan); Hisashi Murakami (Tokyo University of Agriculture and Technology, Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
Ga2O3 Current Aperture Vertical Electron Transistors with N-Ion-Implanted Current Blocking Layer: Man Hoi Wong (National Institute of Information and Communications Technology, Japan); Ken Goto, Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Hisashi Murakami and Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)
Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ε-Ga2O3 Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition: Daisuke Tahara, Hiroyuki Nishinaka and Masahiro Yoshimoto (Kyoto Institute of Technology, Japan)
Characterization of Halide Vapor Phase Homoepitaxial β-Ga2O3 Films Co-doped by Silicon and Nitrogen: Marko J Tadjer (US Naval Research Laboratory, USA); Andrew Koehler and Jaime Freitas Jr (Naval Research Laboratory, USA); Matty Specht (American Society for Engineering Education, USA); Karl Hobart, Evan Glaser, Travis Anderson and Fritz Kub (Naval Research Laboratory, USA); Akito Kuramata (Tamura Corporation, Japan)
Crystallographically-dependent Thermal Boundary Conductance Across metal/Ga2O3 Interfaces: Brian M. Foley, Samuel Kim, Luke Yates and Zhe Cheng (Georgia Institute of Technology, USA); Samuel Graham, Jr (Georgia Institute of Technology & Oak Ridge National Laboratory, USA)
Temperature-dependent Electrical Properties of β-Ga2O3 Schottky Barrier Diodes on Highly Doped Single-Crystal Substrates and Their Reverse Current Leakage Mechanisms: Tsung-Han Yang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Xuanqi Huang, Hong Chen, Jossue Montes, Izak Baranowski and Kai Fu (Arizona State University, USA); Yuji Zhao (Arizona state University, USA)
Growth of Mg Doped (010) β-Ga2O3 by Plasma Assisted Molecular Beam Epitaxy: Akhil Mauze (University of California, Santa Barbara, USA); James Speck (UCSB, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); Thomas Mates (University of California, USA)
Electrical Properties of alpha-Ga2O3 Films on M-Plane Sapphire Substrates: Kazuaki Akaiwa, Katsuya Ohta, Takahito Sekiyama and Tomoki Abe (Tottori University, Japan); Takashi Shinohe (FLOSFIA INC., Japan); Kunio Ichino (Tottori University, Japan)
Metal-Assisted Chemical Etch of β-Ga2O3: Towards the Formation of Smooth Vertical Damage-Free and High Aspect Ratio Fin Array: Munho Kim and Hsien-Chih Huang (University of Illinois, USA); Kelson Chabak (Air Force Research Laboratory, USA); Xiuling Li (University of Texas at Austin, USA)
Optimization of Dynamic Switch Loss Metrics for Lateral β-Ga2O3 Devices: Andrew Green (United States Air Force & KBRwyle, USA); Kelson Chabak and Michael Schuette (Air Force Research Laboratory, USA); Günter Wagner (Leibniz Institute for Crystal Growth - IKZ, Germany); Dennis Walker, Kevin Leedy and Antonio Crespo (Air Force Research Laboratory, USA); Miles Lindquist (Air Force Research Laboratory, KBRwyle, USA); Gregg Jessen (Air Force Research Laboratory, USA)

Friday, June 1 10:00 - 10:30

FrCB1: Coffee Break

Friday, June 1 10:30 - 12:30

Fr2A7: Photonics

Room: Salon M

Chair: Shui-Qing Yu (University of Arkansas, USA)

