Program for CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems

Time Reithalle 2nd Lecture Hall

Tuesday, March 20

10:00-10:10 Introduction  
10:10-11:50 Clean switching, electromagnetic compatibility (EMC)  
11:50-13:20 Lunch break
13:20-15:00 EMC, Components to be integrated  
15:00-15:30 Tea break
15:30-17:00 Reliability (1)  
17:00-17:20 Break
17:20-18:30 Reliability (2)  
19:00-22:00 Get Together + Poster Session

Wednesday, March 21

08:30-10:10 S2.1: General aspects of packaging (1/2) S4: Mechatronic systems and their applications
10:10-10:40 Tea break
10:40-12:20 S2.2: General aspects of packaging (2/2) S5.1: Condition Monitoring (Reliability (1/2)
12:20-13:50 Lunch break
13:50-15:30 S1.1: Components to be integrated (1/2) S5.2: Degradation of Interconnects (Reliability (2/2)
15:30-16:00 Tea break
16:00-17:00 S.1.2: Components to be integrated (2/2) S6.1: EMI (Clean switching, electromagnetic compatibility (1/2)
16:20-17:20 S3.1: Power packages and modules (1/2)
17:20-17:40 Break
17:40-19:00 S3.2: Power packages and modules (2/2) S6.2: Clean switching, electromagnetic compatibility (2/2)
19:30-22:00 Dinner

Thursday, March 22

08:30-10:10 Mechatronic systems and their applications  
10:10-10:40 Tea break
10:40-12:10 Packaging (1)  
12:10-13:40 Lunch break
13:40-14:20 Packaging (2)  
14:20-14:30 Closing remarks  
14:30-14:45 Ceremony: CIPS Young Engineer Award , CIPS Best Poster Award  
14:45-15:15 Ceremony: Semikron Innovation and Young Engineer Award  

Tuesday, March 20

Tuesday, March 20, 10:00 - 10:10

Introduction

Room: Reithalle
Chairs: Nando Kaminski (University of Bremen, Germany), Andreas Lindemann (University of Magdeburg, Germany)

Tuesday, March 20, 10:10 - 11:50

Clean switching, electromagnetic compatibility (EMC)

Room: Reithalle
Chair: Andreas Lindemann (University of Magdeburg, Germany)
10:10 Integration solutions for clean and safe switching of high speed devices
Jean-Luc Schanen (Grenoble Electrical Engineering Laboratory, France); Pierre-Olivier Jeannin (Grenoble Université, France)
10:50 Review of Parasitic Minimization Techniques for High Frequency Power Conversion
David Reusch (Efficient Power Conversion (EPC), USA)
11:20 A Fully-Isolated Robust Common-Mode Hybrid Filter
Stefan Mollov (Mitsubishi Electric R&D Centre Europe, France); Luc Rambaud (MERCE, France)

Tuesday, March 20, 11:50 - 13:20

Lunch break

Rooms: 2nd lecture hall, Reithalle

Tuesday, March 20, 13:20 - 15:00

EMC, Components to be integrated

Room: Reithalle
Chair: Leo Lorenz (ECPE, Germany)
13:20 Electromagnetic noise induced by novel high voltage fast switching device
Tsuyoshi Funaki (Osaka University, Japan)
14:00 Future Requirements for PE - Silicon versus GaN versus SiC based power devices , comparison of key parameters with respect to use in power electronics
Gerald Deboy (Infineon Technologies Austria AG, Austria)
14:30 Frequency Optimum of Semiconductor Technologies and State-of-the-Art Magnetic Components in SMPS
Tobias Reimann (Technische Universität Ilmenau, Germany)

Tuesday, March 20, 15:00 - 15:30

Tea break

Rooms: 2nd lecture hall, Reithalle

Tuesday, March 20, 15:30 - 17:00

Reliability (1)

Room: Reithalle
Chairs: Uwe Scheuermann (Semikron Elektronik GmbH & Co. KG, Germany), Eckhard Wolfgang (ECPE e. V., Germany)
15:30 Test Strategy in Industrial Product Development
Lars Rimestad (Grundfos, Denmark)
16:00 Automotive Qualification Routines for Power Electronics Components in Electrified Powertrains
Martin Rittner (Robert Bosch GmbH, Germany); Markus Thoben (Infineon Technologies AG, Germany); Kai Kriegel (Siemens AG, Germany)
16:30 Condition and Health Monitoring in Power Electronics
Stefan Mollov (Mitsubishi Electric R&D Centre Europe, France); Frede Blaabjerg (Aalborg University, Denmark)

Tuesday, March 20, 17:00 - 17:20

Break

Rooms: 2nd lecture hall, Reithalle

Tuesday, March 20, 17:20 - 18:30

Reliability (2)

