Program for CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems

Time MOA 3-5 MOA 3-4 MOA 5

Tuesday, March 15

10:30-10:40 Welcome Greetings - Introduction    
10:40-12:20 S01: From Components to Systems    
12:20-13:50 Lunch Break
13:50-15:10 S02: The Quadrilemma of Packaging: Cooling, Parasitics, Insulation and Cost    
15:10-15:40 Tea Break
15:40-17:20 S03: Double-Side Cooled Modules    
18:30-21:30 Get Together (Atrium MOA Mercure Hotel)

Wednesday, March 16

08:30-10:10   S04: Components to be Integrated S05: Reliability (1)
10:10-10:40 Tea Break
10:40-12:20   S06: Bonding Materials and Processes S07: Reliability (2)
12:20-13:50 Lunch Break
13:50-15:10   S08: Thermal Management S09: Advanced Packaging Concepts
15:10-16:10 PO1: Online Poster Session: General aspects of packaging / Power packages and modules,
PO2: Online Poster Session: Clean switching, electromagnetic compatibility,
PO3: Online Poster Session: Reliability,
PO4: Online Poster Session: Components to be integrated & Mechatronic systems and their applications / System and Applications aspects
16:10-17:30 Tea Break,
PB1: Onsite Poster Session: Components to be integrated & Mechatronic systems and their applications / System and Applications aspects,
PB2: Onsite Poster Session General aspects of packaging / Power packages and modules,
PB3: Onsite Poster Session Reliability
19:00-22:00 Conference Dinner (at the Classic Remise, transfer by bus)

Thursday, March 17

08:30-10:10 S10: Reliability (3)    
10:10-10:40 Tea Break
10:40-12:00 S11: Clean Switching, Electromagnetic Compatibility    
12:00-13:20 Lunch Break
13:20-14:20 S12: Inverter Design and Integration    
14:20-15:20 Closing Remarks and Awards Ceremony    

Tuesday, March 15

Tuesday, March 15 10:30 - 10:40

Welcome Greetings - Introduction

Room: MOA 3-5
Chairs: Thomas Harder (European Center for Power Electronics (ECPE e.V.), Germany), Nando Kaminski (University of Bremen, Germany), Andreas Lindemann (University of Magdeburg, Germany), Leo Lorenz (ECPE, Germany)

Tuesday, March 15 10:40 - 12:20

S01: From Components to Systems

Room: MOA 3-5
Chair: Cyril Buttay (Université de Lyon Laboratoire Ampere CNRS UMR 5005 & Insa de Lyon, France)
10:40 Highly Integrated Ultra-Compact Three-PortConverter Systems for Automotive Applications*
Jannik Schäfer and Johann. W. Kolar (ETH Zurich, Switzerland)
11:10 Artificial Intelligence and Long-term Performance of Power Electronics Systems*
Frede Blaabjerg (Aalborg University, Denmark)
11:50 Electric Drive Technologies and Highly Integrated Packaging*
Burak Ozpineci (Oak Ridge National Laboratory, USA)

Tuesday, March 15 12:20 - 13:50

Lunch Break

Tuesday, March 15 13:50 - 15:10

S02: The Quadrilemma of Packaging: Cooling, Parasitics, Insulation and Cost

Room: MOA 3-5
Chairs: Yvan Avenas (Grenoble Université, France), Guo-Quan Lu (Virginia Tech, USA)
13:50 Power Embedding*
Thomas Gottwald (Schweizer Elektronik AG, Germany)
14:20 Review of Electric Field Reduction Methods for Medium-Voltage Power Modules*
Christina DiMarino (Virginia Tech & Center for Power Electronics Systems (CPES), USA); Mark Cairnie (Virginia Tech, USA)
14:50 Power module packaging comprising direct pressed substrate with superior thermal performance and reliability
Matthias Tauer (Vincotech GmbH); Tiago Jappe (Vincotech GmbH, Germany); Tamás Panyik, Gyimóthy Zsolt and Máté Buza (Vincotech Kft, Hungary)