10:30 [Invited] THz Difference-Frequency Generation in Quantum Cascade Lasers on Silicon: Mikhail Belkin (The University of Texas at Austin, USA)
11:00 Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication: Morteza Monavarian (Center for High Technology Materials, The University of New Mexico, USA); Arman Rashidi, Andrew Aragon and Ashwin Rishinaramangalam (Center for High Technology Materials, University of New Mexico, USA); Sang Ho Oh (University of California, Santa Barbara, USA); Steven DenBaars (University of California, Santa Barbara); Daniel Feezell (Center for High Technology Materials, University of New Mexico, USA)
11:15 Gan/AlGaN Nanowire Heterostructures for Mid-Infrared Intersubband Technology: Akhil Ajay (CEA-Grenoble, France); Rodrigo Blasco (Univesidad de Alcala, Spain); Jakub Polaczynski, Maria Spies and Martien den-Hertog (CNRS-Insititute Neel, France); Eva Monroy (CEA-Grenoble, France)
11:30 Thermal Reliability Analysis of InGaN Solar Cells: Xuanqi Huang (Arizona State University, USA); Houqiang Fu (Arizona state University, USA); Hong Chen, Izak Baranowski, Jossue Montes and Tsung-Han Yang (Arizona State University, USA); Brendan Gunning and Dan Koleske (Sandia National Laboratories, USA); Yuji Zhao (Arizona state University, USA)
11:45 Evidence for Recombination-Induced Degradation Processes in InGaN-based Optoelectronic Devices: Carlo De Santi, Matteo Meneghini, Alessandro Caria and Nicola Renso (University of Padova, Italy); Ezgi Dogmus (IEMN-CNRS Lille, Italy); Malek Zegaoui (IEMN-CNRS, France); Farid Medjdoub (Microelectronics and Nanotechnology, France); Enrico Zanoni (DEI, Italy); Gaudenzio Meneghesso (University of Padova, Italy)
12:00 [Invited] III-nitride Microlasers on Silicon Integrated on a 2D Photonic Platform: Philippe Boucaud (CNRS-CRHEA, France); Farsane Tabataba-Vakili (C2N, France); Laetitia Doyennette (L2C, France); Christelle Brimont and Thierry Guillet (Laboratoire Charles Coulomb (L2C), CNRS-University Montpellier 2, France); Stephanie Rennesson (Université Côte d'Azur, CRHEA-CNRS, France); Eric Frayssinet, Benjamin Damilano, Jean-Yves Duboz and Fabrice Semond (CRHEA-CNRS, France); Moustafa El Kurdi (C2N-Univ Paris Sud, France); Sébastien Sauvage (C2N-CNRS, France); Xavier Checoury (CNRS Univ Paris Sud 11, France); Bruno Gayral (CEA-CNRS, INAC-SP2M, CEA Grenoble, France)

Fr2B7: Nanostructures

Room: DR 3&4

Chair: Cezar Zota (IBM Research Zurich, Switzerland)

10:30 Scaling Effect on Vertical FETs Using III-V Nanowire-Channels: Katsuhiro Tomioka (Hokkaido University & GS-IST and RCIQE, Japan); Hironori Gamou (Hokkaido University, Japan); Akinobu Yoshida (Hokkaido Univerisy, Japan); Junichi Motohisa (Hokkaido University, Japan)
10:45 Multi-nanowire In-Plane-Gate Field Effect Transistors: Giovanni Santoruvo (Ecole Polytechnique Federale de Lausanne, Switzerland); Elison Matioli (EPFL, Switzerland)
11:00 Bandgap Engineering of GaAsSb/InGaAs P-channel Hetero-junction Tunnel Field-Effect Transistors with a GaSb Pocket Layer: Wei Jen Hsueh, Jin-Yang Chen, Cheng Yu Chen, Andrey Katkov and Jen-Inn Chyi (National Central University, Taiwan)
11:15 [Invited] III-V Nanowire MOSFETs: A Path Towards 10 nm High-Performance Transistors: Lars-Erik Wernersson (Lund University, Sweden)
11:45 GaAsSb/InAs Nanowire Backward Diodes for Ambient RF Energy Harvesting: Tsuyoshi Takahashi (Fujitsu Laboratories Ltd., Japan); Kenichi Kawaguchi (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Masaru Sato (Fujitsu Laboratories Ltd., Japan); Naoya Okamoto (Fujitsu Limited & Fujitsu Laboratories Ltd., Japan); Michihiko Suhara (Tokyo Metropolitan University, Japan)
12:00 Magnetic Influence on Cryogenic InP HEMT DC Characteristics: Isabel Harrysson Rodrigues (Chalmers University of Technology, Sweden); Arsalan Pourkabirian, Giuseppe Moschetti and Joel Schleeh (Low Noise Factory AB, Sweden); Per-Åke Nilsson (Chalmers University of Technology, Sweden); Jan Grahn (Chalmers University of Thechnology, Sweden)
12:15 Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD: Simone Tommaso Suran Brunelli (University of California, Santa Barbara, USA); Brian Markman, Jun Wu, Hsing Ying Tseng and Aranya Goswami (UCSB, USA); Chris Palmstrom (University of California Santa Barbara, USA); Mark J W Rodwell (University of California, Santa Barbara, USA); Jonathan Klamkin (University of California Santa Barbara, USA)