Room: Reithalle
Chairs: Eckhard Wolfgang (ECPE e. V., Germany), Uwe Scheuermann (Semikron Elektronik GmbH & Co. KG, Germany)
17:20 Analytics for Power Electronic Components - Methods to figure out root causes of failures
Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and System, Germany); Bianca Boettge (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Matthias Petzold (Fraunhofer Insitute for Microstructure of Materials and Systems IMWS, Germany)
17:50 Limitation of Power Module Lifetime Derived from Active Power Cycling Tests
Uwe Scheuermann and Marion Junghänel (Semikron Elektronik GmbH & Co. KG, Germany)

Tuesday, March 20, 19:00 - 22:00

Get Together + Poster Session

Rooms: 2nd lecture hall, Reithalle
A mitigation solution for bifurcations in a low-power 4-Switch Buck-Boost converter (4SBB)
Amokrane Malou (University of Lyon & ON Semiconductor, France); Bruno Allard, Xuefang Lin-Shi and Alaa Hijazi (INSA Lyon, France); Berengere Le Men (ON Semiconductor, France)
Identifying the Stray Elements of the Experimental Setup Used in the Semiconductor Datasheets
Mylene Delhommais, Jean-Luc Schanen, Yvan Avenas and Frédéric Wurtz (Univ. Grenoble Alpes, CNRS, Grenoble INP, G2Elab, F-38000 Grenoble, France); Cecile Rigaud and Sylvain Chardon (Tronico, France)
A Novel Gate Driving Approach to Balance the Transient Current of Parallel-Connected GaN-HEMTs
Jonathan Hackel, Michael Ebli and Martin Pfost (TU Dortmund, Germany)
Impedance analysis in a co-planar power bus interconnect prototype for low inductance switching
Xi Lin (University of Nottingham, United Kingdom (Great Britain)); Jianfeng Li (The University of Nottingham, United Kingdom (Great Britain)); C Mark Johnson (University of Nottingham, United Kingdom (Great Britain))
A correlative approach to observing the thermomechanically driven microstructural evolution of ultrasonically bonded copper wires
Bassem Mouawad, Pearl A Agyakwa, Martin Corfield and C Mark Johnson (University of Nottingham, United Kingdom (Great Britain))
Novel specimen design to test engineering plastics for power electronic applications
Bianca Boettge and Rico Bernhardt (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Sandy Klengel (Fraunhofer Institute for Microstructure of Materials and Systems IMWS); Sebastian Wels and Albert Claudi (University of Kassel, Germany)
Investigations on the evolution of dynamic Ron of GaN power transistors during switching cycles
FEM based enhancement of system lifetime by improvement of the die top connection of power electronic semiconductors
Andreas Klein (Heraeus Deutschland GmbH &Co. KG, Germany); Martin Becker (Danfoss Silicon Power GmbH, Germany); Anton Miric, Benjamin Fabian, Andreas Hinrich and Marko Kalajica (Heraeus Deutschland GmbH &Co. KG, Germany); Wolfgang Schmitt (Heraeus Materials Technology Gmbh & Co. KG, Germany)
Vibrational resistance investigation of an IGBT gate driver utilizing frequency response analysis and highly accelerated life test (HALT)
Thomas Schriefer (University of Erlangen-Nuremberg & Chair of Electron Devices, Germany); Maximilian Hofmann (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Martin März (FhG Erlangen, Germany)
Analysis of Transient Thermal-Mechanical Stresses in Power Devices Using Test Chips and Optical Techniques
Markus Feisst (Universität Freiburg - IMTEK, Germany); Eike Möller (Albert-Ludwigs-Universität Freiburg & Institut für Mikrosystemtechnik-IMTEK, Germany); Jürgen Wilde (Universität Freiburg - IMTEK, Germany)
Lifetime Testing Method for Ceramic Capacitors for Power Electronics Applications
Fabian Dresel, Nils Tham and Tobias Erlbacher (Fraunhofer IISB, Germany); Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany)
An Investigation of Frequency Response Analysis Method for Junction Temperature Estimation of SiCs Power Device
Xiang Lu and Cuili Chen (Newcastle University, United Kingdom (Great Britain)); Maher Al-Greer (Teesside University, United Kingdom (Great Britain)); Volker Pickert and Charalampos C. Tsimenidis (Newcastle University, United Kingdom (Great Britain))
Solder layer degradation measurement for SiC-MOSFET Modules under accelerated power cycling conditions
Haoze Luo, Francesco Iannuzzo and Frede Blaabjerg (Aalborg University, Denmark)
In-situ condition monitoring system to study the ageing of power semi-conductor devices in photovoltaic inverters
Mouhannad Dbeiss (CEA-INES, France); Yvan Avenas (Grenoble Université, France); Henri Zara (CEA-INES, France); Laurent Dupont (IFSTTAR, France)
Pressure less sintering of large dies by infrared radiation
Wolfgang Schmitt (Heraeus Materials Technology Gmbh & Co. KG, Germany); Ly May Chew (Heraeus Deutschland GmbH & Co. KG, Germany); Robert Miller (Hochschule Aschaffenburg, University of Applied Sciences, Germany)
Integrated LED Driver based on 800V Si L-IGBTs