Tuesday, March 15 15:10 - 15:40

Tea Break

Tuesday, March 15 15:40 - 17:20

S03: Double-Side Cooled Modules

Room: MOA 3-5
Chairs: Holger Borcherding (FH Ostwestfalen-Lippe, Germany), Martin Rittner (Robert Bosch GmbH, Germany)
15:40 Efficiency improvement potential of fast switching with new 1200V SiC-DSC-module for automotive traction inverters up to 300kW
Jordan Sorge (Fraunhofer IISB, Germany); Adrian Lis (Infineon Technologies AG, Germany)
16:00 SiC automotive power module with laser welded, ultra low inductive terminals and up to 900Arms phase current
Peter Beckedahl (SEMIKRON International GmbH, Germany); Ingo Bogen and Juergen Steger (Semikron Elektronik GmbH & Co. KG, Germany)
16:20 Advanced cooling concept based on standard power modules significantly improves lifetime
Stefan Buschhorn, Krzysztof Mainka and Klaus Vogel (Infineon Technologies AG, Germany)
16:40 Pareto front system optimization on the example of a motor drive
Stefan Hoffmann (Fraunhofer IZM, Germany); Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany)
17:00 Evaluation of a Nonlinear Resistive Polymer-Nanoparticle Composite for Field-Grading in a Double-Side Cooled 10-kV Silicon Carbide Rectifier Module
Zichen Zhang and Khai Ngo (Virginia Tech, USA); Woongje Sung (SUNY Poly, USA); Guo-Quan Lu (Virginia Tech, USA)

Tuesday, March 15 18:30 - 21:30

Get Together (Atrium MOA Mercure Hotel)

Wednesday, March 16

Wednesday, March 16 8:30 - 10:10

S04: Components to be Integrated

Room: MOA 3-4
Chair: Cyril Buttay (Université de Lyon Laboratoire Ampere CNRS UMR 5005 & Insa de Lyon, France)
8:30 Influence of non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers
Tom Becker (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Norman Boettcher (Schottkystrasse 10 & Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Tobias Erlbacher (Fraunhofer IISB, Germany)
8:50 GaN-HEMT Based Test Setup for Measurement of Core Losses Under DC-Bias
Benedikt Kohlhepp, Daniel Kübrich and Thomas Dürbaum (Friedrich-Alexander University Erlangen-Nürnberg (FAU), Germany)
9:10 3-D Electrothermal Modeling of SiC Multichip Power Modules for a More Accurate Reliability Assessment
Salvatore Race, Roger Stark, Ivana Kovacevic-Badstuebner, Michel Nagel, Thomas Ziemann, Alexander Tsibizov and Ulrike Grossner (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland)
9:30 Substrate Bias Effects up to 400 V of Normally-On GaN-on-AlN/SiC HEMTs in Static and Dynamic Tests
Soeren Heucke (Technische Universität Berlin, Germany); Oliver Hilt (FBH, Germany); Xiaomeng Geng and Carsten Kuring (Technische Universität Berlin, Germany); Joachim Würfl (FBH, Berlin,, Germany); Sibylle Dieckerhoff (TU Berlin, Germany)
9:50 Design and optimization of the driver circuit for non-insulating gate GaN-transistors enabling fast switching and high-frequency operation
Xiaomeng Geng and Carsten Kuring (Technische Universität Berlin, Germany); Oliver Hilt (FBH, Germany); Mihaela Wolf (Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik, Germany); Joachim. Wuerfl (Ferdinand-Braun-Institut, Germany); Sibylle Dieckerhoff (TU Berlin, Germany)

S05: Reliability (1)