Fr2F1: Ga2O3 Keynotes

Room: DR 5&6

Chair: Shizuo Fujita (Kyoto University, Japan)

10:30 Introduction of Gallium Oxide Technologies: Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)
10:45 [Invited] Development of (AlxGa1-x)2O3/Ga2O3 Heterostructures and Devices: James Speck (University of California, Santa Barbara, USA)
11:20 [Invited] Development of Halide Vapor Phase Epitaxy of Ga2O3 for Power Device Applications: Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
11:55 [Invited] Material and Device Engineering for Gallium Oxide Field Effect Transistors: Siddharth Rajan (The Ohio State University, USA)

Friday, June 1 12:30 - 1:30

FrLB: Lunch Break

Friday, June 1 1:30 - 3:00

Fr3A8: Photonics

Room: Salon M

Chair: Mikhail Belkin (The University of Texas at Austin, USA)

1:30 [Invited] Heterointegration of Photonics and IR Materials on Large-mismatched Substrates via Direct MBE Growth: Amy W. K. Liu (IQE Inc., USA); Dmitri Loubychev and Joel Fastenau (IQE Inc, USA); Aled Morgan and Stuart Edwards (IQE Silicon, United Kingdom (Great Britain)); Matthew Fetters, Hubert Krysiak, Joe Zeng, Michael Kattner, Phil Frey and Scott Nelson (IQE Inc., USA); Rowel Go, Pedro Figueiredo, Matthew Suttinger and Arkadiy Lyakh (University of Central Florida, USA)
2:00 High Responsivity InP Nano Photo-Detector Monolithic Integrated on (001) Silicon Substrates by Heteroepitaxy: Zhao Yan (The Hong Kong University of Science and Technology, Hong Kong); Yu Han and Kei May Lau (Hong Kong University of Science and Technology, Hong Kong)
2:15 GaSb Based Materials and Devices Epitaxially Grown onto Silicon: Evangelia Delli, Peter Hodgson, Eva Repiso, Jonathan Hayton and Adam Craig (Lancaster University, United Kingdom (Great Britain)); Richard Beanland (University of Warwick, United Kingdom (Great Britain)); Andrew R J Marshall, Anthony Krier and Peter Carrington (Lancaster University, United Kingdom (Great Britain))
2:30 Defect Filtering in InP-on-Si via Strain-Compensated InGaAsP Superlattices in MOCVD: Ludovico Megalini (UCSB, USA); Simone Tommaso Suran Brunelli (University of California, Santa Barbara, USA); Aidan Taylor (UCSB, USA); William Charles (SUNY Polytechnic Institute, USA); Brandon Isaac (University of California, Santa Barbara, USA); John E Bowers (University of California, USA); Jonathan Klamkin (University of California Santa Barbara, USA)
2:45 High-efficient InP-based Waveguide Photodiodes Monolithically Integrated with 90° Hybrid Towards Next-Generation Coherent Transmission Systems: Takuya Okimoto (Sumitomo Electric Device Innovations, Inc., Japan); Hideki Yagi (Sumitomo Electric Industries, LTD., Japan); Satoru Okamoto, Kenji Sakurai, Koji Ebihara, Kouichiro Yamazaki, Yoshifumi Nishimoto, Kazuhiko Horino, Tatsuya Takeuchi and Yasuo Yamasaki (Sumitomo Electric Device Innovations, Inc., Japan); Mitsuru Ekawa (Sumitomo Electric Industries, Ltd., Japan); Yoshihiro Yoneda (Sumitomo Electric Device Innovations, Inc., Japan)