Attahir Murtala Aliyu (University of Nottingham, United Kingdom (Great Britain)); Alwyn Elliott (Imperial College, United Kingdom (Great Britain)); Vasantha Pathirana and Nishad Udugampola (University of Cambridge, United Kingdom (Great Britain)); Pushparajah Rajaguru (University of Greenwich, United Kingdom (Great Britain)); Alberto Castellazzi (University of Nottingham & Power Electronics, Machines and Control Group, United Kingdom (Great Britain)); Paul Mitcheson (Imperial College London, United Kingdom (Great Britain)); Tanya Trajkovic (Camutronics, United Kingdom (Great Britain)); Florin Udrea (University Of Cambridge, United Kingdom (Great Britain)); Christopher Bailey (University of Greenwich, United Kingdom (Great Britain))
Electrochemical Corrosion on Ceramic Substrates for Power Electronics - Causes, Phenomenological Description, and Outlook
Christoph Friedrich Bayer and Antonia Diepgen (Fraunhofer Institute for Integrated Systems and Device Technology, Germany); Thomas Filippi (Fraunhofer IISB, Germany); Carmen Fuchs, Sophie Wüstefeld, Simon Kellner and Uwe Waltrich (Fraunhofer Institute for Integrated Systems and Device Technology, Germany); Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany)
Fabrication of PCB embedded 1200V/50A power module and benchmarking with commercial DBC based package
Ankit Bhushan Sharma, Johann Schnur, Niko Haag, Thomas Kuwan, Armin Stogel and Till Huesgen (Hochschule Kempten - University of Applied Science, Germany)
Influence of Dielectric Constant on Partial Discharge Inception Voltage of Ceramic Insulating Substrate under High Temperature
Tsuyoshi Abe, Michiya Suenaga and Akihiro Imakiire (Kyushu Institute of Technology, Japan); Masahiro Kozako and Masayuki Hikita (Kyusyu Institute of Technology, Japan); Takashi Nishimura, Hiroki Shiota and Hirotaka Muto (Mitsubishi Electric Corporation, Japan)
On the reliability of stacked metallized ceramic substrates under thermal cycling
Bassem Mouawad (University of Nottingham, United Kingdom (Great Britain)); Jianfeng Li (The University of Nottingham, United Kingdom (Great Britain)); Alberto Castellazzi (University of Nottingham & Power Electronics, Machines and Control Group, United Kingdom (Great Britain)); C Mark Johnson (University of Nottingham, United Kingdom (Great Britain))
Novel PD Location Algorithm for Next Generation Power Module using Small Loop Sensors
Jyunya Maki and Yuya Akinaga (Kyushu Institute of Technology, Japan); Masahiro Kozako and Masayuki Hikita (Kyusyu Institute of Technology, Japan); Yoko NAkamura, Yoshinari Ikeda, Katsumi Taniguchi and Kenji Okamoto (Fuji Electric Co., Ltd, Japan)
Vias in DBC Substrates for Embedded Power Modules
Hoang Linh Bach, Zechun Yu and Sebastian Letz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Christoph Friedrich Bayer and Uwe Waltrich (Fraunhofer Institute for Integrated Systems and Device Technology, Germany); Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Martin März (FhG Erlangen, Germany)
Thermal Characteristic Evaluation and Transient Thermal Analysis of Next-generation SiC Power Module at 250 °C
Akihiro Imakiire (Kyushu Institute of Technology, Japan); Masahiro Kozako and Masayuki Hikita (Kyusyu Institute of Technology, Japan); Kohei Tatsumi, Masakazu Inagaki and Tomonori Iizuka (Waseda University, Japan); Hiroaki Narimatsu, Nobuaki Sato, Koji Shimizu and Kazutoshi Ueda (Mitsui High-tec Inc., Japan); Kazuhiko Sugiura (Denso Corporation, Japan); Kazuhiro Tsuruta and Makio Iida (DENSO Corporation, Japan); Keiji Toda (TOYOTA MOTOR Corporation, Japan)
Simulation of the Thermal Transient Behaviour of Silicon Carbide Modules Using Liquid Convection Cooling
Ulf Müter (Helmut Schmidt University, Germany); Jens Radvan (Philips Medical Systems, Germany); Stefan Richter (Philips Medical Systems, United Kingdom (Great Britain)); Klaus Hoffmann (Helmut-Schmidt-Universität, Germany)
A SiC MOSFET power module with integrated gate drive for 2.5 MHz Class E resonant converters
Asger Jørgensen (Aalborg University, Denmark); Unnikrishnan Nair (Universitat Politechnica de Catalunya, Denmark); Stig Munk-Nielsen and Christian Uhrenfeldt (Aalborg University, Denmark)
A High Performance 1200V/120A SiC Power Module Based On a Novel Multi-DBCs Hybrid Packaging Structure
Yuxiong Li, Cai Chen, Zhizhao Huang and Lichuan Chen (Huazhong University of Science and Technology, P.R. China); Kaifeng Zou (Naval Aeronautical Engineering University Qingdao Branch, P.R. China); Yong Kang (Huazhong University of Science and Technology, P.R. China); Fang Luo (University of Arkansas, P.R. China); Sichao Li (Huazhong University of Science and Technology, P.R. China)
Direct Copper Bonding (DCB) alumina substrates with pre-applied solder pads for simplified die soldering and improved manufacturing yield