Room: MOA 5
Chairs: Ichiro Omura (Kyushu Institute of Technology, Japan), Eckhard Wolfgang (ECPE e. V., Germany)
8:30 Reliability assessment and thermal characterization of automotive power module package based on novel thick copper-ceramic substrate and hard epoxy encapsulation
Mario Sprenger, Freerik Forndran, Bettina Ottinger and Tobias Braun (Vitesco Technologies Germany GmbH, Germany); Jörg Franke (FAU Erlangen-Nuremberg, Germany)
8:50 Accelerated Lifetime Testing and Failure Analysis for Advanced Automotive Grade Ceramic Capacitors (MLCC)
Fabian Dresel (Fraunhofer IISB, Germany); Bianca Boettge (Fraunhofer Institute for Mechanics of Materials IWM, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and System, Germany); Jürgen Leib (Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie, Germany); Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany)
9:10 Aging of Insulation Materials under Repetitive Impulse Voltage Stress with high dv/dt
Albert Claudi (University of Kassel, Germany); Gerrit Braun (SMA Solar Technology AG, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and System, Germany); Robert Klengel (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Peter Zacharias and Xiao Yu (Universität Kassel, Germany)
9:30 In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
Alexander Schiffmacher and Shreyas Malasani (University of Freiburg - IMTEK, Germany); Mario Prescher and Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics, Germany); Jürgen H. Wilde (Universität Freiburg - IMTEK & Microsystems Engineering, Germany)
9:50 Thermal grease pump-out visualizing system for power modules using 3D digital image correlation method
Issei Manzen and Ichiro Omura (Kyushu Institute of Technology, Japan)

Wednesday, March 16 10:10 - 10:40

Tea Break

Wednesday, March 16 10:40 - 12:20

S06: Bonding Materials and Processes

Room: MOA 3-4
Chairs: Christina DiMarino (Virginia Tech & Center for Power Electronics Systems (CPES), USA), Alexander Schiffmacher (University of Freiburg - IMTEK, Germany)
10:40 Silver-free thick film copper bonding for highly reliable metal ceramic substrates
André Schwoebel (Heraeus Deutschland GmbH & Co. KG, Germany); Benjamin Fabian (Heraeus Deutschland GmbH &Co. KG, Germany); Daniel Schnee and Miriam Rauer (Heraeus Deutschland GmbH & Co. KG, Germany); Anton Miric (Heraeus Deutschland GmbH &Co. KG, Germany); Stefan Gunst (Heraeus Deutschland GmbH & Co. KG, Germany)
11:00 Investigation of element enrichment in silicone gels used to encapsu-late inverter modules for renewable power generation
Elisabeth Giebel (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Bianca Boettge (Fraunhofer Institute for Mechanics of Materials IWM, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and System, Germany)
11:20 Self-healing encapsulation material for auto-repairable power module architectures
Baptiste Arati (Laplace, University of Toulouse, UT3 Paul Sabatier & Mitsubishi Electric R&D Centre Europe, France); Vincent Bley (Université de Toulouse UPS INPT LAPLACE, France); Julio Brandelero (Mitsubishi Electric R&D Centre Europe, France); Gilbert Teyssedre (LAPLACE, CNRS, Paul Sabatier University, France)
11:40 Experimental investigation of the influence of different bond tool grooves on the bond quality for ultrasonic thick wire bonding
Oliver Hagedorn (Paderborn University, Germany); Marian Broll and Olaf Kirsch (Infineon Technologies AG Warstein, Germany); Tobias Hemsel (Paderborn University, Germany); Walter Sextro (Universität Paderborn, Germany)
12:00 Design and Evaluation of Building Block for a 100kW DC/DC Converter Based on PCB Process
Johan Le Leslé and Rémi Perrin (Mitsubishi Electric R&D Centre Europe, France); Guillaume Lefèvre (CEA-INES, France); Julien Morand (Mitsubishi Electric R&D Centre Euope, France)

S07: Reliability (2)