Fr3B8: Nanostructures

Room: DR 3&4

Chair: Katsuhiro Tomioka (Hokkaido University, Japan)

1:30 Single Nanowire Laser with GaAsSb-based Multiple-Superlatticed Gain Structure: Dingding Ren (Norwegian University of Science and Technology, Norway); Lyubomir Ahtapodov and Julie Nilsen (NTNU, Norway); Jianfeng Yang (University of New South Wales, Australia); Anders Gustafsson (Lund University, Sweden); Junghwan Huh (NTNU, Norway); Gavin Conibeer (UNSW Australia, Australia); Antonius van Helvoort (NTNU, Norway); Bjørn-Ove Fimland and Helge Weman (Norwegian University of Science and Technology, Norway)
1:45 Fully-Strained InGaAs/InP Quantum Well Nanopillar Lasers on Silicon with Dimensions Far Exceeding the Critical Thickness: Kar Wei Ng (University of Macau, Macao); Jonas Kapraun, Fabian Schuster and Connie J. Chang-Hasnain (University of California Berkeley, USA)
2:00 [Invited] Self-assembled InGaAs Quantum Dots for Quantum Nanophotonics: Allan Bracker (Naval Research Lab, USA)
2:30 High-density InAs Quantum Dots for High-Efficiency Photodetection in Telecom and THz Band: Toshimasa Umezawa (NICT, Japan); Kouichi Akahane and Atsushi Matsumoto (National Institute of Information and Communications Technology, Japan); Atsushi Kanno (Nagoya Institute of Technology, Japan); Naokatsu Yamamoto (National Institute of Information and Communications Technology, Japan)
2:45 Unique Polarization-Dependent Photoluminescence Property of GaSb/GaAs Quantum Dots on (001) Ge Substrate Grown by Molecular Beam Epitaxy: Zon Zon, Pakawat Phienlumlert, Supachok Thainoi and Suwit Kiravittaya (Chulalongkorn University, Thailand); Aniwat Tandaechanurat (International School of Engineering (ISE), Chulalongkorn University, Thailand); Noppadon Nuntawong (NECTEC, Thailand); Suwat Sopitpan (Thai Microelectronics Center (TMEC), Thailand); Visittapong Yordsri (National Metal and Materials Technology Center, Thailand); Chanchana Thanachayanont (National Metal and Material Technology Center, Thailand); Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow (Chulalongkorn University, Thailand); Yasutomo Ota (The University of Tokyo, Japan); Satoshi Iwamoto and Yasuhiko Arakawa (University of Tokyo, Japan)

Fr3C7: Novel Materials & Characterization

Room: Salon T

Chair: Asif Khan (Georgia Institute of Technology, USA)

1:30 [Invited] Liquid-Solid Interface as Crystal Growth Front: Masamitu Takahasi (National Institutes for Quantum and Radiological Science and Technology, Japan)
2:00 Atomically-resolved Operando Surface Studies of III-V Nanowire Devices by Scanning Tunneling Microscopy and Spectroscopy: Sarah McKibbin, Johan Knutsson, James Webb, Olof Persson, Martin Hjort, Sebastian Lehmann, Kimberly A. Dick, Anders Mikkelsen and Rainer Timm (Lund University, Sweden)
2:15 Characterization of Epilayer Transfer by Colored Picosecond Acoustics: Arnaud Devos (IEMN CNRS, France); Patrick Emery (MENAPiC, France)
2:30 [Invited] Total Tomography of Nonplanar InGaAs Quantum Wells on GaAs Nanowires: Lincoln Lauhon (Northwestern University, USA)