Hans-Jürgen Richter, Pan Liu and Michael Schaefer (Heraeus Electronics, Germany); Dieter Watzal (Heraeus Deutschland, Germany); Sebastian Fritzsche (Heraeus Materials Technology GmbH & Co. KG, Germany); Christophe Féry (Heraeus Electronics, Germany)
Reliability Design of Dual Sided Cooled Power Semiconductor Module for Hybrid and Electric Vehicles
Yangang Wang (Dynex Semiconductor Ltd, United Kingdom (Great Britain))
A Novel Double Sided Cooled Leadframe Power Module for Automotive Application based on ceramic-free Substrates
Bao Ngoc An (Karlsruhe Institute of Technology, Germany); Johannes Kolb (SHARE at KIT, Germany); Thomas Blank, Benjamin Leyrer and Marc Weber (Karlsruhe Institute of Technology, Germany); Dorit Nötzel (Karlsruher Institut für Technologie (KIT), Germany); Thomas Hanemann (Karlsruhe Institute of Technology (KIT), Germany); Horst Demattio (Karlsruhe Institute of Technology, Germany); Peter Kästner (Karlsruhe Institute of Technology (KIT), Germany); Michael Meisser, Torsten Scherer and Matthias Mail (Karlsruhe Institute of Technology, Germany)
Effects of different working frequencies on the joint formation in copper wire bonding
Reinhard Schemmel (University of Paderborn, Germany); Simon Althoff (Universität Paderborn, Germany); Michael Brökelmann, Andreas Unger and Matthias Hunstig (Hesse GmbH, Germany); Walter Sextro (Universität Paderborn, Germany)
Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules
Li Yang, Pearl A Agyakwa, Martin Corfield and C Mark Johnson (University of Nottingham, United Kingdom (Great Britain)); Anne Harris and Matthew Packwood (Dynex Semiconductor Ltd, United Kingdom (Great Britain)); Krzysztof Paciura (Cummins Inc, United Kingdom (Great Britain))
Innovative Reliable Nitride based Power Devices and Applications ‒ The EU Public Funded Project 'InRel-NPower'
Martin Rittner and Ulrich Kessler (Robert Bosch GmbH, Germany); Joerg Naundorf, Kai Kriegel and Martin Schulz (Siemens AG, Germany); Gaudenzio Meneghesso (University of Padova, Italy)
Benchmarks of the gate driver supplies' architectures for the power devices in series connection
Van Sang Nguyen (Grenoble Institute of Technology & G2ELab, France); Pierre Lefranc (University of Grenoble Alpes, France); Jean-Christophe Crebier (Grenoble Université, France)
SMPS electromagnetic noise in System-on-Chip: Resonant frequency and amplitude dependencies
Eric Feltrin (Ecole Centrale de Lyon & STMicroelectronics, France); David Chesneau (STMicroelectronics, France); Christian Vollaire (Ampere Lab, France); Bruno Allard (INSA Lyon, France)
Optimizing integrated common and differential mode chokes with the PermeabilityLink method
Thermistor Die for Power Module Applications
Sophie Schuurman, Erik Mattens and Bruno Van Beneden (Vishay Resistors Belgium, Belgium); Emilio Mattiuzzo and Marcello Turnaturi (Vishay Semiconductor Italiana, Italy)
C-V Characterization Technique for Four-Terminal GaN-on-Si HEMTs Based on 3-Port S-Parameter Measurements
Cristino Salcines (University of Stuttgart); Stefan Moench (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Germany); Ingmar Kallfass (University of Stuttgart, Germany); Boris Spudic (Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Germany)
Die-bonding performance of micron Ag particle paste for high power devices
Tetsu Takemasa (Osaka University, Japan); Minoru Ueshima (Senju Metal Industry, Japan); Jiu Jinting and Junko Seino (Senju Metal Industry Co., Ltd., Japan); Katsuaki Suganuma (Osaka University, Japan)
Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application
Kenya Kobayashi and Masaki Sudo (Kyushu Institute of Technology); Ichiro Omura (Kyushu Institute of Technology, Japan)
Surge Current Capability of IGBTs Used in Low Voltage DC/AC Hybrid Circuit Breaker
Kenan Askan and Michael Bartonek (Eaton Industries GmbH, Austria); Klaus Sobe (Infineon Technologies Austria AG, Austria)
A High Efficiency and Power Density, High Step-Up, Non-isolated DC-DC Converter Based on Multicell Approach
André Andreta (Universite Grenoble Alpes, France); Yves Lembeye (Grenoble Electrical Engineering Laboratory, France); Lyubomir Kerachev (Universite Grenoble Alpes, France); Farshid Sarrafin (University of Grenoble (des Alpes) & G2Elab, France); Luiz Fernando Villa (Universite de Toulouse, France); Jean Christophe Crebier (Université Grenoble Alpes, France)
How asymmetric busbar design causes symmetric switching behavior of paralleled IGBT modules
Matthias Wissen (Infineon Technologies AG, Germany); Daniel Domes (Infineon Technologies AG & Warstein, Germany); Waleri Brekel and Koray Yilmaz (Infineon Technologies AG, Germany)
Ferrite embedding for Power SiPs - a packaging view
Tina Thomas (Technische Universität Berlin, Germany); Stefan Hoffmann, Karl-Friedrich Becker, Hans Walter, Volker Bader and Tanja Braun (Fraunhofer IZM, Germany); Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany); Martin Schneider-Ramelow (Fraunhofer IZM & TU Berlin, Germany)