Room: MOA 5
Chairs: Peter Friedrichs (Infineon, Germany), Zoubir Khatir (Gustave Eiffel University, France)
10:40 Condition monitoring and evaluation of Ron degradation during power cycling of SiC-Mosfets power modules
Zoubir Khatir and Ali Ibrahim (Gustave Eiffel University, France); Richard Lallemand (IFSTTAR, France); Mounira Berkani (Satie, France); Damien Ingrosso (Gustave Eiffel University, France)
11:00 The limited usability of a ZTC-point in tracking IGBT degradation
Gerd Schlottig (ABB Corporate Research, Switzerland); Marcin Firla (ABB Corporate Technology Center, Poland); Helton Goncalves de Medeiros (ABB Corporate Research, Switzerland); Arttu Halonen, Jonny Ingman and Aleksi Vulli (ABB Drives, Finland); Elena Mengotti (ABB Corporate Research, Switzerland); Enea Bianda (ABB Corporate Research Centre, Switzerland)
11:20 Investigation of long-term drift effects of SiC MOSFETs under power cycling like gate conditions
Carsten Kempiak and Andreas Lindemann (University of Magdeburg, Germany)
11:40 Power Cycling Lifetime of Shunt Resistors in IGBT Modules
Ralf Schmidt, Michael Kaesbauer and Michael Endres (Siemens AG, Germany); Marcel Sippel (Friedrich-Alexander-Universität Erlangen-Nürnberg & Siemens AG, Germany); Pietro Botazzoli (Siemens AG, Germany)
12:00 The Effect of Parallel-Connected Varistor on UIS Robustness of SiC MOSFETs for Solid-State Circuit Breakers Application
Zaiqi Lou, Yunjie Zhu, Shin-ichi Nishizawa and Wataru Saito (Kyushu University, Japan)

Wednesday, March 16 12:20 - 13:50

Lunch Break

Wednesday, March 16 13:50 - 15:10

S08: Thermal Management

Room: MOA 3-4
Chair: Peter Beckedahl (SEMIKRON International GmbH, Germany)
13:50 Packaged β-Ga2O3 Schottky Diodes with Reduced Thermal Resistance by Substrate Thinning to 200 μm
Florian Wilhelmi (University of Magdeburg & ZF Friedrichshafen AG, Germany); Yuji Komatsu (ZF Japan Co., Ltd., Japan); Shinya Yamaguchi, Yuki Uchida and Ryoichi Nemoto (Novel Crystal Technology, Inc., Japan); Andreas Lindemann (University of Magdeburg, Germany)
14:10 Improved Thermal Impedance Measurement for Power Modules based on Thermal Imaging of the Baseplate
Marcel Sippel (Friedrich-Alexander-Universität Erlangen-Nürnberg & Siemens AG, Germany); Ralf Schmidt (Siemens AG, Germany); Fabian Rau, Daniel Bretscher and Reinhardt Seidel (Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany); Jörg Franke (FAU Erlangen-Nuremberg, Germany)
14:30 Module concept for more sustainability without compromising performance: New EconoDUALTM 3 Black Series
Klaus Vogel (Infineon Technologies AG, Germany)
14:50 Development of an over temperature detection method via internal and emulated gate resistance
Chihiro Kawahara and Shinichi Izuo (Mitsubishi Electric Corporation, Japan); Julio Brandelero and Nicolas Degrenne (Mitsubishi Electric R&D Centre Europe, France)

S09: Advanced Packaging Concepts

Room: MOA 5
Chairs: Jean-Luc Schanen (Grenoble Electrical Engineering Laboratory, France), Martin Schneider-Ramelow (Fraunhofer IZM & TU Berlin, Germany)
13:50 Presentation of a Reliable Molded Power-PrePackage
Tina Thomas, Thanh Duy Nguyen and Olaf Raemer (Fraunhofer IZM, Germany); Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany); Chunlei Liu and Niko Pavliček (Hitachi Energy Research, Switzerland); Tanja Braun (Fraunhofer IZM, Germany)
14:10 Feedback Controlled IPM Inverter with Single PCB Rogowski Coil Sensor
Battuvshin Bayarkhuu (Kyushu Institute of Technology, Japan); Bat-Otgon Bat-Ochir (National University of Mongolia, Mongolia); Ichiro Omura (Kyushu Institute of Technology, Japan)
14:30 Quantitative Assessment of the Porosity in Ag-sintered Joints by non- destructive acoustic Inspection supplemented with a Deep Leaning as- sisted Signal Analysis
Sebastian Brand (Fraunhofer Institute for Microstructure of Materials and Systems, IMWS & Electronic Materials and Components, Germany); Michael Kögel (Fraunhofer Institute for Microstructure of Materials and Systems, IMWS, Germany); Frank Altmann (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Hoang Linh Bach (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany)
14:50 Patterning and CTE-matching of contacts to optimize thermomechanical stress in power semiconductor pre-packages
Niko Pavliček, Chunlei Liu and Patrick Stalder (Hitachi Energy Research, Switzerland); Giovanni Salvatore (Ca' Foscari University of Venice, Italy); Till Huesgen (Hochschule Kempten - University of Applied Science, Germany); Tina Thomas (Fraunhofer IZM, Germany); Fabian Mohn (Hitachi Energy Research, Switzerland)