Fr3F2: Ga2O3 Growth and Characterization

Room: DR 5&6

Chair: Siddharth Rajan (The Ohio State University, USA)

1:30 Faceting and Catalysis During Molecular Beam Epitaxy of Ga2O3 Homoepitaxial Thin Film: Piero Mazzolini, Patrick Vogt, Zongzhe Cheng and Michael Hanke (Paul-Drude-Institut für Festkörperelektronik, Germany); Robert Schewski (Leibniz Institute for Crystal Growth - IKZ, Germany); Charlotte Wouters (Leibniz Institute of Crystal Growth, Germany); Martin Albrecht (Leibniz Institute for Crystal Growth - IKZ, Germany); Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Germany)
1:45 Phase Change of Ga2O3 Films Grown by HCl-Enhanced MOCVD: Haiding Sun, Kuang-Hui Li and Carlos Torres-Castanedo (KAUST, Saudi Arabia); Serdal Okur, Gary Tompa and Tom Salagaj (SMI, USA); Xiaohang Li (KAUST, Saudi Arabia)
2:00 [Invited] Growth, Doping and Defects of Homoepitaxial β-Ga203 Grown by Metal Organic Vapor Phase Epitaxy: Martin Albrecht (Leibniz Institute for Crystal Growth - IKZ, Germany)
2:30 Electronic Raman Scattering in 𝛽-Ga2O3: Andreas Fiedler (Leibniz Institute for Crystal Growth - IKZ, Germany); Manfred Ramsteiner (Paul-Drude-Institut für Festkörperelektronik, Germany); Zbigniew Galazka and Klaus Irmscher (Leibniz Institute for Crystal Growth - IKZ, Germany)
2:45 Blue Luminescence Quenching in beta-Ga2O3 Epitaxial Films by Nitrogen Doping: Takeyoshi Onuma (Kogakuin University, Japan); Yoshiaki Nakata (National Institute of Information and Communications Technology, Japan); Kohei Sasaki (Novel Crystal Technology, Inc., Japan); Tatekazu Masui (Tamura Corporation, Japan); Tomohiro Yamaguchi (Kogakuin University); Tohru Honda (Kogakuin University, Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan)

Friday, June 1 3:00 - 3:30

FrCB2: Coffee Break

Friday, June 1 3:30 - 5:45

Fr3A9: Photonics

Room: Salon M

Chair: Arkadiy Lyakh (University of Central Florida, USA)

3:30 [Invited] Silicon Photonics, Optical Phased Arrays, and LiDAR: Michael Watts (MIT, USA)
4:00 Demonstration of 10Gbps Fundamental Optical Logic Gate Operation Using MQW-SOA: Yota Akashi, Shin'e Matsui and Shohei Isawa (Waseda University, Japan); Atsushi Matsumoto (National Institute of Information and Communications Technology, Japan); Yuichi Matsushima (Waseda University, Japan); Hiroshi Ishikawa (Waseda University); Katsuyuki Utaka (Waseda University, Japan)
4:15 Optical NAND Logic Gates Using Light Emitting Transistor (LET): Chi-Wei Wang (National Taiwan University, Taiwan)
4:30 [Invited] Heterogeneous Integration for On-Chip Quantum Photonics with Single InAs Quantum Dots: Marcelo Davanco (NIST, USA)
5:00 Incorporation of InGaAlAs Electroabsorption Modulated Lasers in a Generic InP Photonic Integrated Circuits Platform: Norbert Grote (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Germany)
5:15 Highly Reliable Grown-junction InP/InGaAs Avalanche Photodiodes for High-speed Integrated Optical Receivers: Takumi Endo, Shin-ichi Domoto, Toru Uchida, Masami Ishiura, Ikuo Hanawa, Daisei Shoji, Yoshihiro Yoneda and Atsushi Yasaki (Sumitomo Electric Device Innovations, Inc., Japan)
5:30 Crosstalk Elimination in Infrared Geiger-mode Avalanche Photodiode Arrays: Mohamed Diagne, Richard Younger, Joseph Donnelly, Robert Bailey, William Goodhue, Michael Myszka, K. McIntosh and Erik Duerr (MIT Lincoln Laboratory, USA)