Wednesday, March 21

Wednesday, March 21, 08:30 - 10:10

S4: Mechatronic systems and their applications

Room: 2nd lecture hall
Chairs: Sibylle Dieckerhoff (TU Berlin, Germany), Klaus Hoffmann (Helmut-Schmidt-Universität, Germany)
08:30 Parasitic Extraction Procedures for SiC Power Modules
Ivana Kovacevic-Badstuebner and Roger Stark (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland); Mattia Guacci (Power Electronic Systems Laboratory, ETH Zurich, Switzerland); Johann. W. Kolar (ETH Zurich, Switzerland); Ulrike Grossner (Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland)
08:50 Applying magnetoresistive current sensors in difficult operating environments
Rolf Slatter and Matthias Brusius (Sensitec GmbH, Germany); Claudia Glenske (Sensitec GmbH)
09:10 Comparison of the Surge Current Ruggedness between the Body Diode of SiC MOSFETs and Si Diodes for IGBT
Patrick Hofstetter and Mark Bakran (University of Bayreuth, Germany)
09:30 Integration Concept for a Traction Inverter with 3D-Printed Embedded Cooling Technology realizing Highest Power Density
Jasper Schnack, Ulf Schümann and Dominik Hilper (Fachhochschule Kiel, Germany); Ronald Eisele (FH Kiel, Germany); Thomas Ebel (FTCAP GmbH, Germany); Frank Osterwald and Holger Beer (Danfoss Silicon Power GmbH, Germany)
09:50 Grid-Connected Three-Phase H-Bridge Inverter with Level Doubling Network Controlled by Staircase Modulation Techniques
Milan Srndovic, Aleksandr Viatkin and Gabriele Grandi (University of Bologna, Italy)

S2.1: General aspects of packaging (1/2)

to be continued
Room: Reithalle
Chair: Jürgen H. Wilde (Albert-Ludwigs-Universität Freiburg, Germany)
08:30 Thermo-mechanical stress and deformation behaviour of joined semiconductor devices using different die attach technologies
Falk Naumann, Bianca Boettge, Georg Lorenz and Michael Bernasch (Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany); Christina Ebensperger and Stefan Oehling (SEMIKRON Elektronik GmbH & Co. KG, Germany)
08:50 Silver sinter paste optimized for pressure sintering under air atmosphere on precious and non-precious metal surfaces with high reliable sintered joints
Ly May Chew (Heraeus Deutschland GmbH & Co. KG, Germany); Wolfgang Schmitt (Heraeus Materials Technology Gmbh & Co. KG, Germany); Jens Nachreiner and Stefan Gunst (Heraeus Deutschland GmbH & Co. KG, Germany)
09:10 Improvement of power module system solders by directional solidification
Aaron Hutzler, Christoph Oetzel and Emil Friker (PINK GmbH Thermosysteme, Germany)
09:30 Power Chip Interconnections Based on TLP, Sintering and CTE-Matched Conductors
Markus Feisst, Philip Schaetzle and Jürgen Wilde (Universität Freiburg - IMTEK, Germany)
09:50 Additive Manufacturing of 3D-copper-metallizations on alumina by means of Selective Laser Melting for power electronic applications
Thomas Stoll (Friedrich-Alexander-Universität Erlangen-Nürnberg & Lehrstuhl für Fertigungsautomatisierung und Produktionssystematik (FAPS), Germany)

Wednesday, March 21, 10:10 - 10:40

Tea break

Rooms: 2nd lecture hall, Reithalle

Wednesday, March 21, 10:40 - 12:20

S5.1: Condition Monitoring (Reliability (1/2)