Wednesday, March 16 15:10 - 16:10

PO1: Online Poster Session: General aspects of packaging / Power packages and modules

An Integrated IGBT Module for Dual Inverter Applications
Jianfeng Li, Jiayi Yan and Yuekang Du (Zhuzhou CRRC Times Electric UK Innovation Center, United Kingdom (Great Britain))
Direct / indirect impinging air jet cooling for power devices and application to power electronics system
Shunichiro Nakata (Kyushu Institute of Technology & Omura Lab, Japan); Ichiro Omura (Kyushu Institute of Technology, Japan)
Model reduction for sensitivity analysis of solder joint fracture in power electronic modules
Louis Schuler (Mitsubishi Electric R&D Centre Europe, France); Ludovic Chamoin (Université Paris-Saclay, ENS Paris-Saclay, CNRS, LMT, France); Zoubir Khatir (Gustave Eiffel University, France); Mounira Berkani (Satie, France); Merouane Ouhab (Mitsubishi Electric R&D Centre Europe (MERCE), France); Nicolas Degrenne (Mitsubishi Electric R&D Centre Europe, France)
Development of High Reliability Power SiC Module Platform Packaging for Low Carbon Vehicles
Yangang Wang and Anne Harris (Dynex Semiconductor Ltd, United Kingdom (Great Britain)); Guoyou Liu (CRRC, China)
Reliability Enhancement of High Power Semiconductor Module with Insulated Metal Baseplate and Epoxy Encapsulation
Yangang Wang and Muhammad Morshed (Dynex Semiconductor Ltd, United Kingdom (Great Britain)); Guoyou Liu (CRRC, China)
Stability Modeling for SiC MOSFET Power Modules
Yanfeng Shen, Xiaoting Dong, Tobias Schuetz and Robert Roesner (Danfoss Silicon Power GmbH, Germany)

PO2: Online Poster Session: Clean switching, electromagnetic compatibility

Self-turn-on-free criteria for MOS gate power device and circuit
Takanao Nishio and Ichiro Omura (Kyushu Institute of Technology, Japan)
PCB-Embedded Packaging for Ultra-Fast Switching of SiC MOSFETs
Raffael Risch and Jürgen Biela (ETH Zurich, Switzerland)
Automatic Model Generation for PCB-based Power Electronics
Bahaeddine Ben Hamed (Mitsubishi Electric R&D Centre Europe, Laboratoire Ampère, France); Guillaume Regnat and Guillaume Lefevre (Mitsubishi Electric R&D Centre Europe, France); Cyril Buttay (Université de Lyon Laboratoire Ampere CNRS UMR 5005 & Insa de Lyon, France)
Electromagnetic switching cell design for fast switching semiconductors
Kirill Klein (Fraunhofer IZM, Germany)