Fr3B9: Nanostructures

Room: DR 3&4

Chair: Allan Bracker (Naval Research Lab, USA)

3:30 Nanoscale Cathodoluminescence Investigation of GaN / AlN Quantum Dot Formation: Frank Bertram and Jürgen Christen (Otto von Guericke University Magdeburg, Germany); Gordon Schmidt (Otto-von-Guericke-University Magdeburg, Germany); Armin Dadgar (Universität Magdeburg, Germany); André Strittmatter (OvGU, Germany); Christoph Berger (University of Magdeburg, Germany); Jürgen Bläsing (OvGU, Germany); Peter Veit (Otto von Guericke University Magdeburg, Germany); Hannes Schürmann (University of Magdeburg, Germany); Sebastian Metzner (Otto von Guericke University Magdeburg, Germany)
3:45 Monitoring the Formation of GaN Nanowires in Molecular Beam Epitaxy by Polarization-Resolved Optical Reflectometry: Gabriele Calabrese (Paul-Drude-Institut für Festkörperelektronik, Germany); Pierre Corfdir (Paul-Drude-Institut, Germany); Apurba Laha (Indian Institute of Technology Bombay, India); Thomas Auzelle, Lutz Geelhaar, Oliver Brandt and Sergio Fernández-Garrido (Paul-Drude-Institut für Festkörperelektronik, Germany)
4:00 [Invited] MBE Growth of GaAs Nanowires Observed in Situ by TEM: Jean-Christophe Harmand (Centre de Nanosciences et de Nanotechnologies, CNRS & Université Paris-Saclay, France)
4:30 Intervalley Scattering and Interband Carrier Dynamics of the Γ3 and Γ1 Energy Bands of InN Using Ultrafast Spectroscopic Techniques: Blair C Connelly, Chad S Gallinat and Michael Wraback (US Army Research Laboratory, USA)
4:45 THz Radiation Excited by Ultrafast Pulses from the Surface of Indium Nitride Nanomaterials: Chan-Shan Yang (National Taiwan Normal University, Taiwan); Tzu-Yuan Huang (National Tsing Hua University, Taiwan); Lung-Hsing Hsu, Tsung-Sheng Kao, Chien-Chung Lin and Hao-Chung Kuo (National Chiao Tung University, Taiwan); Osamu Wada (Kobe University, Japan); Ming-Chang Chou and Wai-Keung Lau (National Synchrotron Radiation Research Center, Taiwan); C. L. Pan (National Tsing Hua University, Taiwan)
5:00 Towards Nanowire HBT: Minority Charge Carrier Transition Through Npn Core-Multishell Nanowires: Lisa M Liborius, Khaled Arzi, Claudia Speich, Werner Prost, Franz-Josef Tegude, Artur Poloczek and Nils Weimann (University of Duisburg-Essen, Germany)
5:15 Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs: Tetsuya Suemitsu (Tohoku University, Japan); Kiattiwut Prasertsuk (National Electronics and Computer Technology Center (NECTEC), Thailand); Tomoyuki Tanikawa (Institute for Materials Research, Tohoku University, Japan); Takeshi Kimura, Shigeyuki Kuboya and Takashi Matsuoka (Tohoku University, Japan)
5:30 200 mm GaN-on-Silicon X-Band Microstrip MMIC with Cu Damascene: Jeffrey LaRoche, Kelly Ip and Theodore Kennedy (Raytheon, USA); Lovelace Soirez (Skorpios, USA); Charles Wang, Azin Zarrasvand, Emily O'neill, William Davis, Clay Long, Eduardo Chumbes, Matthew Walsh, John Bettencourt and Kyle Richard (Raytheon, USA); Tina Trimble (Skorpios, USA); Thomas Kazior (Raytheon, USA)