Room: 2nd lecture hall
Chairs: Nicolas Degrenne (Mitsubishi Electric R&D Centre Europe, France), Andreja Rojko (ECPE, Germany)
10:40 Signal Sweeping Technique to Decouple the Influence of Junction Temperature and Bond Wire Lift-off in Condition Monitoring for Multichip IGBT Modules
Cuili Chen and Volker Pickert (Newcastle University, United Kingdom (Great Britain)); Maher Al-Greer (Teesside University, United Kingdom (Great Britain)); Charalampos C. Tsimenidis (Newcastle University, United Kingdom (Great Britain)); Thillainathan Logenthiran (Newcastle University, Singapore); Xiang Lu (Newcastle University, United Kingdom (Great Britain)); Ng Chong and Chunjiang Jia (ORE Catapult, United Kingdom (Great Britain))
11:00 Real-time condition monitoring of IGBT modules in PV inverter systems
Uimin Choi and Frede Blaabjerg (Aalborg University, Denmark)
11:20 Investigation of the usage of a chip integrated sensor to determine junction temperature during power cycling tests
Carsten Kempiak (Otto-von-Guericke-Universtität Magdeburg, Germany); Andreas Lindemann (Otto-von-Guericke-Universität Magdeburg); Eckhard Thal and Shiori Idaka (Mitsubishi Electric Europe B. V., Germany)
11:40 On-line Virtual Junction Temperature Measurement via DC Gate Current Injection
Julio Brandelero, Jeffrey Ewanchuk and Stefan Mollov (Mitsubishi Electric R&D Centre Europe, France)
12:00 Current filament monitoring under unclamped inductive switching conditions on real IGBT interconnection
Masanori Tsukuda (Green Electronics Research Institute, Kitakyushu, Japan); Takaaki Arimoto and Ichiro Omura (Kyushu Institute of Technology, Japan)

S2.2: General aspects of packaging (2/2)

Room: Reithalle
10:40 Full SiC Integrated Power Converter Module with Replaceable Building Blocks
Attahir Murtala Aliyu (University of Nottingham, United Kingdom (Great Britain)); Alberto Castellazzi (University of Nottingham & Power Electronics, Machines and Control Group, United Kingdom (Great Britain)); Philippe Lasserre (Primes Association, France); Nicola Delmonte (Università di Parma, Italy); Paolo Cova (University of Parma, Italy)
11:00 Making Thermal Grease Obsolete: Fully Isolated Discrete Power Package with High Thermal and Electrical Performance
Thomas Basler, Christian Kasztelan and Daniel Pedone (Infineon Technologies AG, Germany); Edward Fürgut (Infineon Technolgies AG, Germany); Matthias Schmidt (Infineon Technologies AG, Germany)
11:20 Transfer molding for power semiconductor modules
Jürgen Schuderer and Viktor Lindström (ABB Corporate Research, Switzerland); Chunlei Liu (ABB Switzerland Ltd. Corporate Research, Switzerland); Fabian Mohn (ABB Corporate Research, Switzerland)
11:40 Thermal and thermo-mechanical design of an integrated substrate and heat sink for planar power module
Jianfeng Li (The University of Nottingham, United Kingdom (Great Britain)); Xi Lin, Jingru Dai, Bassem Mouawad and C Mark Johnson (University of Nottingham, United Kingdom (Great Britain))
12:00 Design and Fabrication of PCB Embedded Power Module with Integrated Heat Exchanger for Dielectric Coolant
Johann Schnur, Ankit Bhushan Sharma, Niko Haag and Thomas Kuwan (Hochschule Kempten - University of Applied Science, Germany); Armin Stogel (Hochschule Kempten, Germany); Till Huesgen (Hochschule Kempten - University of Applied Science)

Wednesday, March 21, 12:20 - 13:50

Lunch break

Rooms: 2nd lecture hall, Reithalle

Wednesday, March 21, 13:50 - 15:30

S5.2: Degradation of Interconnects (Reliability (2/2)

Room: 2nd lecture hall
Chairs: Martin Rittner (Robert Bosch GmbH, Germany), Norbert Seliger (FH Rosenheim, Germany)
13:50 On-time Dependency on the Power Cycling Capability of Al Bond Wires Measured by Shear Test
Nan Jiang (Chemnitz University of Technology, Germany); Marko Kalajica (Heraeus Deutschland GmbH &Co. KG, Germany); Josef Lutz (Chemnitz University of Technology, Germany)
14:10 Power cycling reliability of time-reduced sintering for attaching SiC diodes using nanosilver film
Jingru Dai and Jianfeng Li (University of Nottingham, United Kingdom (Great Britain)); Pearl Agyakwa (Nottingham University, United Kingdom (Great Britain)); Christopher Johnson (University of Nottingham, United Kingdom (Great Britain))
14:30 Experimentally-Validated Models of On-State Voltage for Remaining Useful Life Estimation and Design for Reliability of Power Modules
Nicolas Degrenne and Stefan Mollov (Mitsubishi Electric R&D Centre Europe, France)
14:50 Interpretation of Power Cycling data derived from transient cooling curves
Martin Bayer, Samuel Hartmann, Marianne Berg, Robert Moody and Gontran Paques (ABB Switzerland Ltd., Switzerland)
15:10 Trends in SiC MOSFET Threshold Voltage and ON-Resistance Measurements from Thermal Cycling and Electrical Switching Stresses
Joseph Kozak (Virginia Tech, USA); Douglas DeVoto and Joshua Major (National Renewable Energy Laboratory, USA); Khai D.T. Ngo (Virginia Tech, USA)