PO3: Online Poster Session: Reliability

A gate driver for on-line heat-treatment to extend the lifetime of multichip power modules
Vincent Quemener, Johan Le Leslé, Pierre-Yves Pichon, Julio Brandelero and Nicolas Degrenne (Mitsubishi Electric R&D Centre Europe, France)
PWM power cycling of a multichip power module with active die temperature equalization
Julio Brandelero (Mitsubishi Electric R&D Centre Europe, France)
Use of a SPICE-based Transfer Function to Model the Absolute Humidity in a Power Semiconductor Module
Olivier Quittard (Hitachi Energy, Switzerland); Edoardo Ceccarelli (Hitachi ABB Power Grids, Semiconductors, Switzerland)
Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor
Kanuj Sharma, Jan Hückelheim, Kevin Muñoz Barón, Johannes Ruthardt and Ingmar Kallfass (University of Stuttgart, Germany)
Chemical Substrate Treatment for Improved Pressureless Silver Sintering Adhesion of Power Electronics Dies
Felix Steiner, Helge Wurst and Thomas Blank (Karlsruhe Institute of Technology, Germany)

PO4: Online Poster Session: Components to be integrated & Mechatronic systems and their applications / System and Applications aspects

Rugged and fast short circuit detection method for GaN HEMT based on saturation detection
Jan Schmitz, Markus Meißner and Steffen Bernet (Dresden University of Technology, Germany)
Design of a high-to-low voltage, low-power integrated isolated DC/DC converters for automotive applications
Etienne Foray (University of Lyon & Laboratoire Ampère, France); Bruno Allard (INSA Lyon, France); Christian Martin (Univ Lyon, UCB Lyon 1, CNRS, AMPERE, France)
Inverter Integration Strategy for a Modern Compact Motor Drive based on SiC
Jan Philipp Gördes, Jasper Schnack, Jan Stolley and Ulf Schümann (University of Applied Sciences Kiel, Germany); Ronald Eisele (FH Kiel, Germany)
Algorithmic Optimisation of Chip Dimensions and Layout Pattern in Press-Pack IGBT Devices
Robin Simpson (Dynex Semiconductor, United Kingdom (Great Britain)); Yangang Wang (Dynex Semiconductor Ltd, United Kingdom (Great Britain)); Michael Nicholson and Daniel Bell (Dynex Semiconductor, United Kingdom (Great Britain))

Wednesday, March 16 16:10 - 17:30

Tea Break

PB1: Onsite Poster Session: Components to be integrated & Mechatronic systems and their applications / System and Applications aspects

Chair: Regine Mallwitz (Technische Universität Braunschweig, Germany)
Characterization of 25V GaN d-HEMT Device through Large Signal Gate Charge Measurements and In-Converter Testing
Brendan O'Sullivan and Seamus O'Driscoll (Tyndall National Institute, Ireland); Norbert Fiebig (IHP Microelectronics, Germany); Fouad Benkhelifa (IAF Fraunhofer, Germany); Paul McCloskey and Cian Ó Mathúna (Tyndall National Institute, Ireland)
High-Voltage, Low ESR Solid Electrolyte E-Caps for Automotive applications
Steffen Buhrkal-Donau (University of Southern Denmark, Denmark); Mihaela Gruia (Universty of Southern Denmark, Denmark); Thomas Ebel (University of Southern Denmark, Denmark)
Thermal Performance of an Integrated Heat Spreader for GaN HEMT devices
Faheem Ahmad, Thore Aunsborg, Szymon Beczkowski, Stig Munk-Nielsen and Asger Jørgensen (Aalborg University, Denmark)

PB2: Onsite Poster Session General aspects of packaging / Power packages and modules