Fr3C8: Novel Materials & Devices

Room: Salon T

Chair: Lincoln Lauhon (Northwestern University, USA)

3:30 [Invited] Negative Capacitance Transistors: Physics, Materials and the State-of-Art: Asif Khan (Georgia Institute of Technology, USA)
4:00 Negative Capacitance MoS2 FET with Doped HfO2 Ferroelectric/dielectric Gate Stack: Ahmad Zubair, Amirhasan Nourbakhsh, Mark Theng and Tomas Palacios (Massachusetts Institute of Technology, USA)
4:15 Band Gap Tuning Across the Visible Spectrum Without Alloying: Robert Makin III and Krystal York (Western Michigan University, USA); Nancy Senabulya, James Mathis and Roy Clarke (University of Michigan, USA); Nathaniel Feldberg (Université de Lorraine, France); Patrice Miska (Universite de Lorraine, France); Christina Jones, Logan Williams and Emmanouil Kioupakis (University of Michigan, USA); Roger Reeves (University of Canterbury, New Zealand); Steve Durbin (Western Michigan University, USA)
4:30 [Invited] Topological Spintronic Devices: Nitin Samarth (The Pennsylvania State University, USA)
5:00 Silicene-on-silicide Platform: Cameron Volders, Anna Costine and Petra Reinke (University of Virginia, USA)

Fr3F3: Ga2O3 Characterization & Devices

Room: DR 5&6

Chair: Gregg Jessen (Air Force Research Laboratory, USA)

3:30 Ultrafast Dynamics of Carrier and Exciton Recombination in beta-Ga2O3: Okan Koksal and Farhan Rana (Cornell University, USA); Jared Strait (NIST, USA); Nicholas Tanen, Debdeep Jena and Huili Xing (Cornell University, USA)
3:45 Electronic Transport of Donors and Acceptors in β-Ga2O3: Shin Mou and Adam Neal (Air Force Research Laboratory, USA); Subrina Rafique (Case Western Reserve University, USA); Hongping Zhao (The Ohio State University, USA); Elaheh Ahmadi (UC-Santa Barbara, USA); James Speck (UCSB, USA); Darren Thomson, Neil Moser, John Blevins, Kelson Chabak and Gregg Jessen (Air Force Research Laboratory, USA)
4:00 Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs: Joe McGlone, Zhanbo Xia, Chandan Joishi and Siddharth Rajan (The Ohio State University, USA); Steven Ringel (the Ohio State University, USA); Aaron Arehart (The Ohio State University, USA)
4:15 Evaluation of Electrical and Thermal Performance of β-Ga2O3 MOSFETs for RF Operation: Manikant Singh, James Pomeroy, Callum Middleton and Michael J Uren (University of Bristol, United Kingdom (Great Britain)); Michael Casbon and Paul J Tasker (Cardiff University, United Kingdom (Great Britain)); Man Hoi Wong (National Institute of Information and Communications Technology, Japan); Kohei Sasaki (Novel Crystal Technology, Inc., Japan); Akito Kuramata and Shigenobu Yamakoshi (Tamura Corporation, Japan); Masataka Higashiwaki (National Institute of Information and Communications Technology, Japan); Martin Kuball (University of Bristol, United Kingdom (Great Britain))
4:30 Threshold Voltage Engineering in E-mode Ga2O3 Fin-channel Transistors: Wenshen Li, Zongyang Hu, Zexuan Zhang, Kazuki Nomoto and Nicholas Tanen (Cornell University, USA); Kohei Sasaki and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Tohru Nakamura (Hosei University, Japan); Debdeep Jena and Huili Xing (Cornell University, USA)
4:45 P-type Cuprous Iodide Heterojunction with N-type Gallium Oxide: Andrew Koehler (Naval Research Laboratory, USA); Marko J Tadjer (US Naval Research Laboratory, USA); James Gallagher (ASEE Postdoctoral Fellow Residing at Naval Research Laboratory, USA); Glenn Jernigan, Karl Hobart and Fritz Kub (Naval Research Laboratory, USA)
5:00 [Invited] Ga2O3 Vertical Trench SBDs and FETs: Kohei Sasaki, Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Akio Takatsuka and Akito Kuramata (Novel Crystal Technology, Inc., Japan); Shigenobu Yamakoshi (Novel Crystal Technology, Inc.)