S1.1: Components to be integrated (1/2)

to be continued
Room: Reithalle
13:50 Direct Pressed Die (DPD) Technology - a Novel Packaging Solution for Power Modules
Christian Goebl (Semikron Elektronik GmbH, Germany)
14:10 PCB-Embedding for GaN-on-Si Power Devices and ICs
Richard Reiner (IAF Fraunhofer, Germany); Beatrix Weiss, Dirk Meder and Patrick Waltereit (Fraunhofer IAF, Germany); Christian Vockenberger (AT&S Austria Technologie & Systemtechnik, Austria); Thomas Gerrer and Rüdiger Quay (Fraunhofer IAF, Germany); Oliver Ambacher (Fraunhofer IAF & IMTEK, University Freiburg, Germany)
14:30 The M-Shunt Structure Applied to Printed Circuit Boards
Christian Bödeker, Melanie Adelmund and Nando Kaminski (University of Bremen, Germany)
14:50 An Investigation of the Parasitic Impedance on the DC-Link Capacitor of EV Drive Inverters
Stefan Piepenbreier (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Albert Käß (Chair of Electrical Engineering, University of Erlangen-Nuremberg, Germany); Martin März (FhG Erlangen, Germany)
15:10 Volumetric Evaluation of Passive Components in Multilevel Three-Phase Active Front-End AC-DC Converters
Friedrich Schultheiß (BMW Group, Germany); Martin März (FhG Erlangen, Germany)

Wednesday, March 21, 15:30 - 16:00

Tea break

Rooms: 2nd lecture hall, Reithalle

Wednesday, March 21, 16:00 - 17:00

S6.1: EMI (Clean switching, electromagnetic compatibility (1/2)

Room: 2nd lecture hall
16:00 Characterization of ferrite core properties for FM-band filtering in automotive applications
Sven Bönisch (Brandenburg University of Technology, Germany); Stefan Hoffmann (Fraunhofer IZM, Germany); Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany); Michael Schmidhuber (Sumida Components GmbH, Germany)
16:20 Suppression of Electromagnetic Interference using Multi-Stage Inte-grated Filtering with Screening and Partitioning
Zhe Zhang (University of Nottingham & Power Electronics, Machines and Control Group, United Kingdom (Great Britain)); C Mark Johnson (University of Nottingham, United Kingdom (Great Britain))
16:40 Improving 9-150 kHz EMI Performance of Single-Phase PFC Rectifier
Pooya Davari (Aalborg University, Denmark); Eckart Hoene (Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM, Germany); Firuz Zare (University of Queensland, Australia); Frede Blaabjerg (Aalborg University, Denmark)
17:00 Advantages of Gallium Nitride over Silicon transistors in soft-switched resonant switched capacitor converters
Diego Serrano, Miroslav Vasic, Pedro Alou and Jesus Oliver (Universidad Politecnica de Madrid, Spain); Jose A. Cobos (Universidad Politécnica de Madrid (UPM), Spain)

Wednesday, March 21, 16:00 - 16:20

S.1.2: Components to be integrated (2/2)

Room: Reithalle
16:00 Double chips low side - high side configurable full gate driver circuits for a high speed inverter leg
Van Sang Nguyen (Grenoble Institute of Technology & G2ELab, France); Pierre Lefranc (University of Grenoble Alpes, France); Jean-Christophe Crebier (Grenoble Université, France)

Wednesday, March 21, 16:20 - 17:20

S3.1: Power packages and modules (1/2)

to be continued
Room: Reithalle
16:20 Fabrication and Characterization of a High-Power-Density, Planar 10 kV SiC MOSFET Power Module
Christina DiMarino (Virginia Tech & Center for Power Electronics Systems (CPES), USA); Christopher Johnson, Bassem Mouawad, Jianfeng Li and Robert Skuriat (University of Nottingham, United Kingdom (Great Britain)); Meiyu Wang and Yansong Tan (Tianjin University, P.R. China); Guo-Quan Lu (Virginia Tech & NBE Technologies, LLC, USA); Dushan Boroyevich and Rolando Burgos (Virginia Tech, USA)
16:40 A 3.3 kV SiC MOSFET Half-Bridge Power Module
Bassem Mouawad and Abdallah Hussein (University of Nottingham, United Kingdom (Great Britain)); Alberto Castellazzi (University of Nottingham & Power Electronics, Machines and Control Group, United Kingdom (Great Britain))
17:00 Towards Wafer Level 3D Power Integration
Dominique Bergogne (CEA Leti University of Grenoble, France); Jean Charbonnier and Venceslass Rat (CEA Leti, France)