Chairs: Reinhold Bayerer (Germany), Peter Friedrichs (Infineon, Germany)
Cooling Concept and Molding Packaging for PV Module Integrated Micro-Inverters
Tobias Manthey (Leibniz University Hannover, Germany); Paul Ranft (OptiMel Schmelzgußtechnik GmbH, Germany); Jens Friebe (Leibniz University Hannover, Germany)
Evaluation of the thermal contact resistance between bulk copper and metal foam using transient measurements
Goulven Janod (Grenoble INP - UGA, France); Yvan Avenas and Didier Bouvard (Grenoble Université, France); Rabih Khazaka (Safran SA, Safran Tech, France)
Laser welding of copper terminals on ceramic substrates for power module packaging
Armin Dellert, Stefan Schirmer, Nadja Kolb and Michael Kimmel (SEMIKRON Elektronik GmbH & Co. KG, Germany); Christian Goebl (Semikron Elektronik GmbH, Germany); Kurt-Georg Besendörfer (SEMIKRON Elektronik GmbH & Co. KG, Germany)
An Embedded Power Section with GaN HEMTs
Tianyu Li (Otto Von Guericke University, Germany); Christian Voigt and Eugen Erhardt (Technische Universität Berlin, Germany); Andreas Lindemann (University of Magdeburg, Germany); Lars Böttcher (Fraunhofer IZM, Germany)
Substrate Integrated Temperature Sensing for Bondless Power Modules
Manuel Riefer (Robert Bosch GmbH, Reutlingen & University of Stuttgart, Germany); Jonathan Winkler and Sebastian Strache (Robert Bosch GmbH, Reutlingen, Germany); Ingmar Kallfass (University of Stuttgart, Germany)

PB3: Onsite Poster Session Reliability

Chairs: Norbert Seliger (Technische Hochschule Rosenheim, Germany), Eckhard Wolfgang (ECPE e. V., Germany)
Reliability investigation of SiC MOSFETs under switching operation in various packages
Christian Schwabe and Nick Thönelt (Technical University of Chemnitz, Germany); Thomas Basler (Chemnitz University of Technology, Germany)
Active Thermal Cycling of Discrete Power Semiconductors for Applications with strong ∆T-Profiles
Daniel Kostynski (KAI GmbH, Austria); Steffen Sack (Infineon Technologies, Villach, Austria); Markus Sievers (KAI GmbH, Austria)
An evaluation of Cu-to-Cu ultrasonic welding bond through thermal cycling
Meghna De (Littelfuse & University of Nottingham, United Kingdom (Great Britain)); Pearl A Agyakwa (University of Nottingham, United Kingdom (Great Britain)); Elaheh Arjmand (Littelfuse, United Kingdom (Great Britain)); Nigel Neate (University of Nottingham, United Kingdom (Great Britain)); Stefan Steinhoff (Littelfuse, United Kingdom (Great Britain)); C Mark Johnson and Bassem Mouawad (University of Nottingham, United Kingdom (Great Britain))
Corrosion in Power Electronics
Markus R. Meier and Helmut Schweigart (ZESTRON Europe, Germany)
AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFET
Walter Goncalez Filho (Ghent University & IMEC, Belgium); Matteo Borga, Karen Geens, Deepthi Cingu and Urmimala Chatterjee (Imec, Belgium); Shuzhen You (IMEC, Belgium); Benoit Bakeroot (Ghent University, Belgium); Stefaan Decoutere (Imec, Belgium); Werner Knaepen, Panagiota Armou and Pia Homm (Asm, Belgium)
Large surface area substrate attach in power module applications
Battist Rabay and Adrian Stelzer (Nano-Join GmbH, Germany)
Change in SiC MOSFET body diode voltage drop in TO-247 packages during inverse mode and forward mode power cycling test
Bhanu Pratap Singh and Amin Farjah (KTH Royal Institute of Technology, Sweden); Khaled Choudhury (GE Renewable Energy, United Kingdom (Great Britain)); Staffan Norrga (KTH, Royal Institute of Technology, Sweden); Hans-Peter Nee (KTH Royal Institute of Technology & EES/E2C, Sweden)
Potential failure modes of cement-based encapsulation concepts for reliable power electronics
Falk Naumann (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and System, Germany); Bianca Boettge (Fraunhofer Institute for Mechanics of Materials IWM, Germany)
Investigation of reliability issues in sintered silver interconnected power devices and its lifetime prediction by FEM and experiment
Anu Mathew (Technische Universität Chemnitz & Zentrum Für Mikrotechnologien, Germany); Rainer Dudek (Fraunhofer Institute for Electronic Nano Systems, Germany)
Measuring the carriers' multiplication in Si and SiC power devices by alpha and gamma radioactive sources
Marco Pocaterra and Mauro Ciappa (ETH Zurich, Switzerland)