Tuesday, May 29

Tuesday, May 29 8:45 - 10:00

Tu1SC1: Short Course I: Materials and Devices for Neuromorphic Applications

Tuesday, May 29 10:00 - 10:15

TuCB1: Coffee Break

Tuesday, May 29 10:15 - 12:30

Tu1SC2: Short Course II: Materials and Devices for Neuromorphic Applications

Tuesday, May 29 12:30 - 1:30

TuLB: Lunch Break

Tuesday, May 29 1:30 - 3:15

Tu1JP1: Joint Plenary I

Tuesday, May 29 3:15 - 3:45

TuCB2: Coffee Break

Tuesday, May 29 3:45 - 5:15

Tu2JP2: Joint Plenary II

Tuesday, May 29 5:15 - 5:45

Tu3AC: Award Ceremony

Tuesday, May 29 6:30 - 8:30

Tu4WR: Welcome reception

Wednesday, May 30

Wednesday, May 30 8:30 - 10:00

We1A1: Narrow Band Gap (Quantum)

We1B1: Wide Band Gap (AlGaN)

We1C1: RF (III-V)

We1D1: Power(Bulk GaN)

Wednesday, May 30 10:00 - 10:30

WeCB1: Coffee Break

Wednesday, May 30 10:30 - 12:30

We2A2: Lasers

We2B2: Wide Band Gap (GaN on Si)

We2C2: RF (Resonat Tunneling Diodes)

We2D2: Power (GaN)

Wednesday, May 30 12:30 - 1:30

WeLB: Lunch Break

Wednesday, May 30 1:30 - 3:00

We3A3: Narrow Band Gap

We3B3: Wide Band Gap

We3C3: RF (Narrow Band Gap)

We3D3: Power (GaN)

Wednesday, May 30 3:00 - 3:30

WeCB2: Coffee Break

Wednesday, May 30 3:30 - 4:45

We4A4: Lasers

We4B4: Wide Band Gap

We4C4: Organic Semiconductors

We4D4: Novel Materials (2D Materials)

Wednesday, May 30 5:00 - 6:30

We5PP-L: Poster Session - Lasers

We5PP-O: Poster Session - Organic and Novel Semiconductors

We5PP-Po: Poster Session - Power Devices

We5PP-RF: Poster Session - RF Devices

We5PP-WBG: Poster Session - Wide Band Gap

Wednesday, May 30 7:00 - 8:30

We6RS: Rump Session: Industrial III-V's: continuing the single life or more fulfillment through marriage with silicon?

Thursday, May 31

Thursday, May 31 8:30 - 10:00

Th1A5: Lasers

Th1B5: Wide Band Gap

Th1C5: Novel Materials & Devices

Th1D5: RF (Power)

Thursday, May 31 10:00 - 10:30

ThCB1: Coffee Break

Thursday, May 31 10:30 - 12:30

Th2A6: Lasers

Th2B6: Wide Band Gap (Nanostructures)

Th2C6: Novel Materials & Devices

Th2D6: Wide Band Gap (Ga2O3)

Thursday, May 31 12:30 - 1:30

ThLB: Lunch Break

Thursday, May 31 1:00 - 7:00

Th3: Excursion to Downtown Boston

Thursday, May 31 7:00 - 8:30

Th4: Conference Banquet

Friday, June 1

Friday, June 1 8:30 - 10:00

Fr15PP-No: Poster Session - Novel metarials and device physics

Fr15PP-NS: Poster Session - Nanostructures

Fr15PP-Opt: Poster Session - Optoelectronics

Fr1PP-Ga: Poster Session - Ga2O3

Friday, June 1 10:00 - 10:30