Wednesday, March 21, 17:20 - 17:40

Break

Rooms: 2nd lecture hall, Reithalle

Wednesday, March 21, 17:40 - 19:00

S6.2: Clean switching, electromagnetic compatibility (2/2)

to be continued
Room: 2nd lecture hall
17:40 Design of a low inductive switching cell dedicated to SiC based CSI converter
Guillaume Lefèvre (CEA - INES)
18:00 Novel SiC Module Design - Optimised for Low Switching Losses, Efficient Cooling Path and Low Inductance
Thomas Huber and Alexander Kleimaier (University of Applied Sciences Landshut, Germany)
18:20 Switching characteristics of low inductance SiC module with integrated capacitors for aircraft applications
Bernardo Cougo, Hans Sathler and Raphael Riva (IRT Saint-Exupery, France)
18:40 Benefits of new CoolSiC™ MOSFET in HybridPACK™ Drive package for electrical drive train applications

S3.2: Power packages and modules (2/2)

Room: Reithalle
17:40 A transfer-molded high temperature SiC power module withstanding up to 250 °C
Kazuhiro Mitamura (Advanced Industrial Science And Technology (AIST) & Renesas Electronics Corporation, Japan); Yui Ozaki (Sumitomo Bakelite Co., Ltd., Japan); Yoshinori Murakami (National Institute of Advanced Industrial Science and Technology, Japan); Hiroki Takahashi (FUJI ELECTRIC CO., LTD., Japan); Hidekazu Tanisawa, Kenichi Koui, Fumiki Kato, Shinji Sato, Hiroshi Yamaguchi and Hiroshi Sato (National Institute of Advanced Industrial Science and Technology, Japan)
18:00 High Reliable Power Modules by Pressureless Sintering
Uwe Waltrich, Christoph Friedrich Bayer and Stephanie Zötl (Fraunhofer Institute for Integrated Systems and Device Technology, Germany); Sigrid Zischler (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Adam Tokarski (Fraunhofer Institute for Integrated Systems and Device Technology, Germany); Andreas Schletz (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany); Martin März (FhG Erlangen, Germany)
18:20 Pressureless Silver Nanopowder Sintered Bonds for Liquid Cooled IGBT Power Modules
Namjee Kim and Rophina Li (University of Toronto, Canada); Meinrad Machler, John Brugers and Sooky Winkler (Dana, Canada); Wai Tung Ng (University of Toronto, Canada)
18:40 Low Temperature Silver Sinterprocesses on (EN)EPEAg Surfaces for High Temperature SiC Power Modules
Thomas Blank, Bao Ngoc An, Benjamin Leyrer, Michael Bruns, Michael Meisser and Torsten Scherer (Karlsruhe Institute of Technology, Germany); Dai Isikawa (Karlsruhe Institute of Technology (KIT), Germany); Jessica Helber, Helge Wurst and Marc Weber (Karlsruhe Institute of Technology, Germany)

Wednesday, March 21, 19:30 - 22:00

Dinner

Rooms: 2nd lecture hall, Reithalle

Thursday, March 22

Thursday, March 22, 08:30 - 10:10

Mechatronic systems and their applications

Room: Reithalle
08:30 Google Little Box Reloaded
Johann. W. Kolar (ETH Zurich, Switzerland)
09:10 Little Box Winner Team
Paul Bleus (CET Power, Belgium)
09:40 Power conversion needs for high tech systems
Korneel Wijnands (Eindhoven University of Technology, The Netherlands)

Thursday, March 22, 10:10 - 10:40

Tea break

Rooms: 2nd lecture hall, Reithalle

Thursday, March 22, 10:40 - 12:10

Packaging (1)

Room: Reithalle
10:40 10 kV SiC power module packaging
C Mark Johnson (University of Nottingham, United Kingdom (Great Britain)); Christina DiMarino (Virginia Tech & Center for Power Electronics Systems (CPES), USA); Bassem Mouawad, Jianfeng Li and Robert Skuriat (University of Nottingham, United Kingdom (Great Britain)); Meiyu Wang and Yansong Tan (Tianjin University, P.R. China); Guo-Quan Lu (Virginia Tech & NBE Technologies, LLC, USA); Dushan Boroyevich and Rolando Burgos (Virginia Tech, USA)
11:10 Power Electronic Integration and packaging for aeronautic application in harsh environment
Regis Meuret (Safran Electrical & Power, France); Donatien Martineau and Toni Youssef (Safran, France); Christian Martin (Univ Lyon, UCB Lyon 1, CNRS, AMPERE, France); Ousseynou Yade (AMPERE, France)

Thursday, March 22, 12:10 - 13:40

Lunch break

Rooms: 2nd lecture hall, Reithalle

Thursday, March 22, 13:40 - 14:20

Packaging (2)

Room: Reithalle
13:40 Advanced Joining by Metal-powder Sintering: the Science, Practice, and Recent Development
Guo-Quan Lu (Virginia Tech & NBE Technologies, LLC, USA); Meiyu Wang, Yun-Hui Mei and Xin Li (Tianjin University, P.R. China)

Thursday, March 22, 14:20 - 14:30

Closing remarks

Room: Reithalle

Thursday, March 22, 14:30 - 14:45

Ceremony: CIPS Young Engineer Award , CIPS Best Poster Award

Room: Reithalle

Thursday, March 22, 14:45 - 15:15

Ceremony: Semikron Innovation and Young Engineer Award

Room: Reithalle