Wednesday, March 16 19:00 - 22:00

Conference Dinner (at the Classic Remise, transfer by bus)

Thursday, March 17

Thursday, March 17 8:30 - 10:10

S10: Reliability (3)

Room: MOA 3-5
Chairs: Nando Kaminski (University of Bremen, Germany), Norbert Seliger (Technische Hochschule Rosenheim, Germany)
8:30 GaN Reliability and Lifetime Projections*
Alexander Lidow (Efficient Power Conversion Corporation, USA)
9:10 Qualifying a Silicon Carbide Power Module: Reliability Testing Beyond the Standards of Silicon Devices*
Paul Salmen (Infineon Technologies AG, Germany); Peter Friedrichs (Infineon, Germany)
9:40 Perspective on Condition and Health Monitoring of Power Electronic Converters*
Huai Wang, Yingzhou Peng and Xing Wei (Aalborg University, Denmark)

Thursday, March 17 10:10 - 10:40

Tea Break

Thursday, March 17 10:40 - 12:00

S11: Clean Switching, Electromagnetic Compatibility

Room: MOA 3-5
Chairs: Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany), Jean-Luc Schanen (Grenoble Electrical Engineering Laboratory, France)
10:40 Sub-Nanosecond Transient Analysis of SiC MOSFET Switching: "Sensor Gap TLP" as a Versatile Characterization Method with Very High Temporal Resolution
Gerhard Groos (University of the Federal Armed Forces Munich, Germany); Dennis Helmut (University of the Federal Armed Forces Munich, Germany & Technische Universität München, Germany); Gerhard Wachutka and Gabriele Schrag (Technische Universität München, Germany)
11:00 EMI mitigation by substrate integrated common mode filter
Norbert Seliger and Eduard Dechant (Technische Hochschule Rosenheim, Germany); Ralph Kennel (Technical University of Munich, Germany)
11:20 Study of parasitic oscillations in trench IGBT during short-circuit type II based on signal flow graph model
Hiroshi Kono and Ichiro Omura (Kyushu Institute of Technology, Japan)
11:40 Temperature compensated M-shunts for fast transient and low inductive current measurements
Hauke Lutzen (University of Bremen, Germany); Vladimir Polezhaev and Keshar Bahadur Rawal (Hochschule Kempten, Germany); Kayesar Ahmmed (University of Bremen, Germany); Till Huesgen (Hochschule Kempten - University of Applied Science, Germany); Nando Kaminski (University of Bremen, Germany)

Thursday, March 17 12:00 - 13:20

Lunch Break

Thursday, March 17 13:20 - 14:20

S12: Inverter Design and Integration

Room: MOA 3-5
Chairs: Christina DiMarino (Virginia Tech & Center for Power Electronics Systems (CPES), USA), Regine Mallwitz (Technische Universität Braunschweig, Germany)
13:20 Integration of power electronic circuits using Coated Metal Interconnect Devices (CMID)*
Holger Borcherding (Ostwestfalen-Lippe University of Applied Sciences and Arts & Lenze SE, Germany); André Springer, Patrick Ehlert and Tobias Mueller (Ostwestfalen-Lippe University of Applied Sciences and Arts, Germany); Andreas Tolksdorf (Lenze SE, Germany)
13:50 Performance Evaluation of a GaN Flying Capacitor Multilevel Inverter for Industrial Applications*
Hartwig Raphael and Alexander Hensler (Siemens AG, Germany); Thomas Ellinger (TU Ilmenau, Germany)

Thursday, March 17 14:20 - 15:20

Closing Remarks and Awards Ceremony

Room: MOA 3-5
Chairs: Thomas Harder (European Center for Power Electronics (ECPE e.V.), Germany), Leo Lorenz (ECPE, Germany)

During the closing ceremony following awards will be granted:

  • The Best Poster Award
  • The ECPE Young Engineer Award for the Best Paper
  • The Semikron Innovation & Young Engineer Award

Program last updated on Mar 15, 2022 10:22 UTC